铁电双层膜的反转动力学行为

基于Landau-Khalatnikov运动方程,本文研究了含有表面过渡层和铁电界面耦合的反转动力学行为(包括平均极化、反转时间、反转电流和矫顽场).研究结果表明:在铁电双层膜系统中存在一个竞争的机理,即表面过渡层与界面耦合的竞争作用.我们发现在双层膜反转过程中出现了反常行为,这些反常行为归因于表面过渡层与界面耦合之间的竞争.表面过渡层与界面耦合的共同行为对铁电双层膜的动力学特性起到了决定性的作用.     

谷值电流型脉冲序列控制开关变换器及其能量建模研究

脉冲序列控制是针对工作于电感电流断续导电模式的开关变换器提出的一种非线性、离散控制技术.当开关变换器工作在电感电流连续导电模式时,脉冲序列控制开关变换器存在低频振荡现象,严重影响了脉冲序列控制开关变换器的稳态及瞬态性能.针对这一问题,本文提出一种谷值电流型脉冲序列控制方法,将脉冲序列控制的应用范围从电感电流断续导电模式扩展到电感电流连续导电模式.建立了谷值电流型脉冲序列控制开关变换器的能量迭代模型,并与传统脉冲序列控制开关变换器的能量模型进行对比.结果表明谷值电流型脉冲序列控制电感电流连续导电模式开关变换器具有与传统脉冲序列控制电感电流断续导电模式开关变换器相同的能量传递模式,从而在根本上消除了传统脉冲序列控制电感电流连续导电模式变换器存在的低频振荡现象.     

基于序列图象对应概率累积的基础矩阵求解方法*

提出一种基于图象序列对应概率累积的基础矩阵求解算法.该算法基于序列对应概率累积求最大熵点的对应概率累积分布图,采用RANSAC思想和加权最小二乘法拟合极线,通过统计分类器求解极点并消除出格极线,并利用所求的对应极线和极点,采用一种参量化方法求解F矩阵.该算法工程实现容易,对输入的源图象没有苛刻的要求,可以基于随机拍摄的图象序列方便地求解F矩阵.     

扩频原理在聚合物光纤性能测量中的应用

提出了一种将扩频通信原理用于聚合物光纤性能测量的新方法,使用伪随机序列对注入测量系统的光信号进行调制,实现输入光信号的扩展频带,输出光信号经光电转换后,用伪随机序列对信号进行解扩处理,根据扩频原理,解扩后的信号的信噪比会有较大提高.对测量系统的性能进行了仿真分析并与实验结果进行了比较,结果表明该方法可以精确地测量信噪比低于-20 dB的有用信号波形.     

基于单目图像和方向的测距系统及性能分析

 针对非合作大目标的被动测距问题,介绍了一种基于单目图像序列和成像方向的测距系统,并进行了性能分析.这种测距系统的特点是无需初始距离导引,它对目标距离的估计借助于专门的定位方程,方程由目标特征线度、摄像机的空间坐标、目标在采样时刻对相机的方位角和俯仰角决定.其中,方位角和俯仰角通过光电经纬仪获得,摄像机的空间坐标通过GPS获得,目标特征线度通过相邻帧图像匹配得到.分析表明,该系统的性能主要取决于特征线度的准确度,其他测量误差如目标的方位角、俯仰角和摄像机的空间坐标对其影响较小.目标特征线度选取时,在相邻帧目标图像匹配点中,筛选出三个具有较大极限的尺度不变特征变换关键点,构造三角形及其外接圆,在外接圆上取经过三角形重心且平行或垂直于尺度不变特征变换主方向的弦线作为特征线度,这种特征线度对目标旋转不敏感.实验结果表明这种测距方法能够实现对非合作大目标的被动测距.     

Kerr缺陷一维耦合腔光波导的双稳态方向性

本文提出一种只在一层高折射率介质层中掺杂Kerr介质的一维耦合腔光波导.利用一维传输矩阵理论和非线性传输矩阵方法研究了此结构的光学双稳态.根据一维传输矩阵理论分析了此结构的线性特性,包括低频带边模的偏移及场分布的特点,讨论了此结构实现双稳态的原理.研究发现:由于缺陷层中场分布与入射光方向密切相关,而缺陷层光场的局域,将激发Kerr介质的三阶非线性效应,从而改变了缺陷层的折射率,所以不同方向的入射光具有不同的双稳态阈值.利用非线性传输矩阵方法研究了光学双稳态特性.结果表明:由于缺陷层的位置导致缺陷模正方向（由左到右）入射的场分布大于反方向（由右到左）入射的场分布,正方向的阈值低于反方向的阈值,相差一倍.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.     

Multilevel resistive switching and synaptic behaviors in MnO-based memristor

Exploring new synaptic electronic devices that combine computing and memory is a promising strategy that fundamentally approaches intelligent machines. In this study, the multilevel resistive switching and synaptic behaviors of a MnO-based device is studied. The device is composed of Al/MnO/Ni sandwich structure, has stable resistance switching characteristics, has continuous nonvolatile memory state, can be used as electrically programmable and erasable analog memory. The gradual conductance modulation is realized by changing the compliance current and the maximum scanning voltage. The Al/MnO/Ni devices successfully mimic the basic functions of synapses, including the paired-pulse facilitation, spike-rate-dependent plasticity, excitatory postsynaptic current, short-term plasticity, long-term plasticity, and sike-timing-dependent plasticity.     

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.