新型热中子敏感微通道板探测效率的蒙特-卡罗模拟研究

基于microchannel plates (MCP)的中子探测技术近年来发展迅速, 因其具有较高的空间分辨率和中子探测效率以及优异的时间分辨能力, 可用于高分辨率中子照相和能量选择中子成像. 本文利用蒙特-卡罗(MC)程序, 对栅格为15 μm的热中子敏感MCP板进行MC模拟计算, 获得了不同几何结构和材料组成情况下, 掺杂型和镀膜型热中子敏感MCP板的探测效率. 计算结果表明, 增加中子敏感材料的比例可以获得更高的中子阻挡效率, 但同时也加大了次级粒子发射进入MCP板通道的难度, 掺杂型MCP 板的通道直径和镀膜型MCP板的镀膜厚度均存在最优值. MCP板厚度为0.4 mm时, 对¹⁰B₂O₃材料, 掺杂型MCP板的热中子探测效率可以超过40%, 镀膜型MCP板的热中子探测效率可以接近60%.     

自抗扰控制器在位置伺服系统中的参数整定及仿真应用

本文基于MATLAB/Simulink软件设计了自抗扰控制器,结合永磁同步电机控制系统各模块结构,实现了位置伺服系统的闭环仿真,利用仿真输出及时间、参数值绘制三维图象,通过对图象的分析验证了参数整定的新方法,实现了自抗扰控制器的参数整定。通过自抗扰和PI控制器的多组实验,对比了两种控制器在恒值、正弦、斜坡等给定输入下的跟踪效果,突出了自抗扰控制器的优势。最后,本文分析了自抗扰控制器的发展趋势,为自抗扰算法的进一步应用提供一定依据。     

Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Based on the BL09 terminal of China Spallation Neutron Source (CSNS), single event upset (SEU) cross sections of 14 nm fin field-effect transistor (FinFET) and 65 nm quad data rate (QDR) static random-access memories (SRAMs) are obtained under different incident directions of neutrons: front, back and side. It is found that, for both technology nodes, the "worst direction" corresponds to the case that neutrons traverse package and metallization before reaching the sensitive volume. The SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident directions. While for multiple-cell upset (MCU) sensitivity, side incidence is the worst direction, with the highest MCU ratio. The largest MCU for the 14 nm FinFET SRAM involves 8 bits. Monte-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.     

Monte-Carlo simulation of a compact gamma-ray detector using wavelength-shifting fibers coupled to a YAP scintillation crystal

The production and transportation of fluorescent light produced in wavelength-shifting fibers (WSFs) coupled to YAP scintillation crystal is simulated using the GEANT4 codes. An advantage of the wavelength-shifting fiber readout technique over a direct readout with a position-sensitive photo-sensor is the reduced requirement for position sensitive photomultiplier tube photocathode area. With this gamma-ray detector, the gamma camera is small and flexible and has larger effective field of view and low cost. Simulation results show that a) a mean 12 of photons per 59.5 keV gamma ray interaction is produced in the WSF located nearest to the incident gamma ray, and a spatial resolution of 3.6 mm FWHM is obtained, b) a mean 27 of photons per 140 keV gamma ray interaction is produced and a spatial resolution of 3.1 mm FWHM is obtained. Results demonstrate the feasibility of this concept of a compact gamma-ray detector based on wavelength-shifting fibers readout. However, since the very low photoelectron levels, it is very important to use a photon counting device with good single photo-electron response to readout the WSFs.     

定量中子数字成像散射校正的蒙特卡罗模拟

 中子数字成像过程中,散射中子可降低像质致使提取样品的定量信息变得困难。针对该情况,分析了中子微光成像系统图像散射降质的原理,采用点扩展函数的叠加来表征散射中子引起图像降质的过程,借助于蒙特卡罗方法（MC）对点扩展函数进行模拟和建模,将点扩展函数描述为样品厚度以及样品到探测器距离为参量的解析函数,研究了点扩展函数的计算方法。研究结果表明,借助于MC方法构建系统的点扩展函数之解析函数,并利用该函数对中子图像进行散射校正,是一种行之有效的定量中子数字成像散射校正方法。     

超薄膜生长的Monte Carlo模拟研究

利用Monte Carlo(MC)方法模拟研究了薄膜生长的初始阶段岛的形貌和岛的尺寸与基底温度和入射粒子剩余能量之间的关系.模型中考虑了粒子的沉积、吸附粒子的扩散和蒸发等过程.结果表明当基底温度从200K变化到260K时,岛的形貌经历了一个从分散生长逐渐过渡到分形生长的过程,并且在较低温度(200K)下,随入射粒子剩余能量的增加,岛的形貌也经历了同样的变化过程.进一步研究证明,随着基底温度的升高或入射粒子剩余能量的增加,沉积粒子的扩散能力显著增强,从而使岛的形貌发生了改变.     

利用蒙特卡洛法分析红外光学系统的杂散辐射

介绍了杂散辐射的概念及其对光学系统成像质量的影响。以一透视式红外系统为例,通过对系统的光机结构的合理简化,利用杂散辐射分析软件Light tools中已有的蒙特卡洛分析方法,对已建立的红外系统光机结构的三维模型进行光线追迹分析,得到了系统像面的照度分布结果。同时,基于辐射度学相关理论对该系统中各结构表面的热辐射进行了定量计算,分析了结构中不同组成部分对系统像面的杂散辐射影响,提出本文系统中前镜框内表面为主要杂散辐射源。针对分析结果,探讨了红外系统的杂散辐射抑制方法,提出的方法可为后续设计提供参考。     

New approach and analysis of the generalized constant elasticity of variance model

Generally, it is well known that the constant elasticity of variance (CEV) model fails to capture the empirical results verifying that the implied volatility of equity options displays smile and skew curves at the same time. In this study, to overcome the limitation of the CEV model, we introduce a new model, which is a generalization of the CEV model, and show that it can capture the smile and skew effects of implied volatility. Using an asymptotic analysis for two small parameters that determine the volatility shape, we obtain approximated solutions for option prices in the extended model. In addition, we demonstrate the stability of the solution for the expansion of the option price. Furthermore, we show the convergence rate of the solutions in Monte-Carlo simulation and compare our model with the CEV, Heston, and other extended stochastic volatility models to verify its flexibility and efficiency compared with these other models when fitting option data from the S&P 500 index.