闪光照相中散射分布均匀性的影响因素

 为了在客体密度重建过程中采用迭代法扣除散射X射线的影响,提出了以散射分布均匀为主要目的的闪光照相系统设计思想。在介绍散射分布均匀性定义的基础上,分析了均匀扣除散射所带来的光程差。采用蒙特卡罗方法研究了系统放大倍数、照相距离以及后防护锥到图像接收系统的距离对散射分布均匀性的影响。结果表明：后防护锥到图像接收系统的距离是影响散射分布形状和散射照射量大小的一个主要因素;当后防护锥到图像接收系统的距离为55 cm左右时,散射分布均匀性近似最佳,而且照相距离越大,散射分布均匀性越好。这些研究结果可用于实际闪光照相系统的优化设计,在图像接收系统的响应范围内达到使散射分布均匀和降低光源模糊影响的目的。     

Towards Quantum Control with Advanced Quantum Computing: A Perspective

We propose the combination of digital quantum simulation and variational quantum algorithms as an alternative approach to numerical methods for solving quantum control problems. As a hybrid quantum–classical framework, it provides an efficient simulation of quantum dynamics compared to classical algorithms, exploiting the previous achievements in digital quantum simulation. We analyze the trainability and the performance of such algorithms based on our preliminary works. We show that specific quantum control problems, e.g., finding the switching time for bang-bang control or the digital quantum annealing schedule, can already be studied in the noisy intermediate-scale quantum era. We foresee that these algorithms will contribute even more to quantum control of high precision if the hardware for experimental implementation is developed to the next level.     

Effect of incomplete thermal accommodation on intensive subsonic gas condensation

The direct Monte Carlo simulation method is used for investigating the effect of the thermal accommodation coefficient α _E on the relation for the Knudsen layer in the presence of intensive subsonic condensation. It is shown that the deviation of α _E from unity may significantly affect the flow parameters, in particular, M_lim, the Mach number value limiting for subsonic condensation. It is shown that a decrease in α _E leads to an increase in M_lim (M_lim < 1) if the relative flow temperature (ratio of the outer Knudsen layer boundary to the surface temperature) T < 1 and to a decrease in M_lim if T > 1. It is shown that for mirror reflection of molecules from the surface this effect may intensify.     

Phase behavior and interfacial properties of diblock copolymer-homopolymer ternary mixtures: Influence of volume fraction of copolymers and interaction energy

We use a Monte Carlo method to study the phase and interfacial behaviors of A-b-B diblocks in a blend of homopolymers, A and B, which are confined between two asymmetric hard and impenetrable walls. Our results show that, when the interaction strength is weak, the block copolymersare uniformly distributed in the ternary mixtures under considered concentrations. Under strong interaction strength, distribution region of the block copolymers changes from a single smooth interface to a curved interface or multi-layer interface in the ternary mixtures. Furthermore, our findings show that with increasing volume fraction of A-b-B diblock copolymer(фC), copolymer profiles broaden while фC≥ 0.4, a lamellar phase is formed and by further increasing фC, more thinner layers are observed. Moreover, the results show that, with the increase of фC, the phase interface first gradually transforms from plane to a curved surface rather than micelle or lamellar phase while with the increase of the interaction between A and B segments(ε_(AB)), the copolymer chains not only get stretched in the direction perpendicular to the interface, but also are oriented. The simulations also revealthat the difference between symmetric and asymmetric copolymers is negligible in statistics if the lengths of two blocksare comparable.     

群集建筑中大跨裙摆屋盖风荷载特性的数值模拟研究

以苏州太平金融大厦为工程背景,针对其大跨裙摆屋盖的风荷载作用,首先采用RNG k-ε模型模拟分析了其平均风压分布规律,以及风向变化对屋盖表面风荷载体型系数的影响;其次,引入干扰因子IF,探讨了周边建筑对大跨裙摆屋盖风荷载的气动干扰作用。结果表明:0°风向下,走廊上方屋盖两侧区域出现“上吸下顶”的叠加作用;90°风向下屋盖北侧飘带末端区域受到狭道风效应出现正压集中现象;风向变化对大跨裙摆屋盖的风荷载体型系数分布影响较大;且周围建筑物对大跨裙摆屋盖的气动干扰效应明显,主要表现为风压“遮挡效应”,而局部区域表现为风压“放大效应”。     

A reoptimized GROMOS force field for hexopyranose-based carbohydrates accounting for the relative free energies of ring conformers, anomers, epimers, hydroxymethyl rotamers, and glycosidic linkage conformers

This article presents a reoptimization of the GROMOS 53A6 force field for hexopyranose-based carbohydrates (nearly equivalent to 45A4 for pure carbohydrate systems) into a new version 56A(CARBO) (nearly equivalent to 53A6 for non-carbohydrate systems). This reoptimization was found necessary to repair a number of shortcomings of the 53A6 (45A4) parameter set and to extend the scope of the force field to properties that had not been included previously into the parameterization procedure. The new 56A(CARBO) force field is characterized by: (i) the formulation of systematic build-up rules for the automatic generation of force-field topologies over a large class of compounds including (but not restricted to) unfunctionalized polyhexopyranoses with arbritrary connectivities; (ii) the systematic use of enhanced sampling methods for inclusion of experimental thermodynamic data concerning slow or unphysical processes into the parameterization procedure; and (iii) an extensive validation against available experimental data in solution and, to a limited extent, theoretical (quantum-mechanical) data in the gas phase. At present, the 56A(CARBO) force field is restricted to compounds of the elements C, O, and H presenting single bonds only, no oxygen functions other than alcohol, ether, hemiacetal, or acetal, and no cyclic segments other than six-membered rings (separated by at least one intermediate atom). After calibration, this force field is shown to reproduce well the relative free energies of ring conformers, anomers, epimers, hydroxymethyl rotamers, and glycosidic linkage conformers. As a result, the 56A(CARBO) force field should be suitable for: (i) the characterization of the dynamics of pyranose ring conformational transitions (in simulations on the microsecond timescale); (ii) the investigation of systems where alternative ring conformations become significantly populated; (iii) the investigation of anomerization or epimerization in terms of free-energy differences; and (iv) the design of simulation approaches accelerating the anomerization process along an unphysical pathway.     

19.6nm波长类氖锗X光激光光源理论模拟

 波长19.6nm的类氖锗X光激光适合作为诊断激光等离子体界面不稳定性的光源。用经过实验检验的系列程序对预-主短脉冲驱动类氖锗进行了系统的优化设计和理论分析。采用2%~3%的预脉冲强度，6~8ns的预-主脉冲时间间隔，在4×10¹³W/cm²功率密度驱动下, 波长19.6nm增益区的宽度可以超过60μm，增益区的维持时间可以达到90ps。对于16mm长的平板靶，增益系数可达11.8/cm；弯曲靶增益系数可达13.3/cm；单靶小增益长度积可达21.3，单靶就可以获得饱和增益。采用双靶对接，其小讯号增益可达38.4，可以获得深度饱和增益，能满足应用演示所需的X光激光光源。     

Replica sub-permutation method for molecular dynamics and monte carlo simulations

We propose an improvement of the replica-exchange and replica-permutation methods, which we call the replica sub-permutation method (RSPM). Instead of considering all permutations, this method uses a new algorithm referred to as sub-permutation to perform parameter transition. The RSPM succeeds in reducing the number of combinations between replicas and parameters without the loss of sampling efficiency. For comparison, we applied the replica sub-permutation, replica-permutation, and replica-exchange methods to a β-hairpin mini protein, chignolin, in explicit water. We calculated the transition ratio and number of tunneling events in the parameter space, the number of folding–unfolding events, the autocorrelation function, and the autocorrelation time as measures of sampling efficiency. The results indicate that among the three methods, the proposed RSPM is the most efficient in both parameter and conformational spaces. © 2019 Wiley Periodicals, Inc.     

Systematic study of epitaxy growth uniformity in a specific MOCVD reactor

Gallium nitride (GaN) is a direct bandgap semiconductor widely used in bright light‐emitting diodes (LEDs). Thin‐film GaN is grown by metal‐organic chemical vapour deposition (MOCVD) technique. Reliability, efficiency and durability of LEDs are influenced critically by the quality of GaN films. In this report, a systematic study has been performed to investigate and optimize the growth process. Fluid flow, heat transfer and chemical reactions are calculated for a specific close‐coupled showerhead (CCS) MOCVD reactor. Influences of reactor dimensions and growth parameters have been examined after introducing the new conceptions of growth uniformity and growth efficiency. It is found that GaN growth rate is mainly affected by the concentration of (CH3)3Ga:NH3 on the susceptor, while growth uniformity is mainly influenced by the recirculating flows above the susceptor caused by natural convection. Effect of gas inlet temperature and the susceptor temperature over the growth rate can be explained by two competing mechanisms. High growth efficiency can be achieved by optimizing the reactor design.