A Hierarchy of Integrable Lattice Soliton Equations and New Integrable Symplectic Map

Starting from a discrete spectral problem, a hierarchy of integrable lattice soliton equations is derived. It is shown that the hierarchy is completely integrable in the Liouville sense and possesses discrete bi-Hamiltonian structure. A new integrable symplectic map and finite-dimensional integrable systems are given by nonlinearization method. The binary Bargmann constraint gives rise to a Bäcklund transformation for the resulting integrable lattice equations. At last, conservation laws of the hierarchy are presented.     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

增材制造八角桁架点阵结构材料的力学行为

基于激光选区熔化增材制造技术(SLM), 以GP1不锈钢为母材, 制备4种相对密度的八角桁架点阵结构试样, 开展了准静态单轴压缩和直接撞击式霍普金森压杆实验, 并结合显式有限元计算模拟, 研究了相对密度和加载速率对八角桁架点阵结构试样在力学响应、变形模式和吸能特性的影响. 结果显示: (1)相对密度是影响八角桁架点阵结构材料力学响应的关键参数, 屈服载荷随着相对密度基本呈线性增长, 并且表现出明显的应变率强化效应; (2)在准静态压缩下, 随着相对密度增大, 八角桁架点阵结构的变形模式由弯扭屈曲模式逐渐向稳定屈服模式转变; 而在冲击压缩下, 八角桁架点阵结构的变形模式随着冲击速度由对称稳定变形模式向非对称逐渐压垮模式转变; (3)八角桁架点阵结构总吸能随着相对密度线性增大, 而比吸能随着相对密度呈现双线性变化, 在相对密度30%处出现拐折, 当相对密度高于30%后, 比吸能增大缓慢; (4)与准静态加载相比, 冲击加载下八角桁架点阵结构的总吸能和比吸能都显著提升.     

光诱导准一维光子晶格中离散空间光孤子的相互作用

基于分步束传播法数值分析了离散空间光孤子在准一维光诱 导光子晶格中的相干与非相干相互作用过程. 结果表明: 对于相干孤子, 同相时相互吸引, 反相时相互排斥. 然而, 由于非线性响应的各向异性, 横向排布的非相干孤子会因间隔波导数目的增加而由相互吸引变为相互排斥. 并且, 沿对角方向排布的两个非相干孤子在孤子相 互作用力和布拉格反射的共同影响下, 会呈现出"钟摆式"振荡传输现象. 研究结果有助于进一步理解非线性各向异性对离散孤子相互作用的影响机制, 并为后续实验研究提供理论参考.     

Necklace solitons in Bessel photonic lattice: Stability and internal oscillation

Stability, internal modes and internal oscillation of 12-pearled necklace solitons in photorefractive crystal with imprinted Bessel photonic lattices are investigated. It is shown that the imaginary parts of internal modes are negligible comparing with real parts. The stable solitons perform long-distance and quasi-periodic oscillation of intensity and shape under the perturbation of internal modes.     

The relation between the radii and the densities of magnetic skyrmions

Compared with the traditional magnetic bubble, a skyrmion has a smaller size, and better stability and therefore is considered as a very promising candidate for future memory devices. When skyrmions are manipulated, erased and created, the density of skyrmions can be varied, however the relationship between the radii and the densities of skyrmions needs more exploration. In this paper, we study this problem both theoretically and by using the lattice simulation. The average radius of skyrmions as a function of material parameters, the strength of the external magnetic field and the density of skyrmions is obtained and verified. With this explicit function, the skyrmion radius can be easily predicted, which is helpful for the future study of skyrmion memory devices.     

上海光源储存环磁聚焦结构设计

上海光源是一台正在建设中的低发射度第三代同步辐射光源. 经过优化后, 储存环有两种直线节长度, 周长432m,在能量3.5GeV下束流发射度为3.9nm.rad, 直线节处的β函数和色散函数有足够的调节范围. 跟踪研究表明, 即使带上磁铁高阶场误差, 储存环仍有足够大的动力学孔径和能量接受度.     

Spin-correlation function of the fully frustrated Ising model and ± J Ising spin glass on the square lattice

In this work we study the correlation function of the ground state of two-dimensional fully frustrated Ising model as well as spin glass. The Pfaffian method is used to calculate free energy and entropy as well as correlation function. We estimate the exponent of spin correlation function for fully frustrated model and spin glass. In this paper an overview of the latest results on the spin correlation function is presented.     

二维顶盖驱动半圆腔内流动MRT-LBM研究

本文采用多弛豫时间格子玻尔兹曼方法(multi relaxation time lattice Boltzmann method—MRT LBM)对二维顶盖驱动半圆腔内流动进行了数值模拟,得到了雷诺数为500～50000范围内半圆腔内流场分布情况。在二维顶盖驱动半圆腔流场中,随雷诺数的增大,流场内旋涡的数目逐渐增加,且流动依次呈现出稳定流、周期流、混沌流等状态。本文计算结果表明,MRT-LBM模型可显著提高计算的稳定性,适用于大范围的雷诺数流动情况。     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.