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21.
S. Koh K. Konishi Y. Shiraki 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):440
Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×1010 cm−2, which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation. 相似文献
22.
Based on the beam coherence-polarization (BCP) matrix, the polarization property of coherent and incoherent Gaussian beam combinations is studied in detail. The general expressions for the degree of polarization P of the resulting beam in case of incoherent and coherent combinations are derived. It is shown that P is dependent on the incoherent or coherent combination, propagation distance, separation, azimuth of the polarization plane and numbers of beamlets in general. The irradiance distribution of the resulting beam for the coherent cases depends on the azimuth of the polarization plane of beamlets. However, for the incoherent case it does not. 相似文献
23.
The basic concepts about the active structures and some attributes of the modes were presented in paper "Liner Active Structures and Modes ( Ⅰ ) ". The characteristics of the active discrete systems and active beams were discussed, especially, the stability of the active structures and the orthogonality of the eigenvectors. The notes about modes were portrayed by a model of a seven-storeyed building with sensors and actuators. The concept of the adjoint active structure was extended from the discrete systems to the beams that were the representations of the continuous structures. Two types of beams with different placements of the measuring and actuating systems were discussed in detail. One is the beam with the discrete sensors and actuators, and the other is the beam with distributed sensor and actuator function. The orthogonality conditions were derived with the modal shapes of the active beam and its adjoint active beam. An example shows that the variation of eigenvalues with feedback amplitude for the homo-configuration and non-homo-configuration active structures. 相似文献
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K. Sakurai Y. Kondo K. Miyazaki T. Okamoto S. Irie T. Sasaki 《Journal of Polymer Science.Polymer Physics》2004,42(13):2595-2603
Aiming to develop a high‐performance fiber‐reinforced rubber from styrene–butadiene rubber (SBR), we applied a special technique using electron‐beam (EB)‐irradiation‐induced graft polymerization to ultrahigh‐molecular‐weight‐polyethylene (UHMWPE) fibers. The molecular interaction between the grafted UHMWPE fibers and an SBR matrix was studied through the evaluation of the adhesive behavior of the fibers in the SBR matrix. Although UHMWPE was chemically inert, two monomers, styrene and N‐vinyl formamide (NVF), were examined for graft polymerization onto the UHMWPE fiber surface. Styrene was not effective, but NVF was graft‐polymerized onto the UHMWPE fibers with this special method. A methanol/water mixture and dioxane were used as solvents for NVF, and the effects of the solvents on the grafting percentage of NVF were also examined. The methanol/water mixture was more effective. A grafting percentage of 16.4% was the highest obtained. This improved the adhesive force threefold with respect to that of untreated UHMWPE fibers. These results demonstrated that EB irradiation enabled graft polymerization to occur even on the inert surface of UHMWPE fibers. However, the mechanical properties of the fibers could be compromised according to the dose of EB irradiation. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2595–2603, 2004 相似文献
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使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法 相似文献
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用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好,薄膜的电阻温度系数(TCR)最高可达4.23%/K.从成膜机理出发,较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为,单一取向的VO2结构使薄膜晶粒具有较高的电导激活能,致密的薄膜结构减少了氧空位和晶界宽度,使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原
关键词:
VO2多晶薄膜
离子束增强沉积
热电阻温度系数 相似文献
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