Impedance spectroscopy and investigation of conduction mechanism in BaMnO3 nanorods

BaMnO₃ nanorods were synthesized at 200 °C and atmospheric pressure using the composite-hydroxide mediated method. X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy were used to investigate the structure, size, morphology, phase purity and elemental composition of BaMnO₃ nanorods. Electrical characterization of BaMnO₃ pellet was performed at 300-400 K and in the frequency range 200 Hz-2 MHz. Temperature dependence of AC conductivity suggests that the BaMnO₃ pellet behaves as a semiconducting material and conduction across the pellet can be explained by the correlated barrier hopping model. Impedance analysis was performed using the equivalent circuit model (R₁Q₁C₁)(R₂C₂) and it suggests a single relaxation process in the BaMnO₃ pellet at a particular temperature. The analysis reveals that the BaMnO₃ pellet behaves like an n-type semiconductor material due to the presence of oxygen vacancies and some disorder. Modulus spectroscopy also supports the impedance results.     

Structure, electric and dielectric studies of indium-substituted magnesium copper manganese ferrites

The structure, electric and dielectric properties of In-substituted Mg-Cu-Mn ferrites having the general formula of Mg_0.9Cu_0.1Mn_0.1In_xFe_1.9−xO₄ with 0.0≤x≤0.4 have been studied. X-ray diffraction (XRD) patterns of the samples indicated the formation of single-phase cubic spinel structure up to 0.2 and mixed phase (cubic and tetragonal phase) for samples x≥0.3. The relation of conductivity with temperature revealed a semiconductor to semimetal behavior as In⁺³ concentration increases. Variation in the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms: the correlated barrier hopping (CHB) at low In⁺³ content x≤0.1 and small-polaron (SP) hopping at In⁺³ content x≥0.2. The variation in dielectric permittivity (ε′, ε″) with temperature at different frequencies shows a normal behavior for the studied compounds, while the variation in dielectric loss tangent with frequency at different temperatures shows abnormal behavior with more than relaxation peak. The conduction mechanism used in the present study has been discussed in the light of electron exchange between Fe³⁺ and Fe²⁺ ions and hole hopping between Mn²⁺ and Mn³⁺ ions at the octahedral B-sites.     

压强对空气/氩气介质阻挡放电中等离子体温度的影响

使用水电极介质阻挡放电装置,在氩气和空气的混合气体放电中,利用发射光谱法,研究了电子激发温度和分子振动温度随气体压强的变化关系。通过氩原子763.51 nm(2P₆→1S₅)和772.42 nm(2P₆→1S₃)两条谱线强度比法计算电子激发温度;通过氮分子第二正带系(C3Π_u→B3Π_g)的发射谱线计算氮分子的振动温度;对氮分子离子391.4 nm和激发态的氮分子337.1 nm两条发射谱线的相对强度进行了测量,以进一步研究电子能量的变化。实验表明,随着压强从20 kPa增大到60 kPa, 电子激发温度减小,分子振动温度减小, 氮分子离子谱线与激发态的氮分子谱线强度之比减小。     

锯齿波频率对介质阻挡放电光谱特性的影响

采用微间隙平行平板介质阻挡放电(DBD)装置,以氩气作为工作气体,研究了锯齿波激励下DBD的放电图像、发光信号、发射光谱与锯齿波频率的关系。研究发现随锯齿波频率增加,DBD会从均匀模式(低于10 kHz),经历微放电丝与均匀放电共存,并最终过渡到微放电丝占据全部的电极区(频率高于35 kHz)。外加电压和发光波形表明,锯齿波频率较低时的均匀放电对应高占空比的阶梯放电。随频率增大,出现微放电丝后,发光波形呈现多脉冲形式,且电压半周期中的发光脉冲个数随着锯齿波频率的增大而减小。当锯齿波频率高于35 kHz时,每半个电压周期的发光脉冲个数减小为一个(单脉冲放电)。通过对放电的发射光谱进行研究,发现发射光谱中包含氮分子的第二正带系(C3Π_u→B3Π_u),OH(A2Σ+→X2Π)和ArI的特征谱线。研究表明OH(308.8 nm)和ArI(750.4 nm)的谱线强度均随锯齿波频率的增大而增大。     

Electronic transmission and dwell time on a double barrier system with an accelerating quantum well

Resonant tunneling quantum structures consist of asymmetric wells and barriers have been investigated to find their optimized geometrical parameters and potential profile by the numerical calculations. The results show that the widths and the depths of the asymmetric wells have a significant effect on the transmission coefficient and the dwell time. The properties exhibited in this work may establish guidance to the device applications.     

Low temperature deposited Zr-B film applicable to extremely thin barrier for copper interconnect

We have prepared thin Zr-B films at low temperatures as a new material applicable to an extremely thin barrier against Cu diffusion in Si-ULSI metallization. The obtained Zr-B films mainly consist of the ZrB₂ phase with a nanocrystalline texture on SiO₂ and a fiber texture on Cu. The resistivity of the Zr-B films depends on the substrate of SiO₂ or Cu. The constituent ratio of B/Zr is almost 2, though the contaminants of oxygen, nitrogen, and carbon are incorporated in the film. The nanocrystalline structure of the Zr-B film on SiO₂ is stable due to annealing at temperatures up to 500 °C for 30 min. We applied the 3-nm thick Zr-B film to a diffusion barrier between Cu and SiO₂, and the stable barrier properties were confirmed. We can demonstrate that the thin Zr-B film is a promising candidate for thin film application to a metallization material in Si-ULSIs.     

PN结电容与正向直流偏压的关系

半导体PN结具有电容的性质．在正向直流偏压下,理论计算表明,PN结扩散电容的对数与正向偏压成正比．实验发现,当正向偏压小于30mV时,这种线性关系是成立的;当正向偏压大于30mV时,会偏离这种线性关系．由于PN结还具有电阻特性,对交流信号的相位有影响．随着正向偏压增大,交流信号的相位变化出现一极值．如果将PN结等效为一个电容和一个电阻并联,就可以定性解释这种变化关系．     

Optimal reactions for synthesis of nuclides of element 108

The cross sections for the production of nuclides of element 108 via hot fusion evaporation reactions are studied using a two-parameter Smoluchowski equation. The optimal reactions for the synthesis of new nuclides of element 108 with mass numbers from 266 to 271 are suggested. The macroscopic-microscopic approach predicts a strong deformed shell closure at Z \approx 108 and N=162. The synthesis of more nuclides of element 108 is meaningful to the confirmation of the existence of this deformed shell closure.     

Surface and interface electronic properties of group III-nitride heterostructures

For group III-nitrides with wurtzite structure the presence of fixed polarization interface charges yields new challenges in order to understand and control Schottky barrier heights, band offsets and 2D confinement in heterostructure FETs. In this short review experimental results obtained by in situ photoemission spectroscopy on MBE AlGaN/GaN heterostructures grown on 6H–SiC are discussed, with emphasis on the presence and interplay of surface electronic states. Schrödinger–Poisson calculations are performed to get the complete band scheme at the selected heterojunctions. Results on the polarity dependence of Pt/GaN Schottky barrier values from the literature are also discussed.     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.