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91.
Nd-Fe-B磁体烧结过程晶粒长大行为的研究   总被引:4,自引:0,他引:4  
定量描述了Nd-Fe-B磁体烧结过程晶粒长大行为,分析了烧结温度、烧结时间、合金粉末粒度及其分布对烧结过程晶粒长大的影响,讨论了烧结过程晶粒长大机制。在Nd-Fe-B磁体烧结过程开始之后的0—1h时间区段,晶粒长大迅速;随着烧结时间的延长,晶粒长大速度减小。合金粉末平均粒度增大,或者合金粉末粒度分布范围增宽,显著促进Nd-Fe-B磁体烧结过程中晶粒的长大。在Nd-Fe-B磁体的烧结过程中,存在两类晶粒长大机制,即Nd2Fe14B颗粒的溶解与析出、Nd2Fe14B颗粒的并合与长大。Nd2Fe14B颗粒的并合与长大不仅使磁体的平均晶粒尺寸增大,也使晶粒尺寸分布范围增宽,是烧结Nd-Fe-B磁体显微组织中出现异常大晶粒的根本原因。  相似文献   
92.
In the structure Ba12F19Cl5 [hexagonal space group P6 2m] the two chlorides on the sites Cl(1) and Cl(2) can partially be replaced by bromide ions. Single crystals of the type Ba12F19ClδBr5–δ with a chloride to bromide ratio up to 2 : 3 could be obtained by cooling a flux of 75 mol% BaF2 and 25 mol% BaX2 with X = Cl, Br. The crystal quality decreases with increasing bromide concentration. Structural parameters of five selected single crystals with different chloride/bromide ratio were studied by single crystal X-ray diffraction methods. The refined total Cl?/Br? population ratio in the crystals is close to the one of the flux. The lattice parameters and interatomic distances change in various ways, when the smaller chloride ion is replaced by the bigger bromide ion. The refinements show a statistical disorder on the halide sites with preferential bromide substitution on site Cl(1).  相似文献   
93.
New cubic-AGaSnS4 (A=Na, K, Rb, Cs, Tl) and orthorhombic-NaGaSnS4 compounds were synthesized by solid-state reactions and characterized by X-ray diffraction and diffuse reflectance spectroscopy. Single crystals of orthorhombic-Na1.263Ga1.263Sn0.737S4 were obtained in the crystal growth attempts of sodium compound. All six new compounds have orthorhombic AgGaGeS4 and cubic BaGa2S4 structures, as determined from single crystal X-ray structures of Na1.263Ga1.263Sn0.737S4 and cubic-AGaSnS4 (A=Na, K, Rb). Orthorhombic-NaGaSnS4 and known layered-KGaSnS4 undergo structural transformation to thermodynamically stable cubic form.  相似文献   
94.
The growth rate of isotactic polypropylene is deduced from microscopic observations during isothermal crystallizations. A change in the growth regime is observed at 138 C and interpreted as a Regime III Regime II transition, according to Hoffman's kinetic theory of polymer crystallization. A Regime II Regime I transition is also theoretically predicted at 155 C, i. e. at a temperature outside the investigated temperature range. The Regime III Regime II transition is related to the positive to negative change in the spherulite birefringence, which is generally attributed to a change in the organization of crystalline lamellae: quadritic arrays of intercrossing lamellae atT c < 138 C (Regime III) and preferentially radiating lamellae atT c > 138 C (Regime II). It is suggested that such a morphological change could be interpreted using the concept of non-adjacent re-entry introduced in Hoffman's kinetic theory. This interpretation could also explain the interspherulitic ruptures observed in negative spherulites.  相似文献   
95.
The thermal effect accompanying the transition of Cu2–xSe into a superionic conduction state was studied by non-isothermal measurements, at different heating and cooling rates (β=1, 2.5, 5, 10 and 20°C min–1). During heating the peak temperature (Tp) remains almost stable for all values of β, (136.8±0.4°C for Cu2Se and 133.0±0.3°C for Cu1.99Se). A gradual shift of the initiation of the transformation towards lower temperatures is observed, as the heating rate increases. During cooling there is a significant shift in the position of the peak maximum (Tp) towards lower temperatures with the increase of the cooling rate. A small hysteresis is observed, which increases with the increase of the cooling rate, β. The mean value of transformation enthalpy was found to be 30.3±0.8 J g–1 for Cu2Se and 28.9±0.9 J g–1 for Cu1.99Se. The transformation can be described kinetically by the model f(ǯ)=(1–ǯ)n(1+kcatX), with activation energy E=175 kJ mol–1, exponent value n equal to 0.2, logA=20 and log(kcat)= 0.5.  相似文献   
96.
Temperature has great impact on the structure and size of the linked crystallites of the conducting topmost layer formed at the surface of a polycarbonate film via the reaction BEDT-TTF+IBr [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene]. We show that fine temperature control permits formation of a semiconducting topmost layer of alpha'-(BEDT-TTF)(2)(I(x)Br(1-x))(3) crystallites with either micro- or nanometre size, a result that opens a route to miniaturized conducting plastic materials.  相似文献   
97.
刘有芹  颜芸  沈含熙 《中国化学》2005,23(9):1165-1172
A thin film of manganese hexacyanoferrate (MnHCF) was electrochemically formed on a glassy carbon (GC) electrode to prepare a chemically modified electrode (CME). The mechanism of film formation of MnHCF and its growth process were investigated in detail by cyclic voltammetry. The results show that the stoichiometric composition of MnHCF is Mn^ⅢFe^Ⅲ(CN)6, an analogue of prussian yellow. There exist three clear-cut stages in the whole modification process and the last stage is indispensable to the fabrication of homogenized, stable MnHCF film and must last for an appropriate time. The surface morphology of MnHCF/GC electrode was characterized by scanning electron microscopy (SEM), which further verified the effective deposition of MnHCF film on GC. The kinetic constants of MnHCF/GC electrode process were also evaluated. The resulting MnHCF film modified electrode presented good stability and high electrocatalytic activity toward the oxidation of H2O2, indicating that MnHCF film possesses function of catalase and can be expected for analytical purposes.  相似文献   
98.
In this work, Ba(NO3)2 crystals with single crystal face were induced by using the the method of bio-mimetic mineralization and double LB films of behenic acid (BA) as the template. The crystals were characterized by Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD). The crystals were observed in regular square shape with uniform size about 5~8 μm by SEM, and they were found by XRD to grow along the (111) plane. From these experiments, we can conclude that the good selection of the (111) crystal face of Ba(NO3)2 is due to the electrostatic interactions , the match between this crystal face and the definite lattice structure of the LB films.  相似文献   
99.
在1000 ℃用活性炭把二氧化锡粉末还原成单质锡, 锡作为催化剂, 硅片作为硅源同时作为收集衬底, 在硅片上制备出了非晶SiO2纳米灯笼. 灯笼的一端连在硅片上, 另一端为一个锡球, 中间是一些圆弧状的SiO2纳米线把两端相连. 纳米灯笼具有良好的对称性. 利用扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、选区电子衍射(SAED) 和HRTEM自带的能谱分析仪(EDS)对样品的表面形貌、微观结构和成分进行了分析研究. 结果表明, 灯笼中SiO2纳米线为非晶态, 结点是晶态锡, 结点表面覆盖一层非晶态的硅的氧化物. 结合实验条件对纳米灯笼的生长机理进行了讨论, 提出了纳米灯笼生长的一个模型.  相似文献   
100.
Fourier transform infrared techniques were used to monitor mammalian cell growth plated on attenuated total reflection (ATR) crystals. Consistently, the growth kinetics plots generated from the obtained spectra demonstrated a sigmoidal curve representing a sequence of slow, rapid, then tapering cell growth which correlated well with non-spectral cell growth determinations. Significant advantages over traditional methods of measuring cell growth kinetics are demonstrated. The technique has promising potential to be used to study events in areas such as toxicology and cell biology.  相似文献   
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