Heterogeneities of grain boundary arrangement in polycrystals

Data on mutual arrangements of different types of grain boundaries in polycrystals are presented. The heterogeneity in grain boundary distribution, namely, the effect of gathering low-angle or special tilt grain boundaries is found in pure aluminum thin films, in sheets of Fe-3% Si alloy and in Al₂O₃ doped with MgO or MgO and Y ₂O₃. The local texture, i.e., formation of colonies or clusters of close-oriented grains is considered as a reason of this heterogeneity. The influences of grain boundary gathering on the transport properties of polycrystals and on the crack propagation are discussed. A new concept of effective grain size is suggested to analyze the relationship between material microstructures and material properties.     

Mechanical properties of twist grain boundaries in Cu

In a previous paper we studied the Young's and shear modulus of a high-angle twist grain boundary (5) in Cu, using the EAM, and related it to the uniaxial strain derivatives of single crystals. In this paper, we discuss elastic properties of ten additional twist grain boundaries, from 8.8–43.6°. The monolayer Young's modulus at each boundary was calculated and found to be 20–50% higher than the bulk value for all eleven boundaries for both csl and type1 structures. The monolayer shear modulus at each boundary was calculated and found to be 93–98% lower than the bulk value for six grain boundaries with csl structure and found to decrease with increasing twist angle. The critical shear stress was also calculated for eleven boundaries with csl structure and found to roughly decrease with increasing twist angle.     

Grain boundary segregation diagrams of α-iron

Based on thermodynamic analysis of interfacial segregation, the segregation enthalpy H ^o of a solute I in a given matrix was found to depend linearly on two mutually independent terms reflecting the type of interface and the solid solubility limit X _infI ^sup* at temperature T and can be written as In this equation, the structural dependence of interfacial segregation is contained in H ^*() which corresponds to the extrapolated segregation enthalpy of a solute with unlimited solubility in the matrix. The product [Tln(X _infI ^sup* )] is essentially constant with temperature, and can therefore be obtained from data for maximum solid solubility, [Tln(X _infI ^sup* )]_max. The parameter v>0 represents the relationship between the activity a _infI ^sup* of a solute at the bulk solid solubility limit in a given matrix and X _infI ^sup* , a _infI ^sup* =(X _infI ^sup* ) ^v , and is characteristic for the matrix. Using recent experimental data for silicon, phosphorus, and carbon segregation at well-characterized grain boundaries in oriented bicrystals of -iron, the averaged value was determined. Values of H ^*() range from -8 kJ/mol (general grain boundaries) up to +8 kJ/mol (special grain boundaries). These values are discussed and used for a more precise and generalized construction of grain boundary segregation diagrams of -iron.     

The Crystal Structure of Sr2TiSi2O8

Sr₂TiSi₂O₈ single crystals were grown by Czochralski pulling and from a high-temperature solution. X-ray diffractometry revealed the modulated crystal structure of Sr₂TiSi₂O₈ to belong to the 5D superspace group P4bm (−α, α, 1/2; α, α, 1/2) with α=0.3. Atomic positions, anisotropic displacement factors and positional modulation parameters for Sr₂TiSi₂O₈ are determined and discussed. The positional modulation is further investigated by electron diffraction and high-resolution transmission electron microscopy. In the latter experiments, the 2D modulation appears to be superimposed by some 1D modulation waves. This effect is discussed in terms of growth conditions.     

A ghost-cell immersed boundary method for large-eddy simulations of compressible turbulent flows

A methodology to perform a ghost-cell-based immersed boundary method (GCIBM) is presented for simulating compressible turbulent flows around complex geometries. In this method, the boundary condition on the immersed boundary is enforced through the use of ‘ghost cells’ that are located inside the solid body. The computations of variables on these ghost cells are achieved using linear interpolation schemes. The validity and applicability of the proposed method is verified using a three-dimensional (3D) flow over a circular cylinder, and a large-eddy simulation of fully developed 3D turbulent flow in a channel with a wavy surface. The results agree well with the previous numerical and experimental results, given that the grid resolution is reasonably fine. To demonstrate the capability of the method for higher Mach numbers, supersonic turbulent flow over a circular cylinder is presented. While more work still needs to be done to demonstrate higher robustness and accuracy, the present work provides interesting insights using the GCIBM for the compressible flows.     

Estimation of martensite feature size in a low-carbon alloy steel by microtexture analysis of boundaries

A methodology for classifying the hierarchy of martensite boundaries from the EBSD microtexture data of low-carbon steel is presented. Quaternion algebra has been used to calculate the ideal misorientation between product α variants for Kurdjumov–Sachs (KS) and its nearby orientation relationships, and arrive at the misorientation angle-axis set corresponding to packet (12 types), block (3 types) and sub-block boundaries. Analysis of proximity of experimental misorientation between data points from the theoretical misorientation set is found to be useful for identifying the different types of martensite boundaries. The optimal OR in the alloy system and the critical deviation threshold for identification of martensite boundaries could both be ascertained by invoking the ‘Enhancement Factor’ concept. The prior-γ grain boundaries, packet, block and sub-block boundaries could be identified reasonably well, and their average intercept lengths in a typical tempered martensite microstructure of 9Cr–1Mo–0.1C steel was estimated as 31 μm, 14 μm, 9 μm and 4 μm respectively.     

A combined transient and steady state approach for robust lifetime spectroscopy with micrometer resolution

We present the combination of two complementary micro‐photoluminescence spectroscopic techniques operating in transient and steady state condition, respectively. Introducing the time domain into the well‐established micro‐photoluminescence mapping approach operating under steady state conditions demonstrates a distinct improvement of the robustness and reliability in the determination of charge carrier lifetime measured with micrometer spatial resolution. Lifetimes from 50 ns to above ms are accessible. We elaborate a calibration procedure and apply the combined all‐photoluminescence setup to high‐performance multicrystalline silicon. A lifetime image obtained from the established photoluminescence imaging technique is reconstructed from the microscopic map by considering lateral diffusion and optical blurring, revealing a more detrimental influence of small angle grain boundaries as well as a higher lifetime within grains as may be deduced from the standard imaging technique. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low-Energy Dislocation Structure (LEDS) character of dislocation boundaries aligned with slip planes in rolled aluminium

For the specific slip geometry of two sets of coplanar systems (a total of four systems) in fcc metals, the range of dislocation networks in boundaries aligned with one of the two active slip planes is predicted from the Frank equation for boundaries free of long-range elastic stresses. Detailed comparison with experimental data for eight dislocation boundaries in cold-rolled aluminium grains of the 45° ND rotated Cube orientation is conducted. It is concluded that the boundaries are Low-Energy Dislocation Structures, which are in good agreement with the Frank equation while also lowering the energy by dislocation reactions. Cross slip plays a role in the boundary formation process.     

Stretchable Perovskite Solar Cells with Recoverable Performance

Perovskite solar cells (PSCs) are a promising photovoltaic technology for stretchable applications because of their flexible, light‐weight, and low‐cost characteristics. However, the fragility of crystals and poor crystallinity of perovskite on stretchable substrates results in performance loss. In fact, grain boundary defects are the “Achilles’ heel” of optoelectronic and mechanical stability. We incorporate a self‐healing polyurethane (s‐PU) with dynamic oxime–carbamate bonds as a scaffold into the perovskite films, which simultaneously enhances crystallinity and passivates the grain boundary of the perovskite films. The stretchable PSCs with s‐PU deliver a stabilized efficiency of 19.15 % with negligible hysteresis, which is comparable to the performance on rigid substrates. The PSCs can maintain over 90 % of their initial efficiency after 3000 hours in air because of their self‐encapsulating structure. Importantly, the self‐healing function of the s‐PU scaffold was verified in situ. The s‐PU can release mechanical stress and repair cracks at the grain boundary on multiple levels. The devices recover 88 % of their original efficiency after 1000 cycles at 20 % stretch. We believe that this ingenious growth strategy for crystalline semiconductors will facilitate development of flexible and stretchable electronics.     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.