Laser ranging based on electro-optic switch

Based on electro-optic switch effect in crystal, a novel laser ranging method is proposed. CW-laser emitted by laser transmitter propagates forward to the measured target, after being reflected by the target, and then goes back to the transmitter. Close to the transmitter, a special mono-block LiNbO₃ crystal is added into the round-trip light beams. High-voltage pulses with the sharp enough changes in rising edges are loaded on the crystal. Based on electro-optic effect, double refraction and internal double reflection effect in crystal, the crystal cuts off the round-trip light beams, and reflects a light pulse cut out by the crystal to a detector aside from the original beam path. The pulse width T is the period that laser propagates forward and back between the crystal and the target. The feasibility of the new idea is proved by our experiments and a brand-new way for the laser ranging is provided.     

On a singular perturbation problem with two second-order turning points

In this paper, we study the singular perturbation problem

where 0<ε1 is a small positive parameter, p(x) and q(x) are sufficiently smooth and strictly positive functions. The main feature of this equation is that there are two second-order turning points in the interval (0,1). Based on the rigorous results on singular perturbation problems with one second-order turning point in our previous work, we obtain a uniform asymptotic approximation for the general solution of the above equation by means of a matching technique.     

Two-dimensional problem of two Coulomb centers at small intercenter distances

We use analytic methods to analyze the discrete spectrum for the problem (Z₁eZ₂)₂ in the united-atom limit (R ≪ 1) and obtain asymptotic expansions for the quantum defect and energy terms of the system (Z₁eZ₂)₂ at small intercenter distances R up to terms of the order O(R⁶). We investigate the effect of the dimensionality factor on the energy spectrum of the hydrogen molecular ion H ₂ ⁺ . __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 148, No. 2, pp. 269–287, August, 2006.     

Free convection flow over a truncated cone embedded in a porous medium saturated with pure or saline water at low temperatures

Steady free convection boundary layer about a truncated cone embedded in a porous medium saturated with pure or saline water at low temperatures has been studied in this paper. The governing coupled partial differential equations are solved numerically using a very efficient finite-difference method. Several new parameters arise and the results are given for some specific values of these parameters. The obtained results for a Boussinesq fluid are compared with known results from the open literature and it is shown that the agreement between these results is very good.     

固定波长应变量子阱的设计与比较

针对ｌｎＧａＡｓＰ材料，我们比较了不同应变与阱宽组合的固定波长应变量子阱特性压应变下量子阱的应变量越大，阱宽越窄，其能带结构越理想张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大，以及其较大的态密度，使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多如果固定的张应变量只能使第一子带为ＬＨ，第二子带为ＨＨ，则存在一个最优的阱宽，阱宽太小不能消除ＬＨＩ与ＨＨ２的耦合，阱宽太大又会带来ＬＨ３与ＨＨ２的耦合，同样会有不利影响     

Study of a Waveguide CO_2 Laser with Two Parallel Tubes

ＳｔｕｄｙｏｆａＷａｖｅｇｕｉｄｅＣＯ２ＬａｓｅｒｗｉｔｈＴｗｏＰａｒａｌｅｌＴｕｂｅｓＨＵＡＮＧＹｕａｎｇｑｉｎｇ（Ｄｅｐｔ．ｏｆＳｃｉ．Ｉｎｓｔｒ．ａｎｄＰｒｅｃｉｓｉｏｎＭｅｃｈ．ｏｆＸｉａｍｅｎＵｎｉｖ．，Ｘｉａｍｅｎ，３６１００５，Ｃｈｉｎ...     

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×10³ ohm⁻¹ cm⁻¹ (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×10¹⁹ cm⁻³ and mobility μ=98 cm²/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.     

BOUNDARY AND CORNER LAYER BEHAVIOR IN SINGULARLY PERTURBED ROBIN BOUNDARY VALUE PROBLEM

This paper is concerned with boundary and corner layer behavior of the singularly perturbed Robin boundary value problem(RP) for the second-order nonlinear differential equations. The existence and asymptotic estimate of solutions of (RP) is discussed by appropriately constructing the bounding functions and using the theory of differential inequality.     

薄层流中的一类三阶奇摄动边值问题的渐近分析

本文研究薄层流中出现的一类三阶奇摄动数学模型．本文不采用研究其渐近等价的二阶奇摄动微分方程的方法,而利用边界层函数法,直接讨论该数学模型的渐近解,并严格地证明了解的存在唯一性和其渐近解的一致有效性．本文的结果不仅去掉了以往方法所必须的位势条件,纠正了某个不适定的假设,而且推广了以往的结果．     

Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.