基于超二次曲面的颗粒材料缓冲性能离散元分析

自然界或工业中普遍是由非球形颗粒组成的复杂体系,与球形颗粒相比,非球形颗粒间的高离散和咬合互锁可使冲击载荷引起的能量有效衰减实现缓冲作用.基于连续函数包络的超二次曲面单元能准确地描述非球形颗粒的几何形态,并可精确地计算单元间的接触碰撞作用.本文采用离散元方法对冲击载荷作用下非球形颗粒物质的缓冲性能进行数值分析,并与圆柱体冲击的理论结果和球体冲击的实验结果进行对比验证.在此基础之上,进一步研究了筒底作用力在不同颗粒层厚度和形状等因素影响下的变化规律.计算结果表明:不同颗粒形状都存在一个临界厚度H_c.当HH_c时,缓冲率随H的增加而增加;当HH_c时,缓冲率的变化不再显著并趋于稳定值.此外,减小颗粒表面尖锐度和增加或减小圆柱形和长方形颗粒的长宽比都会提高颗粒材料的缓冲效果.     

缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响

由于ZnO缓冲层对纤锌矿ZnO/Mg_xZn_(1-x)O有限深单量子阱结构左垒的限制作用,导致阱和右垒的尺寸、Mg组分值等因素将影响系统中形成二能级.本文考虑内建电场、导带弯曲及材料掺杂对实际异质结势的影响,利用有限差分法数值求解Schr?dinger方程,获得电子的本征能级和波函数,探讨ZnO缓冲层对此类量子阱形成二能级系统的尺寸效应及三元混晶效应的影响;利用费米黄金法则探讨缓冲层、左垒、阱及右垒宽度和三元混晶效应对此类量子阱电子子带间跃迁光吸收的影响.计算结果显示:对于加入ZnO缓冲层的ZnO/Mg_xZn_(1-x)O有限深单量子阱二能级系统,左垒宽度临界值会随着阱宽和Mg组分值的增大而逐渐减小,随着右垒宽度和缓冲层厚度的增大而逐渐增大;量子阱中电子子带间跃迁光吸收峰会随着左垒、右垒尺寸以及Mg组分的增大发生蓝移,随着阱宽增大而发生红移.本文所得结果可为改善异质结器件的光电性能提供理论指导.     

Growth of Sn(O,S)2 buffer layers and its application to Cu(In,Ga)Se2 solar cells

Sn-based thin films as new buffer layer for Cd-free Cu(In,Ga)Se₂ (CIGS) solar cells were developed. The Sn(O,S)₂ films were formed on CIGS substrates by chemical bath deposition from an alkaline ammonia solution by reacting tin(IV) chloride with thiourea. Optimization of the growth process allowed the smooth and conformal coverage of the films on the CIGS substrates with a thickness of 20 nm that was a self-limited thickness in the chemical bath deposition process. XPS analysis revealed that the as-deposited films contained Sn–O, Sn–OH, and Sn–S bondings and the ratio of Sn–S bonding to Sn–O bonding was 0.3. The CIGS solar cell fabricated with a 20-nm thick Sn(O,S)₂ buffer layer had the best efficiency of 11.5% without AR coating. The open circuit voltage, short circuit current, and fill factor were 0.55 V, 34.4 mA/cm², and FF = 0.61, respectively. The open circuit voltage and fill factor were low compared to the conventional CIGS solar cell with a 50-nm thick CdS buffer due to too thin Sn(O,S)₂ buffer layer.     

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors(HEMTs) on silicon(111) substrates grown by metal organic chemical vapor deposition(MOCVD) with a novel partially Magnesium(Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.     

基于振动弛豫理论提高光抽运太赫兹激光器输出功率的研究

以半经典密度矩阵理论和分子振动弛豫理论为基础,研究添加适当比例缓冲气体与适当减小波导芯径对光抽运太赫兹激光器输出光强的影响.计算结果表明,加入适当比例缓冲气体或适当减小波导的芯径均能提高太赫兹激光的输出光强;同时优化两个参数能进一步提高抽运激光能量转化为太赫兹激光能量的效率,延长工作腔中的有效激活区,延缓抽运饱和效应的出现,提高太赫兹激光输出光强.该研究对提高光抽运太赫兹激光器的能量转化效率、提高光抽运太赫兹激光器的输出功率及实现光抽运太赫兹激光器的小型化有重要的指导意义.     

基于半导体光放大器中非线性偏振旋转效应单一光缓存环全光时隙交换处理能力研究

对基于半导体光放大器(SOA)中非线性偏振旋转效应(NPR)效应的单一光缓存环多数据包的全光时隙交换(TSI)处理能力进行了理论和实验研究,在使用归纳法导出单一缓存环实现多数据包全光时隙(TSI)必要条件的基础上,针对各种全光TSI操作要求得出了相应光数据包的调度方案,在实验上,以基于SOA中NPR效应的单一光缓存环实验系统,开展了多数据包全光TSI操作的实验研究,根据上述光数据包理论调度方案进行相应系统参数设定,进行了速率为10 Gb/s的3个和4个数据包的全光TSI实验,实验结果与理论预期相符合,研究成果为减少昂贵SOA元件的用量、简化基于光缓存环全光TSI系统的结构提供了可靠依据,对推进全光TSI技术的发展具有重要意义。     

磷酸盐缓冲溶液对邻二氮菲-Fe2+氧化法测定羟基自由基的影响

考察了不同浓度、不同体积的pH=7.4磷酸盐缓冲溶液对邻二氮菲-Fe2+氧化法检测羟基自由基体系的影响.将pH=7.4,浓度分别为0.1,0.15和0.2mol/L的磷酸盐缓冲溶液加入邻二氮菲-Fe2+体系中,随着各自缓冲溶液加入量的增加,其ΔA536不断减小,当加入量超过3mL时,ΔA536基本保持不变.采用抗坏血酸清除含有不同浓度磷酸盐缓冲溶液的邻二氮菲-Fe2+体系,实验结果表明,缓冲溶液浓度和加入量的不同,对于测定体系中清除羟基自由基的作用结果有影响.因此,邻二氮菲-Fe2+氧化法测定羟基自由基需明确体系中磷酸盐缓冲溶液的浓度及用量,在明确的统一体系中,才能进行有效的比较.     

Structure and magnetic properties of γ′-Fe4N films grown on MgO-buffered Si (0 0 1)

γ′-Fe₄N thin films were grown on MgO-buffered Si (1 0 0) by pulsed laser deposition technique. Different crystallographic orientations and in-plane magnetic anisotropies were achieved by varying the growth temperature of the MgO buffer layer. When the MgO buffer layer was grown at room temperature, the γ′-Fe₄N film shows isotropic in-plane magnetic properties without obvious texture; while in-plane magnetic anisotropy was recorded for the γ′-Fe₄N films deposited on a 600 °C-grown-MgO buffer due to the formation of a (1 0 0)-oriented biaxial texture. Such a difference in in-plane magnetic anisotropy is attributed to the epitaxial growth of γ′-Fe₄N film on an MgO buffer with relaxed strain when the MgO layer was grown at a high temperature of 600 °C.     

反向开关晶体管结构优化与特性测试

对半导体脉冲功率开关反向开关晶体管 (RSD)的结构进行了优化,在RSD中引入缓冲层,建立器件数值模型并作仿真分析,结果表明:缓冲层结构起到了截止电场的作用,使得器件基区得以减薄,较传统结构RSD阻断电压升高而开通电压降低。针对RSD的特殊工作方式,提出了RSD开通电压、关断时间等关键参数的测试方案并进行了实验测量。进行了RSD大电流开通试验,直径7.6 cm的堆体在12 kV主电压下成功通过峰值电流173 kA,传输电荷32 C。     

The Use of Buffers in the Determination of Fluoride by an Ion-Selective Electrode at Low Concentrations and in the Presence of Aluminum

Abstract

The influence of the composition of buffer solutions on fluoride analyses by the fluoride ion selective electrode was studied. Residual fluoride content of reagents was observed to restrict the use of some buffers and reagents in low-level work. The optimum pH for low-level fluoride determinations was found to be around 5, which can be maintained by a sodium acetate-acetic acid buffer. Of the complexing agents studied, citrate was observed to be the most efficient masking agent for aluminum, but this ability depended strongly on ligand concentration. Citrate was also effective in masking iron (III) and magnesium ions. Tris (hydroxymethyi) aminomethane showed a similar ability to complex aluminum at a pH around 8. However, at this pH the hydroxyde ion interferes in fluoride analysis below 0.1 ppm [fbar].