Automatic 3D tracking of cardiac material markers using slice-following and harmonic-phase MRI

A method to track a grid of cardiac material points in three dimensions using slice-following (SF) tagged magnetic resonance imaging (MRI) and harmonic-phase MRI is presented. A three-dimensional grid of material points on the lines of intersections of short-axis (SA) and long-axis (LA) planes is automatically tracked by combining two-dimensional pathlines that are computed on both SA and LA image planes. This process yields the true three-dimensional motion of points originating on the image plane intersections. Experimental data from normal volunteers, each obtained in four short breath-holds using the SF harmonic phase MRI pulse sequence, is presented. A validation of two-dimensional in-plane tracks using this pulse sequence on a moving phantom is also presented.     

Upgrade of beamline BL08B at Taiwan Light Source from a photon‐BPM to a double‐grating SGM beamline

During the last 20 years, beamline BL08B has been upgraded step by step from a photon beam‐position monitor (BPM) to a testing beamline and a single‐grating beamline that enables experiments to record X‐ray photo‐emission spectra (XPS) and X‐ray absorption spectra (XAS) for research in solar physics, organic semiconductor materials and spinel oxides, with soft X‐ray photon energies in the range 300–1000 eV. Demands for photon energy to extend to the extreme ultraviolet region for applications in nano‐fabrication and topological thin films are increasing. The basic spherical‐grating monochromator beamline was again upgraded by adding a second grating that delivers photons of energy from 80 to 420 eV. Four end‐stations were designed for experiments with XPS, XAS, interstellar photoprocess systems (IPS) and extreme‐ultraviolet lithography (EUVL) in the scheduled beam time. The data from these experiments show a large count rate in core levels probed and excellent statistics on background normalization in the L‐edge adsorption spectrum.     

Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.     

纯电动汽车磷酸铁锂电池组的建模及优化

鉴于传统神经网络和支持向量机机理复杂、计算量大的缺陷,很难实时跟踪磷酸铁锂电池组复杂快速的内部反应,影响电池荷电状态的估算精度,提出应用一种简单、有效的极限学习机对一额定容量为100Ah、额定电压为72V的纯电动汽车磷酸铁锂电池组建模,并分别与BP神经网络、RBF神经网络、支持向量机进行对比。随后,以学习时间和泛化性能为优化目标,应用粒子群方法寻找最佳隐层节点个数。结果表明,基于极限学习机的磷酸铁锂电池组模型的学习时间、泛化性能优于BP神经网络、RBF神经网络、支持向量机;隐层节点优化后,模型的学习时间和泛化性能达到最优。     

糖厂澄清工段生产指标建模及操作参数优化

针对亚法糖厂澄清工段清汁色值和清汁残硫量难以在线测量的问题,提出了一种基于人工蜂群优化的在线极限学习机软测量方法。先用核主元分析法确定影响清汁质量的关键参数,建立基于在线极限学习机的软测量模型。同时利用人工蜂群算法对在线极限学习机的隐层参数进行寻优,优化所建模型。最后,使用带约束的粒子群对软测量模型进行优化求解,得到典型工况下的最优操作设定值,为后续工况操作提供参考依据。仿真结果表明,基于人工蜂群优化的在线极限学习机模型能够准确地预测清汁色值和残硫量,同时基于此模型优化的操作参数设定值能够达到期望的指标。     

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

For self-interstitial atom (SIA) clusters in various concentrated alloys, one-dimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and short-term electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.     

Shape memory behavior in Fe3Al-modeling and experiments

The Fe₃Al alloy with D0₃ structure exhibits large recoverable strains due to reversible slips. Tension and compression experiments were conducted on single crystals of Fe₃Al, and the onset of slip in forward and reverse directions were obtained utilizing high-resolution digital image correlation technique. The back stress provides the driving force for reversal of deformation upon unloading, resulting in a superelastic phenomenon as in shape memory alloys. Using density functional theory simulations, we obtain the energy barriers (GSFE – generalized stacking fault energy) for {1?1?0}〈1?1?1〉 and {1?1?2}〈1?1?1〉 slips in D0₃ Fe₃Al and the elastic moduli tensor, and undertake anisotropic continuum calculations to obtain the back stress and the frictional stress responsible for reversible slip. We compare the theoretically obtained slip stress magnitudes (friction and back stress) with the experimental measurements disclosing excellent agreement.     

New Concepts for Designing d10‐M(L)n Catalysts: d Regime,s Regime and Intrinsic Bite‐Angle Flexibility

Our aim is to understand the electronic and steric factors that determine the activity and selectivity of transition‐metal catalysts for cross‐coupling reactions. To this end, we have used the activation strain model to quantum‐chemically analyze the activity of catalyst complexes d¹⁰‐M(L)_n toward methane C?H oxidative addition. We studied the effect of varying the metal center M along the nine d¹⁰ metal centers of Groups 9, 10, and 11 (M=Co^?, Rh^?, Ir^?, Ni, Pd, Pt, Cu⁺, Ag⁺, Au⁺), and, for completeness, included variation from uncoordinated to mono‐ to bisligated systems (n=0, 1, 2), for the ligands L=NH₃, PH₃, and CO. Three concepts emerge from our activation strain analyses: 1) bite‐angle flexibility, 2) d‐regime catalysts, and 3) s‐regime catalysts. These concepts reveal new ways of tuning a catalyst’s activity. Interestingly, the flexibility of a catalyst complex, that is, its ability to adopt a bent L‐M‐L geometry, is shown to be decisive for its activity, not the bite angle as such. Furthermore, the effect of ligands on the catalyst’s activity is totally different, sometimes even opposite, depending on the electronic regime (d or s) of the d¹⁰‐M(L)_n complex. Our findings therefore constitute new tools for a more rational design of catalysts.     

Interfacial Strain Release from the WS2/CsPbBr3 van der Waals Heterostructure for 1.7 V Voltage All-Inorganic Perovskite Solar Cells

Perovskite lattice distortion induced by residual tensile strain from the thermal expansion mismatch between the electron-transporting layer (ETL) and perovskite film causes a sluggish charge extraction and transfer dynamics in all-inorganic CsPbBr₃ perovskite solar cells (PSCs) because of their higher crystallization temperatures and thermal expansion coefficients. Herein, the interfacial strain is released by fabricating a WS₂/CsPbBr₃ van der Waals heterostructure owing to their matched crystal lattice structure and the atomically smooth dangling bond-free surface to act as a lubricant between ETL and CsPbBr₃ perovskite. Arising from the strain-released interface and condensed perovskite lattice, the best device achieves an efficiency of 10.65 % with an ultrahigh open-circuit voltage of 1.70 V and significantly improved stability under persistent light irradiation and humidity (80 %) attack over 120 days.