Recent Advances on Bismuth-based 2223 and 2212 Superconductors: Synthesis,Chemical Properties,and Principal Applications

This article is focused on principal Bi-containing superconductors. Recent results obtained on Bi-2212, Bi-2223, and related composite materials are discussed. Special attention is paid to various advanced methods of synthesis. Optimization of the superconducting properties by the chemical modifications is considered in terms of most important practical applications.     

Growth,structural, spectral,optical and electrical properties of 2-aminophenol single crystals

Good quality single crystals of 2-aminophenol were grown by slow evaporation solution growth technique at room temperature. Crystal structure and crystalline nature was determined by X-ray diffraction studies. Prescence of functional groups in the crystal was confirmed by FT-IR analysis. UV transmittance study shows the large transmittance in the entire visible region. Dielectric constant and loss for the crystals were taken at different tempeature. Photoconductivity study exhibits positive nature of the grown crytal. DC conductivity studies were also carried out for the grown crystal.     

Growth,structure and physical properties of gadolinium doped Sr2IrO4 single crystal

A series of Gd-doped Sr₂IrO₄ single crystals were grown using a flux method. Analysis of the temperature-dependent resistance of these crystals reveals that these samples show two-dimensional weak localization at 150 to 300 K, while three-dimensional variable range hopping (VRH) behavior is observed at temperatures lower than 150 K. Two localization lengths are observed in the VRH behavior, with a transition temperature of around 88 K. Correspondingly, temperature-dependent magnetization observations along the ab-plane reveal magnetic anomalies at both 150 and 85 K. This work demonstrates the correlation between the electrical and magnetic properties of 5d transition-metal compounds.     

Resistivity distribution of silicon single crystals using codoping

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B–P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.     

Czochralski法生长Lu2SiO5：Ce晶体的发光特性

本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达5 0mm× 6 0mm的Lu2 SiO5:Ce晶体。XRD结构分析表明 ,该晶体为单斜结构。在室温下分别以X射线和紫外光为激发源测量了该晶体的发射光谱 ,获得的发射波长分别为 4 0 3nm和 4 2 0nm ,光衰减时间为 4 1ns,光产额达 32 0 0 0p/MeV。发射光谱的双峰结构以及晶体的发光特性证明其发光源于Ce3 离子的 5d1→5F5/ 2 和 5d1→5F7/ 2 跃迁。     

Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon

Strong red photoluminescence (PL) spectra appeared at porous silicon (PS) samples prepared by a chemical anodization of Fe-contaminated Si substrates. The Fe1000 sample with Fe contamination of 1000 ppb showed a ten times stronger red PL than that of the reference PS sample without any Fe contamination, and this sample also showed the higher thermal stability for PL spectra as compared with the reference PS sample. Furthermore, the PL intensity from the PS with Fe contamination is linearly proportional to the Fe-related trap concentrations of Si substrates obtained from DLTS. Especially, all the PS samples exhibit the same PL peak position regardless of Fe contamination concentrations, as compared with that of the reference PS. This means that there is no significant effect such as the variation of size distribution of nanocrystalline Si in PS layer formed on Fe-contaminated Si substrate. Based on the results of PL and DLTS, we found that the PL efficiency depends strongly on the Fe-related trap concentration in Si substrates.     

Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals

Morphological, surface and crystallographic analyses of titanosilicate ETS-4 products, with diverse habits ranging from spherulitic particles composed of submicron crystallites to large single crystals, are presented. Pole figures revealed that crystal surfaces with a-, b- and c- axes corresponded to 110, 010 and 001 directions, respectively. Thus, technologically important 8-membered ring pores and titania chains in ETS-4 run along the b-axis of single crystals and terminate at the smallest crystal face. Height of the spiral growth steps observed on 1 0 0 and 0 0 1 surfaces corresponded to the interplanar spacings associated with their crystallographic orientation, and is equivalent to the thickness of building units that form the ETS-4 framework. Data suggest that the more viscous synthesis mixtures, with a large driving force for growth, increased the two- and three-dimensional nucleation, while limiting the transport of nutrients to the growth surface. These conditions increase the tendency for stacking fault formation on 1 0 0 surfaces and small angle branching, which eventually results in spherulitic growth. The growth of high quality ETS-4 single crystals (from less viscous synthesis mixtures) occurred at lower surface nucleation rates. Data suggest that these high quality, large crystals grew due to one-dimensional nucleation at spiral hillocks, and indicate that under these conditions un-faulted growth is preferred.     

二次生长法NaA沸石分子筛膜的合成与表征——推荐一个研究型综合实验

介绍一个研究型综合实验——二次生长法NaA沸石分子筛膜的合成与表征。实验预先利用热浸渍法在α-Al_2O_3多孔载体管外表面引入NaA沸石分子筛晶种,再通过二次生长法合成NaA沸石分子筛膜。用扫描电子显微镜和X射线衍射仪表征载体管和NaA沸石分子筛及膜的形貌和结构,并利用渗透蒸发乙醇脱水膜分离装置测试膜的分离性能。通过本实验使学生了解膜分离技术这一科学前沿领域,激发学生对科学研究的兴趣,培养学生的科研探究能力。本实验涵盖合成、表征及性能测试,知识要点多、学科覆盖面广,有利于提升学生的实践操作能力、创新意识和综合运用知识的能力。     

碳模板诱导生长Fe-Nx活性位点

能源危机和环境恶化是当今社会面临的巨大挑战. 燃料电池作为一种高效、清洁的发电装置,受到了社会各界特别是新能源行业的高度关注. 尤其是, 日本丰田推出Mirai燃料电池汽车量产上市计划, 把燃料电池及其关键技术发展推向了一个新的发展纪元. 然而, 制约燃料电池走向大规模商业化的核心问题依然是其综合性能不具竞争力. 其中, 氧电极的缓慢动力学以及贵金属Pt的有限资源、高昂成本等是关键所在, 因此, 亟待实现高性能非贵金属催化剂的突破.近年来, 大量研究表明, Fe-Nx掺杂的碳催化剂具有极大的代Pt潜力, 研究者们尝试各种手段进行开发,如: 调控Fe化合物及N前驱体的类型与添加量, 改变温度、压力等合成条件, 采用轴向配位体连接、共价接枝、球磨等非热解路线, 构建核壳、有序介孔碳、阵列、类石墨烯薄片、多孔碳等碳纳米结构, 制备石墨烯/碳纳米管、石墨烯/碳黑、碳纳米带/碳纳米管、碳纳米颗粒/碳纤维、碳球/碳纳米管/石墨烯等复合材料, 进行酸洗、造孔、二次加热等后处理, 调控不同类型Fe物种相生成等. 此外, EXAFS及M?ssbauer等谱学技术已经证实Fe-Nx特别是Fe-N4为强活性位点. 因此, 有待提出合理策略以促进非贵金属碳催化剂中Fe-Nx强活性位点的高密度掺杂.本文提出了一种碳模板诱导Fe-Nx活性位点生长的方法即通过高温热解含有Fe盐的三聚氰胺前驱体混合物, 成功制备 了Fe-Nx掺杂的碳催化剂, 并结合多种表征技术证实了碳模板对制备碳催化剂结构组成及电化学性能的影响. 形貌结果说明, 碳模板的引入有利于Fe、N化合物的均匀吸附以至于Fe基纳米颗粒的均一成核, 促使竹状碳纳米管在碳模板表面以及中间均一生长; 氮气吸脱附及孔径分布曲线显示, 引入碳模板形成的复合材料较单一的碳纳米管和碳黑材料具有提高的比表面积和总孔体积, 说明复合材料中存在两种单体的有效协同; M?ssbauer、XPS及XRD测试数据证实, 碳模板可以调控Fe、N两种元素的耦合方式, 能够抑制金属Fe和Fe碳化物等非活性Fe物种的生成、诱导Fe-N4和其它Fe氮化物等强活性Fe-Nx物种的生长. 电化学测试数据表明, 复合材料具有提升的面积活性和质量活性, 且TOF值明显提高, 说明碳模板的引入增强了Fe-Nx位点的本征活性; 此外, 复合材料的氧还原过程为高效的4e-途径, 且较商业Pt/C催化剂表现出了优异的循环稳定性和甲醇耐受性.