Silicon etching in Cl2 environment

The ion-beam-assisted etching of silicon in Cl₂ environment is considered. The theoretically calculated dependences of silicon etching rate on the flux of Cl₂ molecules at different ion current densities are compared with experimentally measured. The composition of the adsorbed layer is determined. It is found that SiCl₂ molecules prevail in the adsorbed layer. The reciprocal of relative concentration of SiCl₂ molecules in the adsorbed layer linearly depends on the ion-to-neutral flux ratio.     

The effect of surface crystalline layers on asymmetric off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons

The off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons was measured using a pick-up coil wound around the sample. One side of a ribbon was etched in hydrofluoric acid solution during various times in order to change the thickness of the surface crystalline layer appearing after annealing. The asymmetric two-peak field dependence of the off-diagonal impedance was observed for all samples. The evolution of the off-diagonal magnetoimpedance with the change in the ribbon thickness is analyzed.     

External influence on magnetic properties of Fe-based nanocrystalline alloys

Amorphous and nanocrystalline ribbons of NANOPERM, FINEMET and HITPERM were studied by Mössbauer spectroscopy (MS) after the influence of external factors: different annealing atmospheres, tensile stress and several kinds of corrosion. MS is a suitable tool for such studies because the spectral parameters are very sensitive to changes in the vicinity of the probe — ⁵⁷Fe nuclei. The most sensitive parameters were hyperfine magnetic field in crystalline component, average hyperfine field in amorphous component and direction of net magnetic moments. Influence of external factors modified also the structure of the alloys, i.e. new or modified phases were identified by MS phase analysis.     

The evolution of magnetic,electrical and structural properties of nanogranular [FeCoBN/SiN]×n thin films

Some results concerning the magnetic, electrical and microstructural properties of multilayer [FeCoBN/Si₃N₄]×n films in view of their utilization for manufacturing thin film magnetic inductors are presented. A comparison between the magnetic, electrical and structural properties of FeCoBN and [FeCoBN/Si₃N₄]×n thin films is also reported. The [FeCoBN/Si₃N₄]×n thin films with the thickness of the FeCoBN layers varied from 10 to 30 nm, exhibit good soft magnetic characteristics and high values for electrical resistivity such as Ms of 172–185 A m²/kg, Hc of 318–1433 A/m and ρ of 82–48×10⁻⁷ Ω m, respectively. These physical properties of the samples are discussed in relation with the microstructure of the multilayer system.     

Thickness influence on surface morphology and ozone sensing properties of nanostructured ZnO transparent thin films grown by PLD

Transparent zinc oxide (ZnO) thin films with a thickness from 10 to 200 nm were prepared by the PLD technique onto silicon and Corning glass substrates at 350 °C, using an Excimer Laser XeCl (308 nm). Surface investigations carried out by atomic force microscopy (AFM) and X-ray diffraction (XRD) revealed a strong influence of thickness on film surface topography. Film roughness (RMS), grain shape and dimensions correlate with film thickness. For the 200 nm thick film, the RMS shows a maximum (13.9 nm) due to the presence of hexagonal shaped nanorods on the surface. XRD measurements proved that the films grown by PLD are c-axis textured. It was demonstrated that the gas sensing characteristics of ZnO films are strongly influenced and may be enhanced significantly by the control of film deposition parameters and surface characteristics, i.e. thickness and RMS, grain shape and dimension.     

Modulation of Spin Distribution and Spin Transport by a Magnetic Field in a Quasi-One-Dimensional System with Spin--Orbit Coupling

The distributions of spin and currents modulated by magnetic field in a transverse parabolic confined two-dimensional electronic system with a Rashba spin--orbit coupling have been studied numerically. It is shown that the spin accumulation and the spin related current are generated by magnetic field if the spin--orbit coupling is presented. The distributions of charge and spin currents are antisymmetrical along the cross-section of confined system. A transversely applied electric field does not influence the characteristic behaviour of charge- and spin-dependent properties.     

聚变等离子体中的快离子压强

本文运用Fokker-Planck方程的慢化近似,考虑存在多种离子成份(包括杂质),假定它们具有共同的温度,我们得到了聚变产生的快离子压强的简单封闭形式表示式。表明在典型的工作温度下(～60keV),D-~3He等离子体中聚变产生的快离子压强约为本底热压强的20％,这与D-T等离子体工作在20keV时的比值几乎相同。因此,D-~3He和D-T在它们相应的预期工作温度下,它们各自的快离子压强对总压强的影响是类似的,然而在更高的温度下,这个比值将变得更大。     

Domain morphology in ultrathin ferromagnetic films with perpendicular magnetization

We determine the minimal domain structure for the equilibrium thickness of stripes as well as for the minimal energy of the domain configuration in ultrathin films of ferromagnetically coupled spins, where the easy direction of magnetization is perpendicular to the film. It is found that the equilibrium thickness of stripes and walls depend on the exchange energy. The normalized anisotropy, f, depends on interplay between the magnetic and anisotropy energies and is almost independent of the exchange energy inside the wall. The results are compared with the experimental data for thin Ag/Fe/Ag (0 0 1) films and a good coincidence is obtained between both results.     

Effects of SnO2 addition on the magnetic properties of manganese zinc ferrites

SnO₂ was added to high-permeability MnZn ferrites and MnZn ferrites for high-frequency power supplies. The effects of the SnO₂ addition were studied. Sn⁴⁺ ions can dissolve into the spinel lattice and form stable Fe²⁺–Sn⁴⁺ pairs and hence can compensate the magneto-crystalline anisotropy constant K₁ and improve the initial permeability effectively. The initial permeability of ferrites is also improved as abnormal grain growth caused by ion vacancy is controlled with SnO₂ doping. In addition, the SnO₂ doping also leads to a decrease in the relative loss factor and an increase in density. The power loss and minimum power loss temperature decrease with SnO₂ doping.