离子束引起的在Al／Cr双层薄膜界面处的原子混合

用600keV的Kr~ 离子轰击Al/Cr双层薄膜样品进行界面原子反应及相互混合的研究。实验样品是在单晶硅上蒸镀约500nm厚的铝膜,相继再蒸上所需厚度的铬膜而制成的。轰击剂量为2.0×10~(15)-2.5×10~(16)Kr~ /cm~2。用2.0MeVa粒子对轰击前后的样品进行了卢瑟福背散射(RBS)分析,发现界面处有明显的原子混合存在;当轰击剂量≥1.0×10~(16)Kr~ /cm~2时,RBS谱出现有明显的坪台,经拟合计算和x射线衍射(XRD)测量证实确有化合物Al_(13)Cr_2存在;还分别得到了原子混合量及混合效率与轰击剂量的关系;最后对界面处的原子混合机制进行了讨论。     

Matrix-Untersuchungen zu monomerem Kupfer(I)-chlorid und seinen Komplexen mit N2 und PN IR-spektroskopische Nachweise und ab-initio Rechnungen

Matrix-Investigations on Monomeric Copper(I) Chloride and its Complexes with N₂ and PN Ligands. IR Spectroscopic Results and ab-initio Calculation In solid argon the reaction of monomeric CuCl with N₂ yields ClCuN₂. On the basis of two absorptions in the ir-spectrum and their corresponding isotopic shifts (_14/15N) and with the help of a normal coordinate analysis, linearity of the molecule has been deduced. These results are confirmed by large scale ab-initio Calculations (CPF, MP2). Reaction of monomeric CuCl with molecular PN under matrix condition is shown to give rise to new absorptions in the IR spectrum which arev assigned to a linear molecule ClCuNP.     

一类非线性发展方程整体弱解的存在性和稳定性

该文考虑一类新的非线性方程(｜ut｜r-2ut)t-Δutt-Δu-ρ(t)Δut=f(u) 的初边值问题，利用小扰动法证明了整体弱解的 存在性，借用位势井的概念得到了解的稳定性.〖HT5”H〗关键词:〖HT5”SS〗非线性发展方程;初边值问题;整体弱解;稳定性.     

完备流形上带位势的热核估计

在完备非紧流形上获得了关于带位势热方程正解的梯度估计；接着，利用测地线的技巧获得了Harnack不等式；进一步，建立了两个积分不等式，综合Harnack不等式获得了热核的上下界；最后，利用函数的结果来控制p形式的热核。     

One convenient synthesis route to boron nitride nanotube

We describe one convenient synthesis route to boron nitride (BN) nanotube by the reaction of boron powder, iron oxide, and ammonium chloride at 600 °C for 12 h. Characterized by XRD, FTIR, XPS, TEM and SAED, the composition and morphology of the products are confirmed. The possible reaction mechanism is also discussed.     

von-Neumann正则环与左SF-环

环R称为左SF-环,如果每个单左R-模是平坦的.众所周知,Von-Neumann正则环是SF-环,但SF-环是否是正则环至今仍是公开问题,本文主要研究左SF-环是正则环的条件,证明了:如果R是左SF-环且R的每个极大左(右)理想是广义弱理想,那么R是强正则环.并且推广了Rege[3]中的相应结果.     

Electron excitation cross section of atomic transitions in the two‐state approximation

The cross section of the 3s → 3p transition of sodium produced by electron impact has been calculated by performing a numerical integration of the coupled differential equations. The potential functions have been calculated exactly using the hydrogen‐like wave functions for the valence electron of the sodium with an effective charge adjusted to fit the experimental 3s → 3p line strength. The results compare very well with experimental data and with those obtained using more elaborate and sophisticated models.     

The world according to Rényi: thermodynamics of multifractal systems

We discuss basic statistical properties of systems with multifractal structure. This is possible by extending the notion of the usual Gibbs-Shannon entropy into more general framework—Rényi’s information entropy. We address the renormalization issue for Rényi’s entropy on (multi)fractal sets and consequently show how Rényi’s parameter is connected with multifractal singularity spectrum. The maximal entropy approach then provides a passage between Rényi’s information entropy and thermodynamics of multifractals. Important issues such as Rényi’s entropy versus Tsallis-Havrda-Charvat entropy and PDF reconstruction theorem are also studied. Finally, some further speculations on a possible relevance of our approach to cosmology are discussed.     

Control of the interfacial reactivity in the Ni/Si system

The reactivity at the Ni/Si interface is studied as a function of the sputtering conditions of the nickel film. Four systems are considered, by combining two different sputtering rates and two distinct base pressures for the deposition of the nickel 10 nm-thick film. The formation of Ni₂Si is revealed at the four interfaces by an X-ray emission spectroscopy study of the interfacial Si 3p occupied valence states. Increasing the sputtering rate is herein evidenced to decrease the quantity of silicide formed at the interface. Moreover, the combination of a high sputtering rate and a low base pressure advantageously prevents against the oxidization of the silicon surface during the metal deposition.     

Rapid magnetization reversal in magnetic small particles induced by non-static bias field

Magnetization reversal processes by a switching field in single-domain nano-sized magnetic particles in the presence of a small transverse non-static bias field are studied. Applying an oscillating bias field instead of a static field, the reversal time becomes much shorter when the switching field is slightly stronger than the effective anisotropy field. A pulsed bias field of a suitably chosen duration in the nanosecond scale is found to induce a rapid switching, even when the switching field is smaller than the anisotropy field. The dependence of the reversal time on the frequency of an oscillating bias field and the duration of a pulsed bias field are studied. The present work thus complement the earlier studies on switching in the presence of a static bias field.