Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to the TFET device design, simulation, and fabrication.     

Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures

Tunneling field effect transistors(TFETs) based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types: in-plane and vertical heterostructures composed of two kinds of layered phosphorous(β-P and δ-P) by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio(PVR)when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of ～ 10~6 and a steeper subthreshold swing(SS) of ～ 23 m V/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.     

大尺寸金红石(TiO2)单晶体生长条件的实验研究

采用高纯(99.995;)、超细的金红石(TiO2)粉末为起始原料,用燃熔法制备了尺寸为30mm×50mm的金红石(TiO2)单晶体.讨论了生长气氛、生长速度、温度梯度在晶体生长中的作用,对比了晶体在空气中与在氧气中退火的结果,测定了晶体试样的摇摆曲线和透过率,并与商用晶体的透过率进行了比较.实验表明:生长气氛中的氧分压大于液固界面(即生长界面)处熔体的氧离解压是生长完整晶体的必要条件;在此条件下,能否生长为大尺寸晶体则取决于炉膛的轴向温度梯度;晶体在退火过程中可消除热应力,但退火更重要的作用是通过氧化反应消除氧空位,在氧气氛中退火,可明显缩短退火时间;所制备的晶体完整性较好,透过率与商用晶体基本一致.     

红外地球敏感器扫描镜摆角激光动态测试方法

为解决扫描镜摆角实时动态非接触测量问题,基于激光检测技术和CCD探测技术,提出一种红外地球敏感器扫描镜摆角激光动态测试方法,并研制了扫描镜摆角动态测试系统,其可实现扫描镜的摆动频率、零位角、幅值、峰峰值平均等参量的动静态激光非接触测量。介绍了系统的组成和总体结构,着重对扫描镜摆角动态测量理论和大视场、大相对孔径特殊线性扫描光学系统的设计方法进行了分析与探讨,通过建立系统的数学模型,解决了测量数据误差修正与图形处理问题。对测量系统的精度进行了验证,结果表明系统的摆角测量范围为0~±12°,分辨力为0.01°,动静态测量精度优于±0.04°。     

以创新为主线，探索“节约型”实验室建设的思路

本文主要介绍长春理工大学理学院固体激光实验室,努力建设“节约型”实验室的工作实践。该实验室始终坚持勤俭办学,自主创新的理念,不断发挥资源优势,通过多种渠道建设实验室。经过多年的努力,固体激光实验室在国内高校同类专业实验中已处于领先地位。     

万有引力常量G的测量

介绍了测量万有引力常量G的意义、历史与现状.具体讨论测量万有引力常量G的几种方法,着重阐述周期法测G的基本原理及原子干涉法测G的新进展.     

吸附剂吸附特性的实验研究

实验研究了变压吸附系统中不同吸附剂的吸附特性,分析了不同因素对各种吸附剂吸附性能的影响,包括吸附温度、吸附压力和时间。研究发现不同吸附剂的吸附效率在不同的时间段显现出相反情况,提出了吸附剂的选择与运用需要考虑切换时间这一观点。最后得出了本试验装置的最佳压力与温度的变化范围(0.2MPa-0.25MPa,20℃-30℃)。     

Separation of H2O/CO2 Mixtures with Layered Adsorption Method for Greenhouse Gas Control

Multiple-layered vacuum swing adsorption technique was used and investigated in order to effectively keep the feed gas that flows into zeolite 13X zone being dry and keep the CAPEX down(not adding pre-treatment equipment). Activated carbon fiber(ACF) and alumina CDX were laid at the lower parts of the column as pre-layers to selectively adsorb moisture. Zeolite 13X was laid on the top of those two adsorbents as the main layer to capture CO₂. Systematic cyclic experiments show that water vapor was successfully contained within the ACF and CDX layers at cyclic steady states. It was also found that ultimate vacuum pressure played a decisive factor for stabilizing the water front, and achieving good CO₂ purity and recovery. The findings also reveal the pathway for large-scale CO₂ capture process.     

葡萄糖还原法制备CuCl/NaY吸附剂及其CO吸附和CO/H2分离性能

以NaY分子筛为载体,CuCl2为铜源,加入还原剂葡萄糖,在温和条件下制备CuCl/NaY吸附剂,通过变压吸附考察了该吸附剂对CO的吸附性能及CO/H2的分离性能。运用X射线衍射（XRD）、X射线光电子能谱（XPS）及程序升温还原（TPR）对吸附剂进行表征,结果表明采用葡萄糖还原法制备CuCl/NaY吸附剂,其制备条件温和,吸附剂表面的亚铜含量高,对CO的吸附及CO/H2的分离性能优越且稳定性好。     

基于SPH法的二维矩形液舱晃荡研究

液体晃荡是一种复杂的流体运动现象,自由液面的存在使得该现象具有很强的非线性和随机性。针对二维矩形液舱在不同振幅水平激励下的纵荡问题,应用SPH法对其进行了数值研究。首先计算了小振幅激励下的纵荡,计算结果分别与线性理论解、文献VOF法结果及文献SPH法结果作了比较分析,以验证所建数值模型的合理性;然后计算了液舱在大振幅水平激励下的纵荡,着重分析了不同振幅下液体晃荡的速度向量图、液面波动时程、压强波动时程、动量波动时程以及波动的频谱图,并将计算所得液面波动结果与小振幅激励下的液面波动结果作了比较。分析结果表明,在大振幅水平激励下,液面波动的波峰值较小振幅下的结果有较为明显的增大,而波谷值则无过大的变化,总体波动幅值比小振幅下的结果大;随着激励幅值的增大,液面波动幅值呈现明显增大的趋势,压强的整体波动幅值也呈增大趋势,动量波动的均值亦有明显增大;波动能量随着激励幅值的增大而增大并向第一阶频率区域集中。SPH法对处理液体大幅晃荡这种具有自由表面大变形的问题有十分优越的特性。