主流无载气N2-氧碘化学激光配气方式的数值优化

针对主流无载气、副流以氮气为载气的氧碘化学激光（COIL）,应用求解3维多组分化学反应流方程的数值方法,对流场和物理化学的耦合过程进行细致研究,对副流载气变化带来的问题及性能提升的手段、特别是合理的配气方式进行深入分析。结果表明:传统的在亚声速段进行喷流的配气方式不适用于主流无载气N2-COIL系统,必须采用超声速段射流方式;合理的流量配比条件下,超声速段射流方式COIL光腔位置处增益可达1.5% cm-1;N2-COIL流场边界层厚度明显减小,拓宽了增益的有效分布区域。     

硅基波导慢光器件及其应用

硅基波导慢光器件是构建全光智能互连和实时高速测控等下一代信息技术的关键器件,在光通信和光信息处理等诸多领域具有显著的技术优势和巨大的应用潜力.随着器件结构的不断创新以及微电子制造技术的不断升级换代,硅基波导慢光器件愈来愈走向实用化.文章介绍了慢光的基本原理,概述了当前国内外硅基波导慢光器件的研究进展,着重分析了基于微环谐振腔的硅基波导慢光器件,并指出了它在具体应用领域中的发展前景.     

材料力学冲击问题中结构参数影响的讨论

结构承受位于一定高度重物无初速度释放的冲击响应是材料力学动应力部分的主体教学内容,其结构形式的多样性,特别是结构单独承受冲击与缓冲组合结构承受冲击两种模式的差异,容易造成学生在规律理解上出现疑惑。本文通过几个经典例题剖析各组成部分的作用,结合基本公式的参数方次分析,为教学活动中解释相关问题提供参考。

     

缓冲层对LBO晶体上1 064 nm，532 nm增透膜附着力的影响

 采用电子束蒸发方法在LBO晶体上制备了无缓冲层和具有不同缓冲层的1 064 nm,532 nm二倍频增透膜。利用分光光度计、纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力以及抗激光损伤性能进行了测试分析。结果表明：所有样品在1 064 nm和532 nm波长的剩余反射率都分别小于0.1％和0.2％;与无缓冲层样品相比,预镀Al₂O₃缓冲层样品的附着力提高了43.1％,具有SiO₂缓冲层样品的附着力显著提高,而MgF₂缓冲层的插入却导致薄膜附着力降低。应用全塑性压痕理论和剪切理论对薄膜的附着力增强机制进行了分析。薄膜的抗激光损伤性能分析表明,SiO₂缓冲层也有助于改进薄膜的激光损伤阈值。     

1-(d-Glucopyranosyl-2′-deoxy-2′-iminomethyl)-2-hydroxynaphthalene as chemo-sensor for Fe in aqueous HEPES buffer based on colour changes observable with the naked eye

A new glucose-based C2-derivatized colorimetric chemo-sensor (L₁) has been synthesized by a one-step condensation of glucosamine and 2-hydroxy-1-naphthaldehyde for the recognition of transition metal ions. Among the eleven metal ions studied, viz., Mg²⁺, Ca²⁺, Mn²⁺, Fe²⁺, Fe³⁺, Co²⁺, Ni²⁺, Cu²⁺, Zn²⁺, Cd²⁺ and Hg²⁺, L₁ results in visual colour change only in the presence of Fe²⁺, Fe³⁺and Cu²⁺ in methanol. However, in an aqueous HEPES buffer (pH 7.2) it is only the Fe³⁺ that gives a distinct visual colour change even in the presence of other metal ions, up to a concentration of 280 ppb. The changes have been explained based on the complex formed, and the composition has been determined to be 2:1 between L₁ and Fe³⁺ based on Job’s plot as well as ESI MS. The structure of the proposed complex has been derived based on HF/6-31G calculations.     

Saturated absorption spectroscopy of buffer-gas-cooled Barium monofluoride molecules

We report an experimental investigation on the Doppler-free saturated absorption spectroscopy of buffer-gas-cooled Barium monofluoride (BaF) molecules in a 4 K cryogenic cell. The obtained spectra with a resolution of 19 MHz, much smaller than previously observed in absorption spectroscopy, clearly resolve the hyperfine transitions. Moreover, we use these high-resolution spectra to fit the hyperfine splittings of excited A(v = 0) state and find the hyperfine splitting of the laser-cooling-relevant A²Π_1/2(v = 0, J = 1/2,+) state is about 18 MHz, much higher than the previous theoretically predicted value. This provides important missing information for laser cooling of BaF molecules.     

Standardization of pH measurements based on the ion interaction approach

The Pitzer method was used to calculate the pH values on the conventional and “true” scales for the TRIS—TRIS·HCl−NaCl−H₂O buffer system in the 0–40 °C temperature region and 0–4 NaCl molality interval. This buffer can be used as a standard for pH measurements in a wide range of ionic strengths. The conventional scale is used in cells without a salt bridge. The “true” scale is recommended for pH measurements using cells with a salt bridge. At the same concentrations of the buffer solution, the “true” scale is essentially transformed into the scale of the National Bureau of Standards (NBS) of the USA. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 676–680, April, 2000.     

空间对接机构差动式机电缓冲阻尼系统机构传动原理分析

对空间对接机构中差动式机电缓冲阻尼系统的基本构成、系统主要部件及其在各种工作模式下的机构传动原理进行了较为深入的探讨，基本上搞清楚了差动式机构的结构原理，这是研究对接机构系统必须突破的一项关键技术。     

磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响

以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进GaN外延的横向生长,减少了形核岛合并时的界面数量和高度差异,降低了缺陷和位错产生的几率。研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.