Fermionic stochastic differential equations and the index of Fredholm operators

The index of a Fredholm operator associated to a-summable Fredholm module is expressed in terms of the vacuum expectation value of a unitary operator-valued stochastic process which satisfies a stochastic differential equation with unbounded coefficients driven by fermion noise.     

Inhomogeneous quantum groups and their quantized universal enveloping algebras

The quantum group IGL _q (N), the inhomogenization of GL _q (N), is formulated with -matrices. Theq-deformed universal enveloping algebra is constructed as the algebra of regular functionals in this formulation and contains the partial derivatives of the covariant differential calculus on the quantum space.     

Influence of the weakly interacting light U boson on the properties of massive protoneutron stars

Considering the octet baryons in relativistic mean field theory and selecting entropy per baryon S=l,we calculate and discuss the influence of U bosons on the equation of state,mass-radius,moment of inertia and gravitational redshift of massive protoneutron stars(PNSs).The effective coupling constant gu of U bosons and nucleons is selected from 0 to 70 GeV~(-2).The results indicate that U bosons will stiffen the equation of state(EOS).The influence of U bosons on the pressure is more obvious at low density than high density,while the influence of U bosons on the energy density is more obvious at high density than low density.The U bosons play a significant role in increasing the maximum mass and radius of PNS.When the value of gu changes from 0 to 70 GeV~(-2),the maximum mass of a massive PNS increases from 2.11M_⊙ to 2.58M_⊙,and the radius of a PNS corresponding to PSR J0348+0432 increases from 13.71 km to 24.35 km.The U bosons will increase the moment of inertia and decrease the gravitational redshift of a PNS.For the PNS of the massive PSR J0348+0432,the radius and moment of inertia vary directly with gu,and the gravitational redshift varies approximately inversely with gu.     

钾掺杂对三联苯的超导特性探寻

新型超导材料的设计合成及其超导机理的探索是目前凝聚态物理学领域的重要研究方向. 本文采用高真空热烧结方法制备了钾掺杂对三联苯粉末材料并表征了它们的晶体结构、分子振动、磁学及超导特性. X射线衍射图谱和拉曼光谱表明在烧结样品中除存在钾掺杂对三联苯和KH外, 还含有苯环重组的C₆₀和石墨成分. 拉曼光谱中部分峰位的红移进一步证实钾成功掺入对三联苯分子晶体中并将4 s电子转移到C原子上. 零场冷却磁性测量结果表明: 多数样品在整个温度测量区间表现为居里顺磁性, 但少数样品呈现出抗磁性, 而且在17.86, 10.00 和6.42 K三个温度点出现磁化率突降的反常行为, 其中17.86 K处的突降很可能源于钾掺杂C₆₀引起的超导转变, 而后两者可能与钾掺杂对三联苯导致的超导相关. 研究结果有助于理解金属掺杂芳香烃有机超导体这一新兴超导家族的晶体生长和物理特性, 同时也提供了一种低温制备C₆₀和石墨的新方法.     

The secondary X-ray fluorescence and absorption near the interface of multi-material: Case of EDS microanalysis

A simple model is proposed to take into account secondary X-ray fluorescence and absorption effects near the interface. This model is based on the investigation of the shape change of the first derivative equation that can fit the sigmoidal EDS profile obtained when a high vacuum electron beam passes through the interface of two adjacent materials. The contribution of the photoelectric absorption of primary X-rays (characteristic and Bremsstrahlung) and the secondary fluorescence on the degradation of the X-ray spatial resolution can be easily quantified. The close agreement between the simulated (Monte Carlo simulation using the Casino software) and the experimental data serves to assess the reliability of this developed model.     

Study on structure and properties of transition metal doped BiF3 by first-principles

Structure and physical properties of BiF₃ doped with M=Cr, Cu, Fe, Mn, Ni, Ti, V and Co are calculated by the DFT+U method. Effect of metal doping on the electronic structure and optical response of host materials BiF₃ is investigated systematically. New energy levels are formed and located within the band gap, which could decrease the recombination rate of e⁻/h⁺ pairs. Furthermore, transition metal doping extends the optical absorption of BiF₃ to the visible spectral region.     

Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature

A detailed analysis of nonlinear effects-electron switching and rectification, in InAlAs/InGaAs based Y-branch junction (YBJ) devices is presented to investigate the potential of YBJ for high frequency applications at 300 K. Results based on semi-classical simulations yield good qualitative agreement with measurements and previously reported theoretical and experimental results. The nonlinear parabolic behaviour of our device is attributed to device geometry and space charge effects. RF analysis shows that the YBJ has tremendous intrinsic potential to function as a frequency doubler and microwave rectifier when operated in the parabolic regime. The present analysis serves as a tool to optimize the bias conditions for RF measurements and to estimate the effect of interconnects and parasitic elements on the RF performance of real devices.     

5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors

The total dose effects of 5?MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100?Mrad on advanced 200?GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5?MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100?Mrad for both radiations.     

Tb2AlFe16-xMnx化合物的结构、磁性及正电子湮没谱研究

通过X射线衍射、磁测量及正电子湮没谱等手段研究了Tb₂AlFe_16-xMn_x（x=1—8）化合物的结构和磁性.X射线衍射研究结果表明Tb₂AlFe_16-xMn_x化合物具有六角相的Th₂Ni₁₇型结构.室温下的正电子湮没实验研究表明,Mn对Fe的替代导致化合物中的铁磁相互作用减弱,并且化合物中存在着较强烈的磁弹耦合效应.磁测量研究结果表明,Mn的替代导致Tb₂AlFe_16-xMn_x化合物的居里温度及自发磁化强度急剧下降. 关键词： 2AlFe_16-xMn_x化合物')" href="#">Tb₂AlFe_16-xMn_x化合物 磁弹耦合效应 居里温度