ITERATIVE APPROXIMATION OF FIXED POINTS OF NON-LIPSCHITZIAN ASYMPTOTICALLY PSEUDOCONTRACTIVE MAPPINGS

The purpose of this paper is to investigate the problem of approximating fixed points of non-Lipschitizian asymptotically pseudocontractive mappings in an arbitrary real Banach space by the modified Ishikawa iterative sequences with errors.     

Radiative lifetimes in Ce I and Ce II

New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d^26p and 4f ²5d ² configurations of Ce I and 6 even-parity levels belonging to the 5d^26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm^-1, and 42 573 to 48 152 cm^-1, respectively. Received 25 September 2002 Published online 4 March 2003     

Investigations of low- and high-spin states of <Superscript>132</Superscript>La

The fusion evaporation reaction ¹²²Sn(¹⁴N, 4n)¹³²La was used to populate the high-spin states of ¹³²La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2^- and the isomeric state 6^-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh _11/2 ⊗ νh _11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003     

辐射传递蒙特卡洛法精度分析及数值试验

本文建立了蒙特卡洛法模拟散射参与性介质内辐射传递计算模型。对蒙特卡洛法的计算精度及运行时间进行了较为详细的分析,提出了几种判断计算精度的方法。同时,借助蒙特卡洛法模拟辐射传递过程,进行数值“辐射实验”。利用该“实验结果”进行了物性反问题研究。在已知光学厚度的前提下,得到散射反照率与后半球辐射热流之间的单值函数关系。     

Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.     

Relativistic version of Landau theory of Fermi liquid in presence of strong quantizing magnetic field—an exact formalism

An exact formalism for the relativistic version of Landau theory of Fermi liquid in presence of strong quantizing magnetic field is developed. Both direct and exchange type interactions with scalar and vector coupling cases are considered.     

Effective stability for generalized Hamiltonian systems

An effective stability result for generalized Hamiltonian systems is obtained by applying the simultaneous approximation technique due to Lochak. Among these systems, dimensions of action variables and angle variables might be distinct.     

General expressions of peaked traveling wave solutions of CH-γ and CH equations

We use qualitative analysis and numerical simulation to study peaked traveling wave solutions of CH-γ and CH equations. General expressions of peakon and periodic cusp wave solutions are obtained. Some previous results become our special cases.     

一类含有P-Laplacian算子的奇异边值问题解的确切个数

讨论了一类p-L ap lac ian算子型的奇异边值问题正解的确切个数以及解的性质.     

The g-values of defects in hydrogenated microcrystalline silicon

The anisotropic g-values of defects in hydrogenated microcrystalline silicon prepared by hot-wire chemical vapour deposition have been measured as a function of crystalline volume fraction at room temperature. The defect has been identified as a silicon-dangling bond existing on the surface of crystalline grain. Their anisotropic g-values are discussed in the light of theoretical calculations by Ishii et al. and Ishii and Shimizu. The defect density is also discussed as a function of crystalline volume fraction.