双折射吸收非线性介质薄膜中倍频的产生

从二次谐波电场满足的波动方程出发，考虑到介质对二次谐波的吸收以及把完全边界条件应用于基频波和二次谐波在介质的入射面和出射面之间的反射效应，推导出了单光轴非线性薄膜介质中的二次谐波输出功率的计算式.结果表明：当采用复折射率的概念时，可以把非线性无吸收介质的二次谐波输出功率计算式应用到非线性吸收介质二次谐波输出功率计算式中去.     

Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.     

消费者连续统集合下一种投入产出经济的均衡和一般均衡价格

本给出了一个经济模型把跨期间的一般均衡理论和neo-Ricardian的生产价格理论联系起来，并改进了Roce-Anne Oana模型[1][2]。即把消费有限改变消费连续统，并在Rose-Anne Dana模型的基础上，加了条件C.4和C.7，得出了两个重要的结果：（1）在标准条件下，此模型有一均衡使得每一个生产的每期最大利润是相等的；（2）如考虑生产价格是稳定价格；且等于最大利润；则在适当的条件下，这样的价格系统是存在且唯一的，而所定义的均衡的非折扣的价格序列收敛于生产价格。因此均衡价格依赖于技术和消费特征，但在取极限时，有关价格仅依赖于技术。     

立方非线性产品包装损坏边界的三维曲面表示

用三次Ｂ样条函数配点法，求得在矩形波冲击下具有立方非线性产品包装的冲击谱。讨论了软、硬非线性及外界激励幅值对产品损坏边界的影响。提出用损坏边界曲面来描述非线性产品包装的安全区域，并作出了相应的损坏边界曲面．     

跳跃非线性项依赖于导数的二阶微分方程周期解的存在性

本文研究二阶微分方程χ"+aχ+-bχ-+f(χ)g(χ'=p(t)周期解的存在性,这里χ+=max{χ,0},χ-=max{-χ,0},a,6是正常数并且点(a,b)位于某一条Fucik谱曲线上.当g(χ)的极限lim.g(χ)=g(+∞),lim g(χ)=g(-∞)和f(χ)的极限lim,g(χ)=f(+∞),lim f(χ)=f(-∞)都存在且有限时,给出了此方程存在周期解的充分条件.     

Nonlinear Optical Processes in Doped Semiconductor Superlattices

For doped semiconductor superlattices we have analyzed the effects of absorption saturation and change in the refractive index depending on the level of their excitation and structure parameters. The calculations were carried out with account for the tails of the density of states and screening of the electrostatic potential. It is shown that doped superlattices may display shading, i.e., the increase in the absorption coefficient at a fixed frequency with increase in light intensity. For –doped superlattices a stronger nonmonotonicity of the change in the refractive index with increase in the excitation level in comparison with typical structures can manifest itself.     

Mechanism Study for Thermal/Electric Field Poling of Fused Silica

On the basis of the experimental reports, the mechanism of the second-order susceptibility ⁽²⁾ for the thermal/electric field poling of fused silica is analyzed, and expressions for ⁽²⁾ are detailedly derived and numerically calculated for the first time. By comparison the theoretical value of ⁽²⁾ with the experiment results, we propose that the effective ⁽²⁾ is created via both the interaction of the intense electric field with the third-order susceptibility ⁽³⁾ and the dipole orientation. The theoretical results show that, in the differently applied voltage, the dipole orientation and ⁽³⁾ play different role in the formation of ⁽²⁾. This theory successfully explains some experiment results.     

测三极管特性的改进电路

指出了电子线路基础实验教材中所给出的测三极管特性的电路所存在的问题,提出了合理的电路.     

Large near resonance third order nonlinearity in GaN

We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n ₂, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n ₂ and . The distribution of n ₂ versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n ₂ with a magnitude on the order of several 10^–12 cm²/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.