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31.
This paper is a survey for development of linear distributed parameter system. At first we point out some questions existing in current study of control theory for the Lp linear system with an unbounded control operator and an unbounded observation operator, such as stabilization problem and observer theory that are closely relevant to state feedback operator. After then we survey briefly some results on relevant problems that are related to solvability of linear differential equations in general Banach space and semigroup perturbations. As a principle, we propose a concept of admissible state feedback operator for system (A, B). Finally we give an existence result of admissible state feedback operators, including semigroup generation and the equivalent conditions of admissibility of state feedback operators, for an Lp well-posed system.  相似文献   
32.
In this paper, we are interested in the regularity estimates of the nonnegative viscosity super solution of the $β$−biased infinity Laplacian equation $$∆^β_∞u = 0,$$ where $β ∈ \mathbb{R}$ is a fixed constant and $∆^β_∞u := ∆^N_∞u + β|Du|,$ which arises from the random game named biased tug-of-war. By studying directly the $β$−biased infinity Laplacian equation, we construct the appropriate exponential cones as barrier functions to establish a key estimate. Based on this estimate, we obtain the Harnack inequality, Hopf boundary point lemma, Lipschitz estimate and the Liouville property etc.  相似文献   
33.
This paper establishes a criterion for whether a -dimensional random walk on the integer lattice visits a space-time subset infinitely often or not. It is a precise analogue of Wiener's test for regularity of a boundary point with respect to the classical Dirichlet problem. The test obtained is applied to strengthen the harder half of Kolmogorov's test for the random walk.

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34.
A partial regularity theorem is established for a particular class of weak solutions to the systemu/t– div(K(u)u)=(u)¦¦2, div((u))=0 on a bounded domain inR N . Under our assumptions, (u) may exhibit exponential decay, and thus the system may be degenerate. Our proof is based upon a blow-up argument.This work was supported in part by NSF Grant DMS9424448.  相似文献   
35.
Simple fragments of transition metal 1,2-bidentate thiolates, the so-called building blocks of the general compositions ML3, ML2, ML, M(O)L2, ML2L, MLL, etc. have been proposed to constitute the di-, tri- and tetranuclear complexes concerned in this review. Structureal regularities and characteristics have been discussed and summarized according to the thiolato ligands edt and pdt, bdt and tdt, mp, and mpo, and mpp, respectively.Abbreviations H2mpo o-mercaptophenol - Hmpo 2-mercaptopyridine-N-oxide - R2dtc N,N-dialkyldithiocarbamate - Haet 2-aminoethanethiol - H2bdt o-benzenedithiol - H2pdt 1,2-propanedithiol - H2tdt toluene-3,4-dithiol - Hmpp-mppH bis-(3-hydroxy-2-pyridyl)disulfide - Hmp-mpH bis-(2-oxyphenyl)disulfide - H2edt 1,2-ethanedithiol - dppe 1,2-bis(diphenylphosphino)ethane - H2tedt 3,4,5,6-tetrachlorobenzene-1,2-dithiol - H2tpdt 3-thiapentane-1,5-dithiol - H2mnt maleonitriledithiol - Him imidazole - Bz benzyl - py pyridine  相似文献   
36.
The etch rate ofn-type Si in diluted HF solutions was investigated as a function of the bias voltage applied to the Si/electrolyte interface in the dark and under illumination. It was observed that the etch rate depends very sensitively on the minority carrier flow through this interface. For an illumination intensity of 5.3×1016 photons/cm2 s (=550nm) and the depleted Si/electrolyte interface biased slightly (less than 1 V) in reverse, the etch rate is increased by a factor of more than 1000 as compared to the etch rate under open-circuit condition. This effect can be used to create etch patterns during device processing without prior masking the semiconductors. Using the same effect it should be possible to trim the thickness of Si layers on (semi-) insulating substrates for the fabrication of enhancement-mode FETs.  相似文献   
37.
Under high pressure, some materials form electrides, with valence electrons separated from all atoms and occupying interstitial regions. This is often accompanied by semiconducting or insulating behavior. The interstitial quasiatoms (ISQ) that characterize some high pressure electrides have been postulated to show some of the chemical features of atoms, including the potential of forming covalent bonds. It is argued that in the observed high‐pressure semiconducting Li phase (oC40, Aba2), an example of such quasimolecules is realized. The theoretical evaluation of electron density, electron localization function, Wannier orbitals, and bond indices forms the evidence for covalently bonded ISQ pairs in this material. The quasimolecule concept thus provides a simple chemical perspective on the unusual insulating behavior of such materials, complementing the physical picture previously presented where the global crystal symmetry of the system plays the major role.  相似文献   
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