一类非线性常微分方程振荡解的渐近表示

在本文中,我们讨论了非线性常微分方程y"=a0|x|αy3 a1|x|βy2 α2|x|γy α3|x|δ振荡解的渐近表示．在这个方程中将α0,α,α1,β,α2,γ,α3,δ分别换成0,0,6,0,0,0,sgn(x),1就是著名的第一类Painleve方程,而将α0,α,α1,β,α2,γ,α3,δ分别换成2,0,0,0,sgn(x),1,α0,就是著名的第二类Painleve方程．当α0,α,α1,β,α2,γ,α3,δ分别换成-β/3γ,0,0,0,1/γ,1,α,0时,可用于组合KdV方程孤立子解的化简．     

刚性方程组M~.(t)+C~.X(t)+KX(t)=F(t)解的探讨

讨论了刚性常微分方程组(1)的解析解和数值解,给出了解的一般形式和应用该算法的数值例子.     

一类脉冲中立型时滞抛物方程组的振动性

研究一类脉冲中立型时滞抛物方程组解的振动性,得到了该类方程组在两类不同边界条件下所有解振动的若干充分条件.     

Differential algebraic equations with after-effect

In this paper, we are concerned with the solution of delay differential algebraic equations. These are differential algebraic equations with after-effect, or constrained delay differential equations. The general semi-explicit form of the problem consists of a set of delay differential equations combined with a set of constraints that may involve retarded arguments. Even simply stated problems of this type can give rise to difficult analytical and numerical problems. The more tractable examples can be shown to be equivalent to systems of delay or neutral delay differential equations. Our purpose is to highlight some of the complexities and obstacles that can arise when solving these problems, and to indicate problems that require further research.     

Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

新疆红景天红色素的提取及理化性质的研究

对用索氏提取法和乙醇浸取法提取红景天红色素进行了比较，并探讨浸取的浓度，浸取温度等因素，指出了最佳生产工艺条件，从红景天中提取的天红色素是一种安全无毒的食用色素，本文还研究了几种食品添加剂对红景天红色素稳定性的影响，并对色素的耐氧化性进行了探讨，旨在为红景天红色素的开发利用提供有实用价值的信息。     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

简并光学参量振荡器混沌反控制

提出一种实现简并光学参量振荡器混沌反控制的方法，用正弦信号调制简并光学参量振荡器的基模衰减率，使简并光学参量振荡器从定态输出转化为混沌态.数值模拟结果表明，选择不同的调制幅度和调制角频率，只要满足系统的最大李雅谱诺夫指数大于零，即可实现不同的混沌轨道重构.通过比较最大李雅谱诺夫指数λ_max随调制幅度和调制角频率变化曲线， 指出系统从周期态调制到混沌态比从无亚谐波输出的定态调制到混沌态更容易，有更宽的调制幅度和调制角频率选择范围. 关键词： 简并光学参量振荡器 混沌反控制 调制     

有Edgeworth展式的分布的随机加权逼近的重对数律

本文研究了未知分布的逼近问题，利用随机加权法，给出了有Edgeworth展式的一类（未知）分布的模拟分布，证明了在一定条件下，模拟分布与未知分布的逼近精度达到O(n^-1√lnlnn），称之为随机加权逼近的重对数律。     

PRELIMINARY RESEARCHES ON LICHENOMETRIC CHRONOLOGY OF HOLOCENE GLACIAL FLUCTUATIONS AND ON OTHER TOPICS IN THE HEADWATER OF URUMQI RIVER, TIAN-SHAN MOUNTAINS

This paper introduced briefly the research results on lichenometry of the Holoceneglacial fluctuations in the headwater of the Urumqi River, in the central TianshanMountains and discussed the histories of the Holocene glaciers and the climate. It isconsidered that lichenometry is one applicable method for dating the mid- and late-Holocene deposits in the cold and mountainous regions. Rhizocarpon geographicum (L.)DCand Xanthoria elegans (Link.) Th. Fr. could be used for dating the deposits of about 4500and 500 a B.P. respectively. There existed at least four periods of glacial advances whichoccurred before about 5700, 4100, 2800 and 403- 74 a B. P. respectively with the firstperiod the longest. Little Ice Age includes three stages of glacial advances which endedbefore about 403, 208 and 74 a B. P. respectively with the second stage the maximum.During the general Holocene warming processes, there existed at least four cold peri-ods which ended before about 5700, 4100, 2800 and 420- 91 a B.P. respectively,