Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE

In view of applications to hexagonal binary decision diagram (BDD) LSIs, a first attempt is made to form quantum BDD node switches on selectively grown (SG) embedded quantum wires (QWRs) by molecular beam epitaxy (MBE). SG branch switches controlled by a Schottky wrap gate (WPG) were successfully fabricated by MBE growth and subsequent device processing. Gate control characteristics were studied by gate-dependent Shubnikov–de-Haas measurements, and the behavior was found to be similar to that of devices fabricated on wires by etching. The switch exhibited clear conductance quantization at low temperature, and temperature dependence of the voltage slope of conductance jump was clarified. A Y-branch BDD node device using two SG branch switches was successfully fabricated, and realized clear path switching characteristics.     

一类拟线性抛物型方程广义解的Hlder连续性

考虑如下拟线性抛物型方程ｕｔ－ｄｉｖＡ（ｘ，ｔ，ｕ，ｕ）＋Ｂ（ｘ，ｔ，ｕ，ｕ）＝０在Ａ，Ｂ满足很一般的结构条件下证明了它的广义解在Ｑ＝Ｇ×（０，Ｔ）上的局部Ｈｌｄｅｒ连续性     

EXPONENTIAL GROWTH AND OSCILLATION OF NONLINEAR HOMOGENEOUS DIFFERENCEEQUATIONS

1IntroductionConsiderthenonlinearhomogeneousdifferenceequationfwhereashi>0,I--1,''5m,qandrarequotientsofpositiveoddintegers,p20,r=p q,a13'',amarepositiveintegerswithal"<''相似文献   

Simulation of the track growth and determining the track parameters

We have found the equation of the etch pit wall in solid state nuclear track detectors, as follows:

where: x is the distance along a track from the point where the particle entered the detector; V(x) is the ratio of the track etch rate to the bulk etch rate; C is the integration constant that can be determined from particle penetration depth, and y is the normal distance from the particle trajectory to the etch pit wall. The equation is derived assuming the increasing track etch rate V_t along the particle trajectory.

The above equation can be used for the simulation of the track growth and calculating the major and the minor axis of the etch pit opening. The corresponding computer program was set up. The input parameters of this program are: alpha particle energy, incidence angle and removed layer: the output are track parameters. The results obtained by this method are compared with another approach given by Somogyi and Szalay (1973) and reasonably good agreement is found.     

Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra

The single crystal of CaGa₂S₄:Eu is expected as a useful laser material with a high quantum efficiency of light emission. However, as far as our knowledge is concerned, the systematic study of the mixed compounds of Ca_(1−x)Eu_xGa₂S₄ as a function of x has not been reported up to now. Here, we have first constructed the phase diagram of the CaGa₂S₄ and EuGa₂S₄ pseudo binary system, and show that it forms the solid solution. Then we have grown single crystals of these compounds. The maximum photoluminescence efficiency is achieved at x=0.25. From the three peak energies observed in the photoluminescence excitation (PLE) and absorption spectra, the 5d excited states are suggested to consist of three levels arising from the multiplets of Eu²⁺ ions.     

Photoluminescence spectra of rare earth doped CaGa2S4 single crystals

Six kind CaGa₂S₄ single crystals doped with different rare earth (RE) elements are grown by the horizontal Bridgman method, and their photoluminescence (PL) spectra are measured in the temperature range from 10 to 300 K. The PL spectra of Ce or Eu doped crystals have broad line shapes due to the phonon assisted 4f-5d transitions. On the other hand, those of Pr³⁺, Tb³⁺, Er³⁺ or Tm³⁺ doped samples show narrow ones owing to the 4f-4f transitions. The assignments of the electronic levels are made in reference to the reported data of RE 4f multiplets observed in same materials.     

Preparation and properties of natural rubber/rectorite nanocomposites

Natural rubber (NR)/rectorite nanocomposite was prepared by co-coagulating NR latex and rectorite aqueous suspension. The transmission electron microscopy (TEM) and X-ray diffraction (XRD) were employed to characterize the microstructure of the nanocomposite. The results showed that the nanocomposite exhibited a higher glass transition temperature, lower tan δ peak value and slightly broader glass transition region compared with pure NR. The gas barrier properties of the NR/rectorite nanocomposites were remarkably improved by the introduction of nanoscale rectorite because of the increased tortuosity of the diffusive path for a penetrant molecule. The nanocomposites have a unique stress-strain behavior due to the reinforcement and the hindrance of rectorite layers to the tensile crystallization of NR.     

Dependence of thermal conductivity on electrical resistivity in Bismuth-Tellurides

The p-type (Bi_0.25Sb_0.75)₂Te₃ doped with 3-12 wt% excess Te alone and n-type Bi₂(Te_0.94Se_0.06)₃ codoped with 0.017-0.026 wt% Te and 0.068-0.102 wt% I were prepared by the Bridgman method, to produce intentionally polycrystalline. Some of the as-grown specimens were annealed, in order to prepare specimens with much different ρ. These polycrystalline specimens have almost the same degree of alignment of the c plane parallel to the freezing direction. The electrical rersistivity ρ and thermal conductivity κ were measured at 298 K along the freezing direction and κ was plotted as a function of ρ. As a result, the lattice components κ_ph obtained by subtracting the electronic component κ_el from the observed κ were found to decrease almost linearly with a decrease of ρ in both p- and n-type specimens, where κ_el was calculated using Wiedemann-Franz law. This tendency is consistent with the conventional result that κ_ph becomes negligible small in metals. The significant decrease in κ_ph with decrease in ρ is considered to be caused predominantly by the phonon scattering due to dopants. The relationship between κ_ph and ρ was first clarified in the intermediate region between the metal and insulator.     

Corkscrew振荡引起的发射度增长

 用解析方法来确定由二种因素引起的Corkscrew振荡所造成的归一发射度增长的表达式。这二种因素是电子束的非理想注入以及聚焦磁场相对于系统轴的随机偏斜。