Scanning Tunneling Electron Transport into a Kondo Lattice

We theoretically present the results for a scanning tunneling transport between a metallic tip and a Kondo lattice.We calculate the density of states(DOS)and the tunneling current and differential conductance(DC)under different conduction-fermion band hybridization and temperature in the Kondo lattice.It is found that the hybridization strength and temperature give asymmetric coherent peaks in the DOS separated by the Fermi energy.The corresponding current and DC intensity depend on the temperature and quantum interference effect among the c-electron and f-electron states in the Kondo lattice.     

Critical Behavior of the Blume-Emery-Griffiths Model for a Simple Cubic Lattice on the Cellular Automaton

The spin-1 Ising model with the nearest-neighbour bilinear and biquadratic interactions and single-ion anisotropy is simulated on a cellular automaton which improved from the Creutz cellular automaton (CCA) for a simple cubic lattice. The simulations have been made for several k=K/J and d=D/J in the 0≤d<3 and −2≤k≤0 parameter regions. We confirm the existence of the re-entrant and the successive re-entrant phase transitions near the phase boundary. The phase diagrams characterizing phase transitions are presented for comparison with those obtained from other calculations. The static critical exponents are estimated within the framework of the finite-size scaling theory at d=0, 1 and 2 in the interval −2≤k≤0. The results are compatible with the universal Ising critical behavior.     

Role of the d-f Coulomb interaction in intermediate valence and Kondo systems: a numerical renormalization group study

Using the numerical renormalization group method, the dependences on temperature of the magnetic susceptibility χ(T) and specific heat C(T) are obtained for the single-impurity Anderson model with inclusion of d-f the Coulomb interaction. It is shown that the exciton effects caused by this effect (charge fluctuations) can significantly change the behaviour of C(T) in comparison with the standard Anderson model at moderately low temperatures, whereas the behaviour of χ(T) remains nearly universal. The ground-state and temperature-dependent renormalizations of the effective hybridization parameter and f-level position caused by the d-f interaction are calculated, and satisfactory agreement with the Hartree-Fock approximation is derived.     

微通道中气体流动的格子Boltzmann数值模拟

采用可压缩格子Boltzmann模型及非平衡外推边界条件,数值模拟微通道中的气体在滑移区域(Kn≤0.1)内的流动,计算结果包括出口速度剖面、通道中心压力分布以及质量流率等,与理论结果及其他实验结果符合得很好.还模拟了180°弯曲通道中的气体流动.结果表明,滑移速度的存在抑制了边界层的分离,因此在弯曲处不存在漩涡.计算结果还表明,弯道的存在显著影响了气体的质量流率.     

Raman imaging and stress quantification in self‐assembled graphene oxide fiber ‘Latin Letters’

To probe the intrinsic stress distribution in terms of spatial Raman shift (ω) and change in the phonon linewidth (Γ), here we analyze self‐assembled graphene oxide fibers (GOF) ‘Latin letters’ by confocal Raman spectroscopy. The self‐assembly of GOF ‘Latin letters’ has been explained through surface tension, π–π stacking, van der Waals interaction at the air–water interface and by systematic time‐dependent investigation using field emission scanning electron microscopy analysis. Intrinsic residual stress due to structural joints and bending is playing a distinct role affecting the E_2g mode (G band) at and away from the physical interface of GOF segments with broadening of phonon linewidth, indicating prominent phonon softening. Linescan across an interface of the GOF ‘letters’ reveals Raman shift to lower wavenumber in all cases but more so in ‘Z’ fiber exhibiting a broader region. Furthermore, intrinsic stress homogeneity is observed for ‘G’ fiber distributed throughout its curvature with negligible shift corresponding to E_2g mode vibration. This article demonstrates the significance of morphology in stress distribution across the self‐assembled and ‘smart‐integrable’ GOF ‘Latin letters’. Copyright © 2016 John Wiley & Sons, Ltd.     

基于光子晶体光纤中的自相位调制的全光再生

利用高非线性光子晶体光纤中的自相位调制效应产生的超连续谱,理论上推导了超窄脉冲信号的再生机制。分别从频域和时域上形象的解释了脉冲再生的原理,该本再生方法可以适用于OTDM的信号再生。实验上对劣化了的脉冲宽度为1.7ps的携带信息的超窄脉冲信号进行了再生,再生之后的信号峰值均衡,消光比达到了15dB。再生前信号中心波长是1548.2nm,重复频率是9.96872GHz。实验中,在1554nm—1570nm和1530nm—1543nm范围内都可以得到10dB以上的再生质量。同时拟合了信号峰值功率和波长关系,得到的曲线和超连续谱曲线相吻合。     

New Explicit Rational Solitary Wave Solutions for Discretized mKdV Lattice Equation

In this letter, we study discretized mKdV lattice equation by using a new generalized ansatz. As a result,many explicit rational exact solutions, including some new solitary wave solutions, are obtained by symbolic computation code Maple.     

Improvement of modified analytic embedded atom method potentials for noble metals and Cu

The modified analytic embedded atom model (EAM) potentials considering farther neighbor atoms are improved for the noble metals (Ag, Au, Pt, Pd, Rh) and Cu. We not only adopt an end processing function and an enhanced smooth continuous condition for the pair potential, but also adjust the model parameters of multi-body potential by fitting a cohesive energy, a mono-vacancy formation energy, the Rose equation curve for the cohesive energy as a function of lattice parameter, a structure energy difference, elastic parameters and an equilibrium condition of crystal. The calculation results of structure energy differences misfit the experiment data for the noble metals and Cu in the unimproved EAM, because anyone of these differences have not been considered in the calculation of its model parameters. After the modification, the model showed better simulation results for the noble metals and Cu.     

Sizable band gap in organometallic topological insulator

Based on first principle calculation when Ceperley–Alder and Perdew–Burke–Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin–orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin–orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.