并行FORTRAN程序设计技术探索

简要叙述了并行程序设计语言ＣＭＦｏｒｔｒａｎ的计算模式、并行数据结构及其主要特征．并对Ｆｏｒｔｒａｎ７７和Ｆｏｒｔｒａｎ９０上的扩展部分作了概要描述．     

Quenching of thermo-stimulated photo-ionization by energy transfer in CaAl4O7: Tb, Ce

Crystal fibers of Ce³⁺ and Tb³⁺ singly doped and co-doped CaAl₄O₇ were grown by the LHPG method. Photoluminescence, excitation spectra and photoconduction were measured. Thermo-stimulated photo-ionization (delocalization) of electrons from the lowest field component of the 5d excited state of Ce³⁺ was observed in the Ce³⁺ singly doped sample under excitation at 355 nm. The 5d sublevel was found to locate at 0.3 eV below the conduction band of the host. However, the thermo-stimulated photo-ionization was greatly quenched due to the fast energy transfer from the 5d sublevel to Tb³⁺ ions in the Ce³⁺/Tb³⁺ double doped sample.     

Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films

In this study, silicon nanocrystal-rich Al₂O₃ film has been prepared by co-sputtering a silicon and alumina composite target and subsequent annealing in N₂ atmosphere. The microstructure of the film has been characterized by infrared (IR) absorption, Raman spectra and UV-absorption spectra. Typical nanocrystal and interface defects related photoluminescence with the photon energy of 1.54 (IR band) and 1.69 eV (R band) has been observed by PL spectrum analysis. A post-annealing process in oxygen atmosphere has been carried out to clarify the emission mechanism. Despite the red shift of the spectra, enhanced emission of the 1.69 eV band together with the weak emission phenomenon of the 1.54 eV band has been found after the post-annealing. The R band is discussed to originate from silicon nanocrystal interface defects. The IR band is concluded to be a coupling effect between electronic and vibrational emissions.     

组合几何蒙特卡罗粒子输运支撑软件框架JCOGIN介绍

介绍了JCOGIN支撑软件框架层次式、模块化的体系结构及其核心数据结构。这些使得JCOGIN软件框架能够支撑大规模复杂几何的蒙特卡罗（MC）粒子输运并行计算。同时介绍了在JCOGIN支撑软件框架下研发的JMCT程序,并进行了性能测试,在2万处理器核上模拟20亿粒子,并行效率达到70%。     

Preparation and characterisation of Au(1 1 0) and Cu(1 1 0) surfaces for applications in ambient environments

The preparation of metal surfaces that in ambient conditions are flat and smooth over micron length scales is desirable for a wide range of applications. Scanning probe microscopy (SPM) studies of biomolecular adsorption and cell attachment require such well-prepared substrates. Standard polishing finishes are often found to exhibit considerable roughness and damage including scratches when investigated by SPM. We have prepared by means of UHV technology Au(1 1 0) and Cu(1 1 0) surfaces that when in ambient air exhibit a more homogeneous morphology and are considerably smoother than conventional polished surfaces. SPM techniques and the optical technique of reflection anisotropy spectroscopy (RAS) are used to characterise the morphological and electronic properties of these surfaces, respectively. The RA response of both Au(1 1 0) and Cu(1 1 0) surfaces in ambient conditions can be interpreted in terms of optical transitions between surface-modified bulk bands.     

Parallel numerical simulations for quantized vortices in Bose--Einstein condensates

We employ the parallel computing technology to study numerically the three-dimensional structure of quantized vortices of Bose--Einstein condensates. For anisotropic cases, the bending process of vortices is described in detail by the decrease of Gross--Pitaevskii energy. A completely straight vortex and the steady and symmetrical multiple-vortex configurations are obtained. We analyse the effect of initial conditions and angular velocity on the number and shape of vortices.     

A flower-like Ising model. Thermodynamic properties

We consider a flower-like Ising model, in which there are some additional bonds (in the “flower-core”) compared to a pure Ising chain. To understand the behaviour of this system and particularly the competition between ferromagnetic (usual) bonds along the chain and antiferromagnetic (additional) bonds across the chain, we study analytically and iteratively the main thermodynamic quantities. Very interesting is, in the zero-field and zero-temperature limit, the behaviour of the magnetization and the susceptibility, closely related to the ground state configurations and their degeneracies. This degeneracy explains the existence of non-zero entropy at zero temperature, in our results. Also, this model could be useful for the experimental investigations in studying the saturation curves for the enzyme kinetics or the melting curves for DNA-denaturation in some flower-like configurations.     

Theoretical investigation of the conduction and valence band offsets of GaAs1−x Nx/GaAs1−yNy heterointerfaces

Theoretical investigations of the conduction band offset (CBO) and valence band offset (VBO) of the relaxed and pseudo-morphically strained GaAs_1−xN_x/GaAs_1−yN_y heterointerfaces at various nitrogen concentrations (x and y) within the range 0-0.05 and along the [0 0 1] direction are performed by means of the model-solid theory combined with the empirical pseudopotential method under the virtual crystal approximation that takes into account the effects of the compositional disorder. It has been found that for y < x, the CBO and VBO have negative and positive signs, respectively, whereas the reverse is seen when y > x. The band gap of the GaAs_1−xN_x over layer falls completely inside the band gap of the substrate GaAs_1−yN_y and thus the alignment is of type I (straddling) for y < x. When y > x, the alignment remains of type I but in this case it is the band gap of the substrate GaAs_1−yN_y which is fully inside the band gap of the GaAs_1−xN_x over layer. Besides the CBO, the VBO and the relaxed/strained band gap of two particular cases: GaAs_1−xN_x/GaAs and GaAs_1−xN_x/GaAs_0.98N_0.02 heterointerfaces have been determined.     

The absorption spectrum of phosphine (PH3) between 2.8 and 3.7 μm: Line positions, intensities, and assignments

Over 8000 line positions and intensities of phosphine (PH₃) at 3 μm have been measured at 0.0115 cm⁻¹ resolution with the McMath-Pierce Fourier Transform spectrometer at Kitt Peak. The observed line intensities ranged from 4.13 × 10⁻⁶ to 4.69 × 10⁻² cm⁻² atm⁻¹ at 296 K, for line positions between 2724.477 and 3601.652 cm⁻¹. This region spans eight interacting vibrational states: 3ν₂ (2940.8 cm⁻¹), 2ν₂ + ν₄ (3085.6 cm⁻¹), ν₂ + 2ν₄ (3214.9 cm⁻¹), ν₁ + ν₂ (3307.6 cm⁻¹), ν₂ + ν₃ (3310.5 cm⁻¹), 3ν₄ (∼3345 cm⁻¹), ν₁ + ν₄ (3426.9 cm⁻¹), and ν₃ + ν₄ (3432.9 cm⁻¹). Assignments have been determined for all the bands except 3ν₄ (a weak band in a highly congested area) for a total of 4232 transitions. The total integrated intensity for this region is 5.70 cm⁻² atm⁻¹ near 296 K, and assigned lines account for 79% of the observed absorption. The two strongest bands in the region are ν₁ + ν₄ and ν₃ + ν₄ with band strengths at 296 K of 1.61 and 2.01 cm⁻² atm⁻¹, respectively. An empirical database of PH₃ line parameters (positions, intensities, and assignments) is now available. Lower state energies (corresponding to assignments from this study) and line widths from the literature are included; default values are used for unassigned features.     

Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism

Polycrystalline Sn_1−xMn_xO₂ (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.