Theoretical study of the Ni growth on Pt stepped surfaces

We have investigated the growth of Ni on Pt stepped surfaces with (1 1 1) terraces by means of potentials derived from the second moment approximation in a tight-binding model. The activation energies associated to these processes are determined. The Schwoebel barriers of Ni atoms descending steps of Pt stepped surfaces are calculated for different kinds of straight steps (A and B steps) differing by the orientation of the ledge. In addition, we study the diffusion of Ni adatoms at fcc or hcp sites in the presence of small adislands on the terraces, in the vicinity of the A and B steps. We show that a good estimate of the potential wells and diffusion barriers could be given by introducing a lateral effective pair interaction model, the interactions extending up to the next nearest neighbors. Finally, we have carried out Kinetic Monte-Carlo simulations to investigate the Ni wire formation at Pt step edges and the influence of the exchange processes in the alloy formation.     

磁场对水系统内能影响的MC计算机模拟方法研究

用Monte-Carlo计算机模拟方法,通过对一个含有64个水分子的三维体系在磁场作用时内能变化的计算,定量评估了磁场强度及温度对磁处理效应的影响。研究发现:水的内能与外加磁场强度的关系曲线是一条多极值曲线;水-水径向分布函数伴峰的高度与磁感应强度也具有多极值特征;计算机模拟结果与实验结果基本一致,计算机模拟确实是从分子水平研究磁处理机理的有效方法。     

Multivariate sequential point estimation

For a multivariate normal distribution with unknown mean vector and unknown dispersion matrix, a sequential procedure for estimating the unknown mean vector is suggested. The procedure is shown to be asymptotically “risk efficient” in the sense of Starr (Ann. Math. Statist. (1966), 1173–1185), and the asymptotic order of the “regret” (see Starr and Woodroofe, Proc. Nat. Acad. Sci. 63 (1969), 285–288) is given. Moderate sample behaviour of the procedure using Monte-Carlo techniques is also studied. Finally, the asymptotic normality of the stopping time is proved.     

Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Based on the BL09 terminal of China Spallation Neutron Source (CSNS), single event upset (SEU) cross sections of 14 nm fin field-effect transistor (FinFET) and 65 nm quad data rate (QDR) static random-access memories (SRAMs) are obtained under different incident directions of neutrons: front, back and side. It is found that, for both technology nodes, the "worst direction" corresponds to the case that neutrons traverse package and metallization before reaching the sensitive volume. The SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident directions. While for multiple-cell upset (MCU) sensitivity, side incidence is the worst direction, with the highest MCU ratio. The largest MCU for the 14 nm FinFET SRAM involves 8 bits. Monte-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.     

The Penna model for biological ageing on a lattice: spatial consequences of child-care

We introduce a square lattice into the Penna bit-string model for biological ageing and study the evolution of the spatial distribution of the population considering different strategies of child-care. Two of the strategies are related to the movements of a whole family on the lattice: in one case the mother cannot move if she has any child younger than a given age, and in the other case if she moves, she brings these young children with her. A stronger condition has also been added to the second case, considering that young children die with a higher probability if their mothers die, this probability decreasing with age. We show that a highly non uniform occupation can be obtained when child-care is considered, even for an uniform initial occupation per site. We also compare the standard survival rate of the model with that obtained when the spacial lattice is considered (without any kind of child-care). Received 30 October 1998 and Received in final form 27 November 1998     

自抗扰控制器在位置伺服系统中的参数整定及仿真应用

本文基于MATLAB/Simulink软件设计了自抗扰控制器,结合永磁同步电机控制系统各模块结构,实现了位置伺服系统的闭环仿真,利用仿真输出及时间、参数值绘制三维图象,通过对图象的分析验证了参数整定的新方法,实现了自抗扰控制器的参数整定。通过自抗扰和PI控制器的多组实验,对比了两种控制器在恒值、正弦、斜坡等给定输入下的跟踪效果,突出了自抗扰控制器的优势。最后,本文分析了自抗扰控制器的发展趋势,为自抗扰算法的进一步应用提供一定依据。     

欧式幂期权定价模型中参数及隐含波动率的统计特性

研究了欧式幂期权定价公式中价格的渐近无偏估计和隐含波动率估计的统计特性。利用Chaudhury M.M(1989)提出的研究欧式期极定价公式中渐近无偏估计的方法以及隐含波动率求解方法,研究了两种欧式幂型看涨期权定价公式(欧式看涨期权的价值定义分别为m ax(STα-X,0)和m ax(STα-Xa,0)中的隐含波动率的估计的统计特征、幂函数的幂指数选取以及两种幂函数期权定价公式的优劣。Monte-Carlo统计计算的模拟结果说明。幂期权定价公式中幂指数α取值应为α>0,而且欧式看涨期权的价值定义为m ax(STα-Xα,0)更为合理。     

Wrap-Around L2-Discrepancy of Random Sampling, Latin Hypercube and Uniform Designs

For comparing random designs and Latin hypercube designs, this paper con- siders a wrap-around version of the L₂-discrepancy (WD). The theoretical expectation and variance of this discrepancy are derived for these two designs. The expectation and variance of Latin hypercube designs are significantly lower than those of the corresponding random designs. We also study construction of the uniform design under the WD and show that one-dimensional uniform design under this discrepancy can be any set of equidistant points. For high dimensional uniform designs we apply the threshold accepting heuristic for finding low discrepancy designs. We also show that the conjecture proposed by K. T. Fang, D. K. J. Lin, P. Winker, and Y. Zhang (2000, Technometrics) is true under the WD when the design is complete.     

一类特殊的椭圆型问题的高效蒙特卡罗算法

针对求一类特殊的椭圆型问题在任意点的数值解问题,本文在把有限元方法与蒙 特卡罗方法相结合的基础上提出了一种新的高效蒙特卡罗算法,并用算例说明了该方法 的优越性.     

On probabilistic results for the discrepancy of a hybrid-Monte Carlo sequence

In many applications it has been observed that hybrid-Monte Carlo sequences perform better than Monte Carlo and quasi-Monte Carlo sequences, especially in difficult problems. For a mixed s$s$-dimensional sequence m$m$, whose elements are vectors obtained by concatenating d$d$-dimensional vectors from a low-discrepancy sequence q$q$ with (s−d)$(s-d)$-dimensional random vectors, probabilistic upper bounds for its star discrepancy have been provided. In a paper of G. Ökten, B. Tuffin and V. Burago [G. Ökten, B. Tuffin, V. Burago, J. Complexity 22 (2006), 435–458] it was shown that for arbitrary ε>0$\epsilon >0$ the difference of the star discrepancies of the first N$N$ points of m$m$ and q$q$ is bounded by ε$\epsilon$ with probability at least 1−2exp(−ε²N/2)$1-2exp(-{\epsilon }^{2}N/2)$ for N$N$ sufficiently large. The authors did not study how large N$N$ actually has to be and if and how this actually depends on the parameters s$s$ and ε$\epsilon$. In this note we derive a lower bound for N$N$, which significantly depends on s$s$ and ε$\epsilon$. Furthermore, we provide a probabilistic bound for the difference of the star discrepancies of the first N$N$ points of m$m$ and q$q$, which holds without any restrictions on N$N$. In this sense it improves on the bound of Ökten, Tuffin and Burago and is more helpful in practice, especially for small sample sizes N$N$. We compare this bound to other known bounds.