光突发交换的交换控制策略和光缓存配置

光突发交换是面向下一代互联网的光交换模式.讨论了异步光突发交换系统的交换控制策略以及相应光缓存的优化配置策略.除了传统预约模式的交换策略,还研究了非预约和改进型预约模式,它们的性能评估由计算机仿真给出.结果表明:在条件相当情况下,改进型预约模式具有最低的丢包率.同时光缓存的配置对上述几类交换控制策略的性能都有很大影响,仿真结果指出:光缓存的粒度对系统性能具有重要影响,所讨论的几类交换模式都存在最佳时延粒度,研究结果对光交换矩阵的设计有指导意义.     

Absorption and propagation of light in quaterthiophene crystals

We examine absorption of light in quaterthiophene crystals for different directions of the ray and wave-normal vector after refraction on the vacuum/crystal interface. Experimental non-normal incidence spectra are reported where different absorption bands show different behaviour as a function of the angle of incidence. This allows to identify those originating from the b_u Frenkel exciton state.     

Optical absorption spectra of linear and cyclic thiophenes—selection rules manifestation

We theoretically study the size-dependent relation between absorption spectra of thiophene-based oligomers and the corresponding cyclothiophenes. In our approach based on a Frenkel exciton Hamiltonian, we demonstrate that the geometry and selection rules determine the observed relations between the spectra.     

New insights on amorphous silicon-nitride microcavities

All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.     

A tight-binding study of LUMO states in ellipsoidal silicon nanocrystals

In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.     

LINEAR ACTIVE STRUCTURES AND MODES (Ⅱ)--DISCRETE SYSTEMS AND BEAMS

The basic concepts about the active structures and some attributes of the modes were presented in paper "Liner Active Structures and Modes ( Ⅰ ) ". The characteristics of the active discrete systems and active beams were discussed, especially, the stability of the active structures and the orthogonality of the eigenvectors. The notes about modes were portrayed by a model of a seven-storeyed building with sensors and actuators. The concept of the adjoint active structure was extended from the discrete systems to the beams that were the representations of the continuous structures. Two types of beams with different placements of the measuring and actuating systems were discussed in detail. One is the beam with the discrete sensors and actuators, and the other is the beam with distributed sensor and actuator function. The orthogonality conditions were derived with the modal shapes of the active beam and its adjoint active beam. An example shows that the variation of eigenvalues with feedback amplitude for the homo-configuration and non-homo-configuration active structures.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

光参量啁啾脉冲饱和放大的增益稳定性

 光参量啁啾脉冲放大（OPCPA）在饱和放大区存在一个增益稳定点，据此设计了一个输出稳定的三级OPCPA系统；第一、二、三级分别选用准相位匹配的周期极化钛氧磷酸钾（PPKTP）晶体、LBO晶体和KDP晶体作为增益介质。饱和放大时，增益随泵浦光强度变化时的增益输出稳定性明显改善，在泵浦光强度抖动低于6%的情况下，各级光参量放大器OPA输出的增益抖动小于1%。前级采用准相位匹配的PPKTP晶体作为增益介质，在远低于破坏阈值的30MW/cm²的泵浦功率密度下，可得到2×10⁵的饱和放大增益和20%的能量转换效率。     

Gray code for derangements

We give a Gray code and constant average time generating algorithm for derangements, i.e., permutations with no fixed points. In our Gray code, each derangement is transformed into its successor either via one or two transpositions or a rotation of three elements. We generalize these results to permutations with number of fixed points bounded between two constants.     

用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.