Solute Concentration Profiles for Discontinuous Dissolution in Al-22 at. % Zn Alloy

The discontinuous dissolution reaction has been analyzed in an Al-22 at. % Zn alloy. A simulation method based on the Ziba-Pawowski equation has been used to determine the solute concentration profiles expected to form behind the receding cell boundary for various initial values of the solute concentration in the lamella at the / interface as well as the solute concentration in the newly formed solid solution at the tip of the lamella. A criterion for the applicability of the Ziba-Pawowski model has been formulated. The simulated profiles are in a very good agreement with the experimental ones obtained by using a special procedure involving in situ observation and high spatial X-ray measurements in a transmission electron microscope.     

Steady state Behaviour of a Three level Ladder Atomic System with Incoherent Population Pumping in a Squeezed Vacuum

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New experimental evidence of the structural modification in single crystal Bi2Sr2CaCu2Oy by X-ray diffraction observation

The variations of the high angle 00 peak-shape by means of X-ray l scans of the 00l fundamental reflections were investigated in detail for a highly oriented Bi₂Sr₂CaCu₂O_y (Bi2212) crystal with sufficiently small intrinsic mosaicity and the same crystal annealed in air at 250, 300, 400, 600, and 750°C for 20 h in consequence. For the first time, we observed a new additional reflection almost overlapped original 00l fundamental reflection at annealing temperature below 400°C by X-ray diffraction measurement, which shows that there coexisted two sets of lattice periodicity in the c-direction of the annealed crystal. The new additional reflection appeared at 250°C and disappeared at 400°C. Its intensity was increased at 300°C. The measurements of the AC susceptibility, c-axis parameter and full width at half maximum (FWHM) of the 00 peaks showed that the new additional reflection was associated with the oxygen diffusion in CuO₂ planes and the changes of strain field. The results provide the new experimental evidence that the structural distortion is more sensitive to the oxygen diffusion in CuO₂ planes than to that in Bi–O layers.     

高斯光束照射下的圆盘夫琅禾费衍射

推导了高斯光束照射圆孔或圆盘的衍射场普遍表达式，计算了半波带数接近于零的情况下上述衍射场的数据，进而分析了圆盘衍射场在艾里斑中增加一个暗环的原因。     

High Power THz Undulator Radiation from Linear Accelerator

A 30-MeV femto-second electron linac is built at the Shanghai Institute of Applied Physics, which can produce high power, coherent THz undulator radiation. We report the experimental facility and measurement of the power, frequency spectrum. First experiments show the averaged power at THz to be about 20mW.     

固体激光器泵浦输出波长在1428nm的单级拉曼光纤激光器

介绍了一种作为拉曼光纤放大器中的泵浦源使用的1428nm波长的拉曼单级频移光纤激光器,采用固体激光器产生的1342nm波长作为泵浦波长,得到240mW的1428nm输出,光一光转换效率在28％左右。     

Dynamic scaling of migration-driven aggregate growth

We study the kinetic behaviour of the growth of aggregates driven by reversible migration between any two aggregates. For a simple model with the migration rate K(i;j)=K′(i;j)∝i^uj^v at which the monomers migrate from the aggregates of size i to those of size j, we find that the aggregate size distribution in the system with u+v≤3 and u<2 approaches a conventional scaling form, which reduces to the Smoluchovski form in the u=1 case. On the other hand, for the system with u<2, the average aggregate size S(t) grows exponentially in the u+v=3 case and as (tlnt)^{1/(5-2u)} in another special case of v=u-2. Moreover, this typical size S(t) grows as t^{1/(3-u-v)} in the general u-2相似文献   

陈化温度和Fe/Zr配比对SO42-/Fe2O3-ZrO2固体超强酸结构与性能的影响

用低温陈化法制备了SO42 -/Fe2 O3 ZrO2 (简称SFZ)固体超强酸催化剂 ,用红外光谱 (IR)和X光衍射(XRD)对其结构进行了表征 ,并考察了它对合成癸二酸二正丁酯的催化性能 .IR谱显示 ,低温陈化的SFZ样品在10 70cm-1处吸收峰远强于常温陈化样品 .XRD分析则显示 ,在焙烧温度为 6 5 0℃、Fe/Zr为 2∶1时 ,低温陈化的样品出现了亚稳态的ZrO2 四方晶相 .该样品在催化酯化反应中使产率达 90 %以上 ,高于常温陈化样品的 30 % .研究结果表明 :在其他条件不变时 ,低温陈化所出现的亚稳态的ZrO2 四方晶相是表面酸性和催化活性增加的微观原因     

Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene,the Klein tunneling observed in pristine graphene is completely suppressed.