首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   4184篇
  免费   383篇
  国内免费   334篇
化学   462篇
晶体学   11篇
力学   333篇
综合类   70篇
数学   2921篇
物理学   1104篇
  2024年   4篇
  2023年   31篇
  2022年   74篇
  2021年   104篇
  2020年   87篇
  2019年   93篇
  2018年   79篇
  2017年   97篇
  2016年   126篇
  2015年   73篇
  2014年   145篇
  2013年   379篇
  2012年   190篇
  2011年   252篇
  2010年   212篇
  2009年   269篇
  2008年   282篇
  2007年   295篇
  2006年   257篇
  2005年   217篇
  2004年   172篇
  2003年   207篇
  2002年   178篇
  2001年   132篇
  2000年   125篇
  1999年   110篇
  1998年   121篇
  1997年   102篇
  1996年   72篇
  1995年   54篇
  1994年   40篇
  1993年   42篇
  1992年   28篇
  1991年   21篇
  1990年   25篇
  1989年   21篇
  1988年   29篇
  1987年   23篇
  1986年   16篇
  1985年   25篇
  1984年   14篇
  1983年   10篇
  1982年   17篇
  1981年   9篇
  1980年   6篇
  1979年   5篇
  1978年   6篇
  1977年   4篇
  1976年   9篇
  1973年   5篇
排序方式: 共有4901条查询结果,搜索用时 15 毫秒
81.
We present a short review of the experimental observations and mechanisms related to the generation of quasipatterns and superlattices by the Faraday instability with two-frequency forcing. We show how two-frequency forcing makes possible triad interactions that generate hexagonal patterns, twelvefold quasipatterns or superlattices that consist of two hexagonal patterns rotated by an angle α relative to each other. We then consider which patterns could be observed when α does not belong to the set of prescribed values that give rise to periodic superlattices. Using the Swift–Hohenberg equation as a model, we find that quasipattern solutions exist for nearly all values of α. However, these quasipatterns have not been observed in experiments with the Faraday instability for απ/6. We discuss possible reasons and mention a simpler framework that could give some hint about this problem.  相似文献   
82.
本文讨论了在实轴上具有紧支集的势的薛定谔算子的极点散射问题. 本文旨在将狄利克雷级数理论与散射理论相结合, 文中运用了Littlewood的经典方法得到关于极点个数的新的估计. 本文首次将狄利克雷级数方法用于极点估计, 由此得到了极点个数的上界与下界, 这些结果改进和推广了该论题的一些相关结论.  相似文献   
83.
Continuity, compactness, the spectrum and ergodic properties of the differentiation operator are investigated, when it acts in the Fréchet space of all Dirichlet series that are uniformly convergent in all half-planes {sC|Res>ε} for each ε>0. The properties of the formal inverse of the differentiation are also investigated.  相似文献   
84.
85.
对正弦和余弦富立叶级数,通过合并相邻同号项,使其重排成交错级数.讨论了重排形成的交错级数的敛散性.指出根据自变量x的不同取值,该交错级数可能是单调递减或周期递减的级数.按照莱布尼茨判定法提出了不同精度要求的级数项数的计算公式.选取一到三阶收敛的富立叶级数计算了不同比值精度及差值精度要求的级数项数.计算表明,在x的取值为2π的等分点时,富立叶级数的部分和随项数的增加单调地逼近其收敛值.在x的取值为其它点时,富立叶级数的部分和随项数的增加围绕收敛值上下变动,周期地逼近其收敛值.低收敛阶富立叶级数的收敛速度较慢.要达到0.01%的精度,一收敛阶富立叶级数需要数万项,二收敛阶富立叶级数也需要数百项.在不同计算点处,要达到相同的计算精度,需要的级数项数差别较大.  相似文献   
86.
The focus of this article is on the analysis of repairable systems that are subject to multiple sources of recurrence. The event of interest at the system level is assumed to be caused by the earliest occurrence of a source, thereby conforming to a series system competing risks framework. Parametric inference is carried out under the power law process model that has found significant attention in industrial applications. Dependence among the cause‐specific recurrent processes is induced via a shared frailty structure. The theoretical inference results are implemented to a warranty database for a fleet of automobiles, for which the warranty repair is triggered by the failure of one of many components. Extensive finite‐sample simulation is carried out to supplement the asymptotic findings. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
87.
Titanium dioxide (TiO2) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO2 films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO2/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
88.
作为一种过渡金属氧化物,锰氧化物以其多晶型、储/释氧能力强、蕴含丰富氧物种、结构缺陷可控等优点被广泛应用于苯系物的热催化氧化。其中,具有众多特性的氧空位能有效促进苯系物的完全催化氧化,因而成为各界研究的焦点。我们综述了常见的氧空位构建方法及表征技术,并总结了在苯系物催化氧化过程中,锰氧化物中氧空位的几种重要作用机制对催化活性和抗水性能的积极影响。最后文章对氧空位构建新方法、形成机理、具体过程及其在锰氧化物热催化氧化苯系物领域中的应用进行了总结和展望。  相似文献   
89.
90.
A new method has been proposed and verified to measure the viscoelastic properties of polymers by nanoindentation tests. With the mechanical response of load–displacement curves at different loading rates, the parameters of creep compliance and relaxation modulus are calculated through the viscoelastic contact model. Dynamic thermomechanical analysis (DMA) tests are conducted to compare the results by the proposed technique. The results show that the correlation coefficients between DMA tests and the new method are above 0.9 in the entire range, which verified the feasibility of the method. The loading curves fitted by the model are identical to the experimental curves within the discrete points and so it shows that this technique is more suitable for general linear viscoelastic materials. Numerical creep tests are carried out to examine the effectiveness of the proposed method by input the Prony series calculated by the three-element Maxwell model and the viscoelastic contact model. The good agreement shows that the proposed technique can be applied in practice.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号