红外地球敏感器扫描镜摆角激光动态测试方法

为解决扫描镜摆角实时动态非接触测量问题,基于激光检测技术和CCD探测技术,提出一种红外地球敏感器扫描镜摆角激光动态测试方法,并研制了扫描镜摆角动态测试系统,其可实现扫描镜的摆动频率、零位角、幅值、峰峰值平均等参量的动静态激光非接触测量。介绍了系统的组成和总体结构,着重对扫描镜摆角动态测量理论和大视场、大相对孔径特殊线性扫描光学系统的设计方法进行了分析与探讨,通过建立系统的数学模型,解决了测量数据误差修正与图形处理问题。对测量系统的精度进行了验证,结果表明系统的摆角测量范围为0~±12°,分辨力为0.01°,动静态测量精度优于±0.04°。     

以创新为主线，探索“节约型”实验室建设的思路

本文主要介绍长春理工大学理学院固体激光实验室,努力建设“节约型”实验室的工作实践。该实验室始终坚持勤俭办学,自主创新的理念,不断发挥资源优势,通过多种渠道建设实验室。经过多年的努力,固体激光实验室在国内高校同类专业实验中已处于领先地位。     

An extension of the Erdős‐Tetali theorem

Given a sequence , let r_??,h(n) denote the number of ways n can be written as the sum of h elements of ??. Fixing h ≥ 2, we show that if f is a suitable real function (namely: locally integrable, O‐regularly varying and of positive increase) satisfying then there must exist with for which r_{??,h + ?}(n) = Θ(f(n)^{h + ?}/n) for all ? ≥ 0. Furthermore, for h = 2 this condition can be weakened to . The proof is somewhat technical and the methods rely on ideas from regular variation theory, which are presented in an appendix with a view towards the general theory of additive bases. We also mention an application of these ideas to Schnirelmann's method.     

Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping

In this paper, we performed a comprehensive scaling study of a carbon nanotube field-effect transistor (CNTFET) with halo doping (HD) using self-consistent and atomistic scale simulations. Our simulation results demonstrate that drain induced barrier lowering (DIBL) diminishes in the HD-CNTFET due to a step in the potential of the CNT at the interface of p-doped and undoped regions in the channel. Also, the hot carrier effect minimizes with reduction of the peak of the electric field at the drain side of the HD-CNTFET. Moreover, the features of the HD-CNTFET can be controlled by the length and concentration engineering of the HD region. Leakage current, on–off current ratio and subthreshold swing improve with an increase of the length and concentration of the HD region, due to the increment of the threshold voltage and the barrier height of the p–n junction near the source. Therefore, this work can provide an incentive for further experimental exploration.     

新型径向边加载渡越时间振荡器

 根据渡越时间效应3维理论研究,设计了一种工作于6.1 GHz的新型径向边加载渡越时间振荡器。为增强电子束在谐振腔中的横向摆动,部分加大了高频结构中金属圆筒端部的宽度,以增大横向电场的的分布区域。3维理论分析表明,该器件的效率可以超过50%。粒子模拟研究表明,该器件在170 kV,18 kA的电子束激励下,平均输出功率达到1.6 GW,束波互作用效率为52.3%。     

Bifunctional RuII‐Complex‐Catalysed Tandem C−C Bond Formation: Efficient and Atom Economical Strategy for the Utilisation of Alcohols as Alkylating Agents

Catalytic activities of a series of functional bipyridine‐based Ru^II complexes in β‐alkylation of secondary alcohols using primary alcohols were investigated. Bifunctional Ru^II complex ( 3 a ) bearing 6,6’‐dihydroxy‐2,2’‐bipyridine (6DHBP) ligand exhibited the highest catalytic activity for this reaction. Using significantly lower catalyst loading (0.1 mol %) dehydrogenative carbon?carbon bond formation between numerous aromatic, aliphatic and heteroatom substituted alcohols were achieved with high selectivity. Notably, for the synthesis of β‐alkylated secondary alcohols this protocol is a rare one‐pot strategy using a metal–ligand cooperative Ru^II system. Remarkably, complex 3 a demonstrated the highest reactivity compared to all the reported transition metal complexes in this reaction.     

Scheme for implementing an economical phase-covariant quantum cloning machine of distant atomic qubits with single-photon interference

By means of cavity-assisted photon interference, a simple scheme is proposed to implement a symmetric economical phase-covariant quantum cloning machine of two remote qubits, with each in a separate cavity. With our present scheme, a high-fidelity cloning machine is realized. Our scheme may be quite useful in terms of distributed quantum information processing.     

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ($V_{\mathrm{o}}^{+}$) in addition to the commonly reported doubly charged oxygen vacancies ($V_{\mathrm{o}}^{2+}$). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of $V_{\mathrm{o}}^{+}$ under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.     

摆杆和摆杆座质量对复摆实验的影响

通过理论分析证明复摆实验装置中摆杆和摆杆座质量对实验的影响,指出在摆杆和摆杆座的质量不能忽略的情况下,由摆杆、摆杆座和摆锤组成的刚体并非固定刚体。针对现有的刚体系统重新设计实验方案,推导出利用该装置测量重力加速度的理论公式,实验结果证明该方案切实可行。