基于机场货运预测的GM(1,1)建模过程问题分析

运用灰色系统GM(1,1)模型进行预测时,模拟精度和预测精度是关注的焦点.对原始数据构造缓冲算子和进行完整的前期检验,运用等维灰数递补的动态建模方法,针对误差建立残差修正模型,都可以提高预测的可信度.通过归纳建模各阶段可能出现的典型问题以及解决方法,以期对建立优化模型有所帮助.最后建立GM(1,1)模型预测天津滨海机场货邮吞吐量.     

阴极缓冲层对于不同惰性气氛气压退火处理的 P3HT∶PCBM光伏性能的影响

制备了基于聚(3-己基噻吩)(P3HT)与可溶性富勒烯衍生物(PCBM)共混体系的太阳能电池。通过改变活性层退火处理时惰性气氛环境的压强,在一定程度上实现对共混物相分离以及聚合物结晶度的控制,研究了LiF作为阴极缓冲层对不同压强下退火处理的器件性能的影响。实验发现,LiF层的关键作用在于稳定开路电压以及提升短路电流,从而带动转化效率整体提升。结果表明,LiF层可以改善器件活性层与金属电极接触的界面形态,而器件的最终性能则由活性层的微观形貌与电极界面形态共同决定。     

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

基于超二次曲面的颗粒材料缓冲性能离散元分析

自然界或工业中普遍是由非球形颗粒组成的复杂体系,与球形颗粒相比,非球形颗粒间的高离散和咬合互锁可使冲击载荷引起的能量有效衰减实现缓冲作用.基于连续函数包络的超二次曲面单元能准确地描述非球形颗粒的几何形态,并可精确地计算单元间的接触碰撞作用.本文采用离散元方法对冲击载荷作用下非球形颗粒物质的缓冲性能进行数值分析,并与圆柱体冲击的理论结果和球体冲击的实验结果进行对比验证.在此基础之上,进一步研究了筒底作用力在不同颗粒层厚度和形状等因素影响下的变化规律.计算结果表明:不同颗粒形状都存在一个临界厚度H_c.当HH_c时,缓冲率随H的增加而增加;当HH_c时,缓冲率的变化不再显著并趋于稳定值.此外,减小颗粒表面尖锐度和增加或减小圆柱形和长方形颗粒的长宽比都会提高颗粒材料的缓冲效果.     

缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响

由于ZnO缓冲层对纤锌矿ZnO/Mg_xZn_(1-x)O有限深单量子阱结构左垒的限制作用,导致阱和右垒的尺寸、Mg组分值等因素将影响系统中形成二能级.本文考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法数值求解Schr?dinger方程,获得电子的本征能级和波函数,探讨ZnO缓冲层对此类量子阱形成二能级系统的尺寸效应及三元混晶效应的影响;利用费米黄金法则探讨缓冲层、左垒、阱及右垒宽度和三元混晶效应对此类量子阱电子子带间跃迁光吸收的影响.计算结果显示:对于加入ZnO缓冲层的ZnO/Mg_xZn_(1-x)O有限深单量子阱二能级系统,左垒宽度临界值会随着阱宽和Mg组分值的增大而逐渐减小,随着右垒宽度和缓冲层厚度的增大而逐渐增大;量子阱中电子子带间跃迁光吸收峰会随着左垒、右垒尺寸以及Mg组分的增大发生蓝移,随着阱宽增大而发生红移.本文所得结果可为改善异质结器件的光电性能提供理论指导.     

Growth of Sn(O,S)2 buffer layers and its application to Cu(In,Ga)Se2 solar cells

Sn-based thin films as new buffer layer for Cd-free Cu(In,Ga)Se₂ (CIGS) solar cells were developed. The Sn(O,S)₂ films were formed on CIGS substrates by chemical bath deposition from an alkaline ammonia solution by reacting tin(IV) chloride with thiourea. Optimization of the growth process allowed the smooth and conformal coverage of the films on the CIGS substrates with a thickness of 20 nm that was a self-limited thickness in the chemical bath deposition process. XPS analysis revealed that the as-deposited films contained Sn–O, Sn–OH, and Sn–S bondings and the ratio of Sn–S bonding to Sn–O bonding was 0.3. The CIGS solar cell fabricated with a 20-nm thick Sn(O,S)₂ buffer layer had the best efficiency of 11.5% without AR coating. The open circuit voltage, short circuit current, and fill factor were 0.55 V, 34.4 mA/cm², and FF = 0.61, respectively. The open circuit voltage and fill factor were low compared to the conventional CIGS solar cell with a 50-nm thick CdS buffer due to too thin Sn(O,S)₂ buffer layer.     

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors(HEMTs) on silicon(111) substrates grown by metal organic chemical vapor deposition(MOCVD) with a novel partially Magnesium(Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.     

基于振动弛豫理论提高光抽运太赫兹激光器输出功率的研究

以半经典密度矩阵理论和分子振动弛豫理论为基础,研究添加适当比例缓冲气体与适当减小波导芯径对光抽运太赫兹激光器输出光强的影响.计算结果表明,加入适当比例缓冲气体或适当减小波导的芯径均能提高太赫兹激光的输出光强;同时优化两个参数能进一步提高抽运激光能量转化为太赫兹激光能量的效率,延长工作腔中的有效激活区,延缓抽运饱和效应的出现,提高太赫兹激光输出光强.该研究对提高光抽运太赫兹激光器的能量转化效率、提高光抽运太赫兹激光器的输出功率及实现光抽运太赫兹激光器的小型化有重要的指导意义.     

基于半导体光放大器中非线性偏振旋转效应单一光缓存环全光时隙交换处理能力研究

对基于半导体光放大器(SOA)中非线性偏振旋转效应(NPR)效应的单一光缓存环多数据包的全光时隙交换(TSI)处理能力进行了理论和实验研究,在使用归纳法导出单一缓存环实现多数据包全光时隙(TSI)必要条件的基础上,针对各种全光TSI操作要求得出了相应光数据包的调度方案,在实验上,以基于SOA中NPR效应的单一光缓存环实验系统,开展了多数据包全光TSI操作的实验研究,根据上述光数据包理论调度方案进行相应系统参数设定,进行了速率为10 Gb/s的3个和4个数据包的全光TSI实验,实验结果与理论预期相符合,研究成果为减少昂贵SOA元件的用量、简化基于光缓存环全光TSI系统的结构提供了可靠依据,对推进全光TSI技术的发展具有重要意义。     

磷酸盐缓冲溶液对邻二氮菲-Fe2+氧化法测定羟基自由基的影响

考察了不同浓度、不同体积的pH=7.4磷酸盐缓冲溶液对邻二氮菲-Fe2+氧化法检测羟基自由基体系的影响.将pH=7.4,浓度分别为0.1,0.15和0.2mol/L的磷酸盐缓冲溶液加入邻二氮菲-Fe2+体系中,随着各自缓冲溶液加入量的增加,其ΔA536不断减小,当加入量超过3mL时,ΔA536基本保持不变.采用抗坏血酸清除含有不同浓度磷酸盐缓冲溶液的邻二氮菲-Fe2+体系,实验结果表明,缓冲溶液浓度和加入量的不同,对于测定体系中清除羟基自由基的作用结果有影响.因此,邻二氮菲-Fe2+氧化法测定羟基自由基需明确体系中磷酸盐缓冲溶液的浓度及用量,在明确的统一体系中,才能进行有效的比较.