Standardization of pH measurements based on the ion interaction approach

The Pitzer method was used to calculate the pH values on the conventional and “true” scales for the TRIS—TRIS·HCl−NaCl−H₂O buffer system in the 0–40 °C temperature region and 0–4 NaCl molality interval. This buffer can be used as a standard for pH measurements in a wide range of ionic strengths. The conventional scale is used in cells without a salt bridge. The “true” scale is recommended for pH measurements using cells with a salt bridge. At the same concentrations of the buffer solution, the “true” scale is essentially transformed into the scale of the National Bureau of Standards (NBS) of the USA. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 676–680, April, 2000.     

空间对接机构差动式机电缓冲阻尼系统机构传动原理分析

对空间对接机构中差动式机电缓冲阻尼系统的基本构成、系统主要部件及其在各种工作模式下的机构传动原理进行了较为深入的探讨，基本上搞清楚了差动式机构的结构原理，这是研究对接机构系统必须突破的一项关键技术。     

在c-面蓝宝石上控制生长高质量的ZnO单晶薄膜

利用Mg O和低温Zn O的缓冲层技术,在c面蓝宝石衬底上用等离子体辅助分子束外延(P-MBE)的方法生长了高质量的Zn O单晶薄膜。通过XRD测试,Zn O薄膜样品具有c轴方向的择优取向,其(002)方向摇摆曲线的半高宽(FWHM)仅为68.4 arcsec,(102)方向摇摆曲线的半高宽(FWHM)为1 150 arcsec,显示了外延薄膜极高的晶体质量。另外从扫描电子显微测试结果和原子力显微测试结果来看,Zn O薄膜具有极为平整的表面,3μm×3μm面积内的均方根粗糙度仅为0.842 nm,接近原子级的平整。拉曼光谱(Raman)和荧光光谱(PL)测试结果显示,Zn O薄膜样品内部的应力基本释放,而且具有极低的点缺陷密度。高质量Zn O单晶薄膜的实现为Zn O基的光电器件的制备提供了坚实的基础。     

磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响

以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进GaN外延的横向生长,减少了形核岛合并时的界面数量和高度差异,降低了缺陷和位错产生的几率。研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。     

High‐performance a‐Si1–xOx:H/c‐Si heterojunction solar cells realized by the a‐Si:H/a‐Si1–xOx:H stack buffer layer

We used amorphous silicon oxide (a‐Si_1–xO_x:H) and microcrystalline silicon oxide (µc‐Si_1–xO_x:H) as buffer layer and p‐type emitter layer, respectively, in n‐type silicon hetero‐junction (SHJ) solar cells. We proposed to insert a thin (2 nm) intrinsic amorphous silicon (a‐Si:H) thin film between the thin (2.5 nm) a‐Si_1–xO_x:H buffer layer and the p‐layer to form a stack buffer layer of a‐Si:H/a‐Si_1–xO_x:H. As a result, a high open‐circuit voltage (V_OC) and a high fill factor (FF) were obtained at the same time. Finally, a high efficiency of 19.0% (J_SC = 33.46 mA/cm², V_OC = 738 mV, FF = 77.0%) was achieved on a 100 μm thick polished wafer using the stack buffer layer.

     

A preemptive discrete-time priority buffer system with partial buffer sharing

This paper considers a Geo/Geo/1 discrete-time queue with preemptive priority. Both the arrival and service processes are Bernoulli processes. There are two kinds of customers: low-priority and high-priority customers. The high-priority customers have a preemptive priority over low-priority customers. If the total number of customers is equal or more than the threshold (k), the arrival of low-priority customers will be ignored. Hence the system buffer size is finite only for the low-priority customers. A recursive numerical procedure is developed to find the steady-state probabilities. With the aid of recursive equations, we transform the infinite steady-state departure-epoch equations set to a set of (k + 1) × (k + 2)/2 linear equations set based on the embedded Markov Chain technique. Then, this reduced linear equations set is used to compute the steady-state departure-epoch probabilities. The important performance measures of the system are calculated. Finally, the applicability of the solution procedure is shown by a numerical example and the sensitivity of the performance measures to the changes in system parameters is analyzed.     

Overflow and loss probabilities in a finite ATM buffer fed by self-similar traffic

In [13], real-time measurements from LANs, variable-bit-rate video sources, ISDN control-channels, the World Wide Web and other communication systems have shown that traffic exhibits a behaviour of self-similar nature. In this paper, we give new lower bounds to buffer-overflow and cell-loss probabilities for an ATM queue system with a self-similar cell input traffic and finite buffer. The bounds are better than those obtained in [20], in an important region of parameters. As in [20], they decay hyperbolically with buffer size, when the latter goes to infinity. However, in some region, a factor which accompanies the decay is higher in this paper than in [20]. This revised version was published online in June 2006 with corrections to the Cover Date.     

Simultaneous determination of electroactive and non-electroactive food preservatives by novel capillary electrophoresis with amperometric detection

A novel capillary electrophoresis and amperometric detection method was achieved by adding an electroactive additive (3,4-dihydroxybenzylamine, 3,4-DHBA) to the running buffer, so that both electroactive and non-electroactive food preservatives were simultaneously determined. Under the selected optimum conditions, four electroactive preservatives (methylparaben, ethylparaben, propylparaben and butylparaben) and two non-electroactive preservatives (potassium sorbate and sodium lactate) were well separated and sensitively detected with detection limits (S/N = 3) ranging from 1.06 × 10⁻⁸ to 2.73 × 10⁻⁶ g mL⁻¹. This method has been successfully employed for the determination of both electroactive and non-electroactive preservatives in several food commodities.     

A nitrilo-tri-acetic-acid/acetic acid route for the deposition of epitaxial cerium oxide films as high temperature superconductor buffer layers

A water based cerium oxide precursor solution using nitrilo-tri-acetic-acid (NTA) and acetic acid as complexing agents is described in detail. This precursor solution is used for the deposition of epitaxial CeO₂ layers on Ni-5at%W substrates by dip-coating. The influence of the complexation behavior on the formation of transparent, homogeneous solutions and gels has been studied. It is found that ethylenediamine plays an important role in the gelification. The growth conditions for cerium oxide films were Ar-5% gas processing atmosphere, a solution concentration level of 0.25 M, a dwell time of 60 min at 900 °C and 5-30 min at 1050 °C. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), pole figures and spectroscopic ellipsometry were used to characterize the CeO₂ films with different thicknesses. Attenuated total reflection-Fourier transform infrared (ATR-FTIR) was used to determine the carbon residue level in the surface of the cerium oxide film, which was found to be lower than 0.01%. Textured films with a thickness of 50 nm were obtained.     

Computing the Stationary Distribution of an SRBM in an Orthant with Applications to Queueing Networks

In [15], a BNAfm (Brownian network analyzer with finite element method) algorithm was developed for computing the stationary distribution of a semimartingale reflecting Brownian motion (SRBM) in a hypercube. In this companion paper, that BNAfm algorithm is extended to computing the stationary distribution of an SRBM in an orthant, which is achieved by constructing a converging sequence of SRBMs in hypercubes. The SRBM in the orthant serves as an approximation model of queueing networks with infinite buffers. We show that the constructed sequence of SRBMs in the hypercubes converges weakly to the SRBM in the orthant as the hypercubes approach the orthant. Under the conjecture that the set of the stationary distributions of the SRBMs in the hypercubes is relatively compact, we prove that the sequence of the stationary distributions of the SRBMs in the hypercubes converges weakly to the stationary distribution of the SRBM in the orthant. A three-machine job shop example is presented to illustrate the effectiveness of the SRBM approximation model and our BNAfm algorithm. The BNAfm algorithm is shown to produce good estimates for stationary probabilities of queueing networks.