Time and poling history dependent energy storage and discharge behaviors in poly(vinylidene fluoride-<Emphasis Type="Italic">co</Emphasis>-hexafluoropropylene) random copolymers

 We studied cycle time (0.01–10 s with triangular input waves) and poling history (continuous versus fresh poling) dependent electric energy storage and discharge behaviors in poly(vinylidene fluoride-co-hexafluoropropylene) [P(VDF-HFP)] films using the electric displacement ― the electric field (D-E) hysteresis loop measurements. Since the permanent dipoles in PVDF are orientational in nature, it is generally considered that both charging and discharging processes should be time and poling history dependent. Intriguingly, our experimental results showed that the charging process depended heavily on the cycle time and the prior poling history, and thus the D-E hysteresis loops had different shapes accordingly. However, the discharged energy density did not change no matter how the D-E loop shape varied due to different measurements. This experimental result could be explained in terms of reversible and irreversible polarizations. The reversible polarization could be charged and discharged fairly quickly (< 5 ms for each process), while the irreversible polarization depended heavily on the poling time and the prior poling history. This study suggests that it is only meaningful to compare the discharged energy density for PVDF and its copolymer films when different cycle times and poling histories are used.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Au/SrTiO3/Au界面电阻翻转效应的低频噪声分析

本文研究了Au/SrTiO₃/Au三明治结构中的双极电阻翻转效应, 观察到高、低阻态的电阻弛豫现象. 低频噪声测量表明高、低阻态的电阻涨落表现出1/f行为. 对比试验表明, 高阻态的低频噪声来源于反向偏置肖特基势垒和氧空位的迁移, 强度较大, 低阻态的噪声则源于类欧姆接触底电极区域的氧空位迁移导致的载流子涨落, 强度较低. 同时, 界面上氧空位浓度的弛豫导致了高、低阻态的弛豫过程. 关键词： 电阻翻转效应 低频噪声 氧空位     

级联二阶非线性铌酸锂全光开关的研制

以基于准位相匹配和频与差频级联二阶非线性[X^(2)：X^(2)]基础上的全光开关的理论分析作指导,进行了周期极化铌酸锂晶体(PPLN)和退火质子交换光波导(APE)的实验制备,利用所研制的PPLN-APE器件,以自行研制的工作波长为1．54μm的被动调Q掺钴铝酸镁激光器作为控制光源,以工作波长为1．5μm的连续二极管激光器为信号光源进行了级联二阶非线性全光开关实验。当控制光峰值功率为3kw,信号光功率为1mW时,实现13％的开关效率,分析了进一步提高全光开关性能的途径。     

The effects of substrate temperature on ZnO-based resistive random access memory devices

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 C substrate temperature,respectively.By comparing the data,we find that the latter device displayed better stability in the repetitive switching cycle test,and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased.After 104-s storage time measurement,this device exhibits a good retention property.Moreover,the operation voltages are very low:-0.3 V/-0.7 V(OFF state) and 0.3 V(ON state).A high-voltage forming process in the initial state is not required,and a multistep reset process is demonstrated.     

All-optical switchings of 3-hydroxyflavone in different solvents

3-hydroxyflavone （3-HF） is an organic molecule with an excited-stated intramolecular proton transfer （ESIPT） effect. All-optical switchings and beam deflections of 3-HF in three kinds of solvents （cyclohexane, ethanol and dimethyl sulfoxide） have been investigated by using the third-harmonic generation （355 nm） of a mode-locked Nd：YAG laser as a pump beam and a continuous-wave （cw） He-Ne laser （632.8 nm） as a probe beam. The nonlinear refractive indices of 3-HF in the three different solvents are determined by using the Z-scan technique under an ultraviolet （UV） pump beam at a wavelength of 355 nm. It has been found that the optical switching and beam deflection effects result from the change in refractive index of 3-HF under the irradiation of the pump beam. On the basis of the analyses of absorption spectra and fluorescence spectra, we conclude that the change in refractive index of 3-HF is due to not the thermal effect but the ESIPT effect of 3-HF under the pump beam. As the ESIPT is exceedingly fast, 3-HF might be an excellent candidate for high-speed optical switching.     

Packet switching start-stop bits generation based on bifurcation behavior of light in a micro ring resonator

This paper proposes the interesting nonlinear behavior of light known as bifurcation, where the use of such behavior in a micro ring resonator to form the secure digital codes for optical packet switching application is demonstrated. A new concept of the stop-start bits in an optical packet switching protocol is formed by using the bifurcation codes. Bifurcation is introduced when light is input into a nonlinear micro ring device, where the refractive index of an InGaAsP/InP is one of device parameters. The other parameters of the device are coupling coefficient (K) and the ring radius (R), where the ring radii used are ranged from 5 to 10 μm. Simulation results obtained have shown that the packet switching data can be secured by using the generated start-stop bits as the secured codes.     

Determination of kynurenic acid levels in rat brain microdialysis samples and changes in kynurenic acid levels induced by N‐acetylaspartic acid

The levels of kynurenic acid, an endogenous antagonist of α₇ nicotinic acetylcholine and N‐methyl‐D ‐aspartate receptors, were measured in microdialysis samples obtained from the prefrontal cortices of rats using column‐switching high‐performance liquid chromatography with fluorescence detection. When the perfusate was constantly infused at a rate of 1.0 μ/min, the in vitro recovery of kynurenic acid through the dialysis membrane was approximately 20.4%, and the precision was within 1.31%. Endogenous kynurenic acid in the microdialysis sample was clearly detected using column‐switching high‐performance liquid chromatography. As an application study, N‐acetyl‐L ‐aspartic acid, an endogenous metabolite and precursor of N‐acetyl‐L ‐aspartyl‐L ‐glutamic acid, which is an agonist of metabotropic glutamate receptors, was infused for 120 min through the microdialysis probe. The kynurenic acid level significantly increased during the infusion of N‐acetyl‐L ‐aspartic acid, suggesting that kynurenic acid might have some association with N‐acetyl‐L ‐aspartic acid in vivo. Copyright © 2009 John Wiley & Sons, Ltd.     

开关图的几个代数性质

首先对开关图的自同构群进行了研究,随即讨论了它的点传递性,并得到Calyley图的开关图依然是Cayley图.     

Electric-pulse-induced local conducting area and joule heating effect in VO2/Al2O3 films

We investigated the effect of an electric-pulse on the insulator–metal phase transition of VO₂/Al₂O₃ films using synchrotron-based infrared microspectroscopy. By monitoring the time-resolved optical response, we could demonstrate that local conducting areas are formed under the influence of the electric-pulse, and the Joule heat generated from the local current flow drives a consecutive thermal phase transition in the adjacent sample area.