二元光学元件

二元光学元件是一种新型的衍射光学元件,它对光学仪器的小型化、集成化起着很重要的作用。本文介绍了二元光学元件的概况,衍射透镜理论,二元光学元件的制造方法以及发展趋势。     

不共轴光学系统自动优化中的有关问题

描述不共轴光学系统计算机优化中坐标变换与逆变换、“入瞳”与光线坐标、像面基准与质量函数定义的一致性问题。     

武定县地域功能区划分方法研究

县级功能区划作为综合区划,既是落实省级主体功能区规划,又是编制县域空间发展规划的基础。首先探讨县级功能区划方法,然后以武定县为例运用主导因素法划分出城镇区、资源开发区、开发预留区、农业区、生态区等功能区。研究发现：(1)县级功能区划既要考虑县域资源环境本底与发展愿景,又要兼顾省级主体功能区对本县定位;(2)区划评价单元须考虑基础数据可获得性及各单项指标评价单元的统一;(3)指标体系选取以省级主体功能区划指标体系为参照,具有可行性;(4)单一区划方法无法合理区划县级各功能区单元,需多种方法相结合。     

Spinor Green’s functions via spherical means on products of space forms

We explicitly compute the Green’s function of the spinor Klein–Gordon equation on the Riemannian and Lorentzian manifolds of the form _M0×?×_MN$M_0\times ?\times M_N$, with each factor being a space of constant sectional curvature. Our approach is based on an extension of the method of spherical means to the case of spinor fields and on the use of Riesz distributions.     

Influence of Generalized (r, q) Distribution Function on Electrostatic Waves

Non-Maxwellian particle distribution functions possessing high energy tail and shoulder in the profile of distribution function considerably change the damping characteristics of the waves. In the present paper Landau damping of electron plasma (Langmuir) waves and ion-acoustic waves in a hot, isotropic, unmagnetized plasma is studied with the generalized (r,q) distribution function. The results show that for the Langmuir oscillations Landau damping becomes severe as the spectral index r or q reduces. However, for the ion-acoustic waves Landau damping is more sensitive to the ion temperature than the spectral indices.     

New Exact Solutions of Multi-component mKdV Equation

In this paper, new Jacobi elliptic function solutions of multi-component mKdV equation are obtained directly in a unified way. When the modulus m→1, those periodic solutions degenerate as the corresponding hyperbolic function solutions. Then, to the three-component mKdV equation, five types of effective solution are presented in detail.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.