Mobility edges and reentrant localization in one-dimensional dimerized non-Hermitian quasiperiodic lattice

The mobility edges and reentrant localization transitions are studied in one-dimensional dimerized lattice with nonHermitian either uniform or staggered quasiperiodic potentials.We find that the non-Hermitian uniform quasiperiodic disorder can induce an intermediate phase where the extended states coexist with the localized ones,which implies that the system has mobility edges.The localization transition is accompanied by the PT symmetry breaking transition.While if the non-Hermitian quasiperiodic disorder is staggered,we demonstrate the existence of multiple intermediate phases and multiple reentrant localization transitions based on the finite size scaling analysis.Interestingly,some already localized states will become extended states and can also be localized again for certain non-Hermitian parameters.The reentrant localization transitions are associated with the intermediate phases hosting mobility edges.Besides,we also find that the non-Hermiticity can break the reentrant localization transition where only one intermediate phase survives.More detailed information about the mobility edges and reentrant localization transitions are presented by analyzing the eigenenergy spectrum,inverse participation ratio,and normalized participation ratio.     

界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响

针对界面态密度在禁带中的不均匀分布，分析了界面态电荷对n沟6H碳化硅MOSFET场效应迁移率的影响.分析结果显示，界面态电荷使n沟碳化硅器件的场效应迁移率明显降低.并给出了实验测定的场效应迁移率和反型层载流子迁移率的比值与界面态密度之间关系. 关键词： 碳化硅 界面态 反型层迁移率 场效应迁移率     

Symmetrical broken and nonlinear response of Weyl semimetal TaAs influenced by the topological surface states and Weyl nodes

A Weyl semimetal (WSM) features Weyl fermions in its bulk and topological surface states on surfaces, and is novel material hosting Weyl fermions, a kind of fundamental particles. The WSM was regarded as a three‐dimensional version of “graphene” under the illusion. In order to explore its promising photoelectric properties and applications in photonics and photoelectronics, here, we study the anisotropic linear and nonlinear optical responses of a WSM TaAs, which are determined by the relationship and balance between its topological surface states and Weyl nodes. We demonstrate that topological surface states which break the bulk symmetry are responsible for the anisotropy of the mobility, and the anisotropic nonlinear response shows saturable characteristic with extremely large saturable intensity. We also find that the mobility is anisotropic with the magnitude of 10⁴ cm²V⁻¹s⁻¹ at room temperature and can be accelerated by the optical field. By analyzing the symmetry, the nonlinear response is mainly contributed by the fermions close to the Weyl nodes, and is related to the Pauli's blocking of fermions, electron‐electron interaction. This work experimentally discovers the anisotropic ultrahigh mobility of WSMs in the optical field and may start the field for the applications of WSMs in photonics and photoelectronics.

     

Epidemic spreading in complex networks

The study of epidemic spreading in complex networks is currently a hot topic and a large body of results have been achieved. In this paper, we briefly review our contributions to this field, which includes the underlying mechanism of rumor propagation, the epidemic spreading in community networks, the influence of varying topology, and the influence of mobility of agents. Also, some future directions are pointed out.      

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.     

Active electric near field imaging of electronic devices

An active two dimensional near field imaging of a High Electron Mobility Transistor (HEMT) used as THz detector has been performed. The reflective imaging system developed at the ENEA FEL Facility in Frascati has been used to this purpose. This imaging technique has shown to be particularly powerful in resolving various coupling mechanisms of the incident radiation with the device.     

Perspective methods of human identification: Ear biometrics

Geometrical methods of feature extraction from ear images in order to perform human identification are presented. Geometrical approach is motivated by the actual procedures used by police and forensic experts (so-called ear otoscopy). In their work, geometrical features of ears such as size, height, width, and shapes of earlobe are useful and valid proofs of identity. The contribution of the article is development of the new and original methods of geometrical feature extraction from 2D ear images. Four novel algorithms of ear feature extraction from contour images are described in detail. Moreover, identification results obtained for each of the methods, based on the distance of feature vectors in the feature space, are presented.     

Ⅲ族氮化物异质结构二维电子气研究进展

本文总结了近年来Ⅲ族氮化物半导体异质结构二维电子气的研究进展。从Ⅲ族氮化物材料晶格结构和特有的极化性质出发,重点讨论了AlGaN/GaN异质结构中二维电子气的性质,总结分析了异质结构中Al组分、势垒层厚度、应变弛豫度、掺杂等对二维电子气浓度和迁移率的影响,同时还涉及AlGaN/GaN/AlGaN,AlGaN/AlN/GaN和AlGaN/InGaN/GaN等异质结构二维电子气性质。     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

Screening and interlayer coupling in multilayer MoS2

The two‐dimensional layered semiconducting di‐chalcogenides are emerging as promising candidates for post‐Si‐CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back‐gated multilayer MoS₂ field‐effect transistors. We observe a non‐monotonic trend in the extracted effective field‐effect mobility with layer thickness which is of relevance for the design of high‐performance devices. We also discuss a detailed theoretical model based on Thomas–Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two‐dimensional layered system.