Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.     

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.     

螺旋型爆磁压缩脉冲发生器电阻及磁通损失的数值计算

基于电流和磁扩散方程,讨论了螺旋型爆磁压缩脉冲发生器(MFCG)中的电阻与磁通损耗问题,将相关的接触电阻模型、欧姆电阻的趋肤效应与邻近效应模型具体应用到2维爆轰磁流体力学程序MF-CG-Ⅳ中,进一步完善了程序的物理功能。并选用美国德克萨斯理工大学简单绕制的螺旋型爆磁压缩脉冲发生器的实验结果对新增模块进行了考证,计算结果符合物理规律,且与实验测量吻合较好。     

用毛细管测量纯水表面张力系数的误差讨论

通过用毛细管测量纯水表面张力系数实验，得到管内径d与接触角θ的相对误差之间的关系曲线，由此说明实验测得的表面张力系数α和理论公式相比呈现一定的偏差，并简单地讨论了实验的理想状态与实际情况的差别．     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Adhesion elastic contact and hysteresis effect

In this paper, we study the relationship between the pull-off force and the transition parameter (or Tabor number) as well as the variation of the pull-off radius with the transition parameter in the adhesion elastic contact. Hysteresis models are presented to describe the contact radius as a function of external loads in loading and unloading processes. Among these models, we verified the hysteresis model from Johnson－Kendall－Roberts theory, based on which the calculated results are in good agreement with experimental ones.     

Cohomological aspects of gauge theories: superfield formalism

Some of the key cohomological features of the two (1 + 1)-dimensional (2D) free Abelian- and self-interacting non-Abelian gauge theories (having no interaction with matter fields) are briefly discussed first in the language of symmetry properties of the Lagrangian densities and the same issues are subsequently addressed in the framework of superfield formulation on the four (2 + 2)-dimensional supermanifold. Special emphasis is laid on the on-shell- and off-shell nilpotent (co-)BRST symmetries that emerge after the application of (dual) horizontality conditions on the supermanifold. The (anti-)chiral superfields play a very decisive role in the derivation of the on-shell nilpotent symmetries. The study of the present superfield formulation leads to the derivation of some new symmetries for the Lagrangian density and the symmetric energy-momentum tensor. The topological nature of the above theories is captured in the framework of superfield formulation and the geometrical interpretations are provided for some of the topologically interesting quantities.     

Searching for new conditions for fermion N-representability

New elements of the dual cone of the set of fermion N-representable 2-density operators are proposed. So far, the explicit form of the corresponding necessary conditions for N-representability is obtained for N = 3. In this case the new condition is stronger than the known B- and C-conditions for 3-representability. The results provide evidence that in the spectral decomposition of the N-representable 2-density operator there exists an intrinsic relation between the eigenvalue and the corresponding eigenfunction.     

Electronic transport properties of bismuth nanobridges through silicon-nitride membranes

The electronic transport through nanostructured bismuth nanobridges has been investigated at low temperatures (T<2 K) and in magnetic fields B up to 8.5 T. The samples show reproducible resistance fluctuations as a function of B, superimposed on a large magnetoresistance of up to 50%. In addition, time-dependent resistance fluctuations in zero magnetic field demonstrate the presence of bistable scatterers in the constriction region of our samples, which are described by two-level systems. Their dynamics are shown to be sensitive to subtle modifications of the static scatterer configuration in their vicinity, which cannot be detected in the sample magnetofingerprint.     

低覆盖度的Au/GaN(0001)界面的同步辐射研究

利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明，Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金. 关键词： 同步辐射 光电子能谱 Au/GaN欧姆接触 态密度