Totally asymmetric exclusion processes at constrained m-input n-output junction points

Totally asymmetric exclusion processes at constrained m-input n-output junction points under random update are studied by theoretical calculation and computer simulation in this paper. At the junction points, the hopping rate of particles from m-input parallel lattices to n-output parallel lattices is assumed to be equal to r/n （0 〈 r 〈 1 ）. The mean-field approach and Monte Carlo simulations show that the phase diagram can be classified into three regions at any value of r. More interestingly, there is a threshold rc = n（ 1 - √1 - m/n）/m. In the cases of r 〉 re and r 〈 rc, qualitatively different phases exist in the system. With the increase of the value of m/n, the regions of （LD, LD） and （MC, LD） or （HD, LD） decrease, and the （HD, HD） is the only phase that increases in the region （LD stands for low density, HD stands for high density, and MC for maximal current）. Stationary current and density profiles are calculated, showing that they are in good agreement with Monte Carlo simulations.     

MgS和MgSe带隙的GW近似修正

应用基于密度泛函理论下的局域密度近似（DFT-LDA）方法研究了岩石矿结构的 MgS和MgSe的晶体结构和能带结构。本文得到稳定结构的晶格常数与已知实验数据相吻合,MgS和MgSe都是间接带隙半导体且带隙值分别为2.74 eV和1.70 eV。尽管本文利用LDA计算的带隙值与之前的理论值很接近,但是局域密度近似常常低估带隙值。因此应用准粒子GW（G是格林函数,W是库伦屏蔽相互作用）近似 对MgS和MgSe的带隙值进行了修正,其结果分别为4.15eV和2.74 eV。GW近似的结果应该是合适的值。     

动态广义球对称含荷黑洞的统计熵

利用改进了的brickwall膜模型,计算了动态广义球对称含荷黑洞的熵,研究结果表明,对于动态黑洞,将黑洞熵表示为与视界面积成正比时,则比例系数总与动态黑洞的视界速度有关 关键词： 广义球对称黑洞 黑洞熵 brick-wall膜模型 WKB近似     

碰撞能量对He-N2的散射截面的影响

用密耦近似方法计算了He和N2体系的微分截面和总截面及转动激发分波截面,得出微分截面及总截面随入射能量变化的规律.     

若干二维问题的WKB近似能级

讨论了二维空间的WKB近似方法，导出了Bohr-Sommerfeld量子化条件，并计算了若干具体问题的能级，包括中心势情况和Aharonov-Bohm势加中心势情况。     

T-C模型中虚光子过程对光场压缩效应的影响

利用全量子理论,研究非旋波近似下TC模型中受激场的压缩效应.结果表明:非旋波近似下,由于虚光场的影响,Q的演化曲线出现了“小锯齿状”,表现为系统的量子噪声,随着ω和n的增大,量子噪声分别减小和增大,虚光子过程使光场的压缩程度明显加深;研究结果还揭示了原子场耦合系数λ及原子间耦合系数g与光场压缩效应的关系. 关键词： T-C模型 非旋波近似 压缩效应 量子噪声     

一维粗糙面散射的射线追踪法研究

在考虑遮蔽效应的情况下,应用射线追踪法对一维导体和介质的高斯粗糙面的散射系数进行了研究,并分别计算了考虑一次反射和二次反射的散射系数。同时,利用蒙特卡罗法生成一维高斯粗糙面,计算了考虑一次、二次反射和遮蔽时不同均方根斜率粗糙面的平均散射系数。     

An energy-transport model for semiconductors derived from the Boltzmann equation

An energy-transport model is rigorously derived from the Boltzmann transport equation of semiconductors under the hypothesis that the energy gain or loss of the electrons by the phonon collisions is weak. Retaining at leading order electron-electron collisions and elastic collisions (i.e., impurity scattering and the elastic part of phonon collisions), a rigorous diffusion limit of the Boltzmann equation can be carried over, which leads to a set of diffusion equations for the electron density and temperature. The derivation is given in both the degenerate and nondegenerate cases.     

(e, 2e) triple differential cross section for ionization-excitation of helium

Simultaneous ionization and excitation of helium by electron impact is considered in an improved second Born approximation. The wave function of the low energy ejected electron is obtained in the field of residual He⁺ ion in 2s-state. The calculation has been done for the processe ⁻+He→e ⁻+He⁺(2s)+e ⁻ in the coplanar asymmetric geometry with Hartree-Fock wave function of Byron and Joachain for the helium ground state and the results are compared with the absolute experimental data of Dupreet al [J. Phys. B25, 259 (1992)] at ∼ 5.5 keV incident energy. Our results are found to increase the ratio of the recoil peak to binary peak intensity by about 30% over the first Born results and thus to bring it closer to the experimental data.