Deposition conditions in tailoring the morphology of highly porous reticular films prepared by electrostatic spray deposition (ESD) technique

Spongy-like reticular structure is a unique morphology fabricated by electrostatic spray deposition (ESD) technique. The effects of solvent, substrate temperature, precursor feeding rate, static electric field strength, and deposition time on tailoring the reticular structure were investigated. Scanning electron microscopy was used to observe the film morphology. MnO_x or LiMn₂O₄ were selected as the model materials. It is found that in addition to the conventional solvent butyl carbitol, other kinds of solvents such as ethylene glycol and propylene glycol can also be used to obtain reticular films at a suitable substrate temperature. Porous films with a low cross-linking degree pore structure can be prepared by increasing precursor feeding rate or decreasing substrate temperature. Increasing the deposition time or the electric field strength helps to obtain reticular films with more homogeneous pore size distribution. In addition, the addition of a high boiling-point solvent in mixed alcohol solvent results in the increase of proper substrate temperature. It is concluded that the fluidity of the spray droplets on the surface of a hot substrate is an important factor to form a reticular film.     

Nanophotonics and nanometrology with planar X-ray waveguide-resonator

The mechanism of X-ray waveguide-resonance propagation or the radiation superstream model, which can become the ground of X-ray nanophotonics, is discussed briefly. Some attention is devoted to features consideration of the simplest devices characterized by the waveguide-resonance transportation of X-ray beams. The experimental data showing the user possibilities of a simplest waveguide-resonators application for diffractometry are presented. We discuss the main reasons to improve the metrological characteristics for total reflection X-ray fluorescence (TXRF) analytical method in case when the target exciting beam is formed by a waveguide-resonator. Some problems appearing during the waveguide-resonator application are formulated.     

外电场作用下FO分子的特性研究

采用密度泛函的B3P86方法,以6-311+G(3df)为基函数优化得到不同外电场下FO基态分子的稳定几何结构、键长、总能量、HOMO能级、LUMO能级、费米能级、能隙、红外光谱和谐振频率.结果表明,分子结构与外电场有着强烈的依赖关系,且对电场方向的依赖呈现出不对称性;随着正向电场的增大,HOMO能级、LUMO能级和费米能级是减小的,能隙是先增大后减小;红外光谱和谐振频率是增大的,而频率间隔是不断减小的.     

新型风成像干涉仪温度补偿理论研究

简述了高层大气风场被动式遥感探测的基本原理;论述了新型风成像干涉仪宽场、消色差、温度补偿理论,针对目前国际上采用的风成像干涉仪补偿方法的不足,从理论上进行了分析与讨论,给出了四层介质的优化补偿理论和方案.模拟结果表明,该补偿可完全理想地消去单色光的温差,且复色光的温差补偿要比现有的方法提高1—2个量级.该研究为设计宽场、消色差、温度补偿的新型风成像干涉仪和提高风场探测精度提供了重要的理论依据和实践指导.     

基于有限元法分析宝石级金刚石的合成腔体温度场

以有限元法为理论分析手段模拟分析了温度梯度法合成宝石级金刚石大单晶的腔体温度场,实现了对宝石级金刚石的合成腔体内各位置温度同时测量.模拟结果表明:在宝石级金刚石合成过程中,其温度分布呈不均匀分布.腔体内高温区分布在样品(碳源+触媒)边缘,低温区分布在籽晶附近.样品腔内热量的传递方式和样品腔内的碳源输运方式相同,均由碳源的两侧向籽晶附近传输.籽晶附近轴向温度梯度大于径向温度梯度,导致单位时间内其轴向生长尺寸大于径向生长尺寸.宝石级金刚石腔体温度场分析的理论模型的成功构建,为新型宝石级金刚石腔体的研制提供了良好的设计基础,对促进优质宝石级金刚石的生长技术具有指导意义.     

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

Roles of blocking layer and anode bias in processes of impurity-band transition and transport for GaAs-based blocked-impurity-band detectors

Recently, GaAs-based BIB detector has attracted a lot of attention in the area of THz photovoltaic detection due to potential application values in security check and drug inspection. However, the physical mechanisms involving in carrier transition and transport are still unclear due to the poor material quality and immature processing technique. In this paper, the dark current and THz response characteristics have thus been numerically studied for GaAs-based blocked-impurity-band (BIB) detectors. The key parameters and physical models are constructed by simultaneously considering carrier freeze-out and impurity-band broadening effects. Roles of blocking layer and anode bias in processes of impurity-band transition and transport are intensively investigated, and the results can be well explained by numerical models. It is demonstrated that the effective electric field for the detector is only located in the absorbing layer, and can determine to a large extent the magnitude of the dark current and THz response. While the blocking layer not only can suppress dark current but also can attenuate responsivity due to its electric-field modulation effect.     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Wave propagation in viscoelastic single-walled carbon nanotubes with surface effect under magnetic field based on nonlocal strain gradient theory

The governing equation of wave motion of viscoelastic SWCNTs (single-walled carbon nanotubes) with surface effect under magnetic field is formulated on the basis of the nonlocal strain gradient theory. Based on the formulated equation of wave motion, the closed-form dispersion relation between the wave frequency (or phase velocity) and the wave number is derived. It is found that the size-dependent effects on the phase velocity may be ignored at low wave numbers, however, is significant at high wave numbers. Phase velocity can increase by decreasing damping or increasing the intensity of magnetic field. The damping ratio considering surface effect is larger than that without considering surface effect. Damping ratio can increase by increasing damping, increasing wave number, or decreasing the intensity of magnetic field.     

The effect of hydrostatic pressure,temperature and magnetic field on the nonlinear optical properties of asymmetrical Gaussian potential quantum wells

In this study, simultaneous effects of hydrostatic pressure, temperature and magnetic field on the linear and nonlinear intersubband optical absorption coefficients (OACs) and refractive index changes (RICs) in asymmetrical Gaussian potential quantum wells (QWs) are theoretically investigated within the framework of the compact-density-matrix approach and iterative method. The energy eigenvalues and their corresponding eigenfunctions of the system are calculated with the differential method. Our results show that the position and the magnitude of the resonant peaks of the nonlinear OACs and RICs depend strongly on the hydrostatic pressure, temperature and external magnetic field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.