电子磁矩对同步辐射频谱的修正

本文从偶极子辐射场的Heaviside-Feynman表达式出发, 用经典的电动力学方法推导了考虑内禀磁矩影响后的相对论电子辐射频谱分布的表达式, 并对做匀速圆周运动的极端相对论性电子的同步辐射, 计算了两个偏振方向上的考虑磁矩修正后的辐射谱. 计算结果表明对于特征频率为ω_c的同步辐射, 如果ħω_c≥10 keV, 内禀磁矩对辐射的修正是可观的. 通过同步辐射的内禀磁矩修正, 本文讨论了电子束极化度与辐射场偏振度的依赖关系, 并基于此关系提出一种测量电子束极化度的新方法. 关键词： 同步辐射 电子内禀磁矩 同步辐射偏振度 束流极化度     

膨胀石墨 3 mm波消光数值计算

为探讨膨胀石墨作为3 mm波干扰材料的消光、散射特性及其影响因素, 基于有限长度、有限电导率圆柱状导体的电磁散射, 利用矩量法建立了膨胀石墨的消光、散射、吸收及后向散射截面(雷达散射截面RCS)的计算式. 运用Mathematica编程计算并分析了膨胀石墨长度、半径、电导率、磁导率等因素与膨胀石墨消光、散射、吸收截面及RCS的关系. 结果表明: 当膨胀石墨的长度为1.5 mm、半径为0.05 mm时, 具有较好的消光、散射效果; 适当增大膨胀石墨的电导率、磁导率, 有利于提高其消光、散射能力. 本研究为探索增强膨胀石墨干扰3 mm波效果的技术途径提供了有价值的参考.关键词：膨胀石墨石墨层间化合物消光截面矩量法     

高次柱面反射型太阳能聚光镜的光学设计

提出了一种新型高效太阳能聚光镜, 这种聚光镜用一组特定系数, a₂, a₄, a₆, a₈, a₁₀, a₁₂, a₁₄, a₁₆ 与 C的高次柱面内壁的一部分作为反射镜. 利用高次柱面方程和光反射定律, 推导出了在高次柱面内壁上太阳反射光束的方向矢量与高次柱面系数C, a₂,a₄, a₆, a₈, a₁₀, a₁₂, a₁₄, a₁₆的关系, 通过优化设计这些系数, 可以使入射到高次柱面内壁上的太阳光束反射后全部聚焦在一条与柱面母线平行的宽度很窄的线段上, 形成线聚光. 这组特定系数用粒子群优化算法求得, 并经计算机模拟证明其聚焦效果. 用这组特定系数的高次柱面作为聚光镜, 其对光的压缩比可达148倍, 其线性光斑可作为一种强光源或高温光源. 高次柱面反射镜可由金属或玻璃直接磨制而成, 也可由高次柱面骨架和铺设在骨架上的镀铝聚酯薄膜构成. 关键词： 太阳能聚光镜 高次柱面 多项式系数优化 线性聚焦     

Pigment identification and decoration analysis of a 5th century Chinese lacquer painting screen: a micro‐Raman and FTIR study

To investigate the pigments and decoration applied to a wood‐based lacquer painting screen from the tomb of Si‐ma Jin‐long, Shanxi Province, central China, made by Chinese craftsmen in the 5th century, a combination of micro‐Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), wavelength dispersive X‐ray fluorescence (WDXRF), and microscopic examination was used. The obtained results are as follows: (1) the black, yellow, and red colors are identified as carbon black, orpiment and realgar, and cinnabar, respectively, by using micro‐Raman spectroscopy. The FTIR result shows that the white pigment filled in the leaves is not lead white, as assumed in the literature, but gypsum. Whether lead white was used at other locations remains unanswered and requires more samples for further work; (2) the thickness of each discernable pigment layer, as observed under the microscope, is approximately equal and the differences among them are small, suggesting a superfine painting skill; besides, a noticeable smooth interface between wood and the red grounding substance indicates that a polishing process might have been applied before the painting; (3) the red background was proved to contain cinnabar, but further FTIR analyses found no evidence for the presence of Chinese wood oil; and (4) the most interesting finding, rarely reported before, is that white grains of different sizes are found in both pigment layers and the grounding substance, which are perhaps an intentional addition. Further, in situ XRF and Raman analyses indicate that they are sourced from hydroxyapatite, coming probably from the intentional addition of animal bone ash to the lacquer. But how such a process could be finished and what purpose it served have not yet been answered. Copyright © 2009 John Wiley & Sons, Ltd.     

A Practical Algorithm for Determining the Optimal Pseudo-Boundary in the Method of Fundamental Solutions

One of the main difficulties in the application of the method of fundamental solutions (MFS) is the determination of the position of the pseudo-boundary on which are placed the singularities in terms of which the approximation is expressed. In this work, we propose a simple practical algorithm for determining an estimate of the pseudo-boundary which yields the most accurate MFS approximation when the method is applied to certain boundary value problems. Several numerical examples are provided.     

双频氦氖激光回馈位移测量系统的实验与应用研究

研究了一种全新的纳米尺度位移测量系统。将双折射元件插入He-Ne激光器谐振腔内产生频率分裂效应，使原本单模谐振的激光器输出变成了频差可调的2个正交偏振频率（o光和e光），而形成双频激光器。在激光谐振腔外放置沿激光轴线位移的反射表面，将输出的激光束反射回腔内，以便对激光的光强进行调制，可实现高分辨率非接触式可判向位移测量。提出了一种细分方法，该方法突破了传统干涉系统的衍射极限（1/2波长）。对于633nm波长He-Ne激光，本系统的理想分辨率为1/8波长（约为79nm）。     

Systematic Study on the Superdeformed Bands of Double Odd Nuclei in A～130 Region

Properties of the superdeformed bands of odd-odd nuclei in A～130 mass region are investigated systematically within the supersymmetry scheme including many-body interactions and a perturbation possessing the SO(5) (or SU(5)) symmetry on the rotational symmetry. The obtained γ-ray energies, the dynamical moments of inertia, and energy differences △Eγ - △Eγ^ref agree wlth experimental data. It shows that this approach is quite powerful in describing odd-odd nuclei in 130 mass region.     

Radiation damage in Si photodiodes by high-temperature irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing sample temperature during irradiation. For a 250°C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures. Carbon-related complex as hole capture levels is also mainly responsible for the device degradation for high-temperature neutron irradiation.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

双轴晶体会聚偏光干涉的理论与实验研究

晶体会聚偏光干涉图包含了晶体特性的许多信息,建立偏光干涉图的定量分析方法可以使这些信息得到充分利用。基于双轴晶体折射时满足的波矢关系,导出了两折射光波相位差的精确计算公式。分析了光波在各界面折射时偏振态的变化,提出了会聚偏光干涉合成振幅的计算方法。针对任意取向的双轴晶体,计算了完整的偏光干涉图,反映了相位分布决定等色线、振幅分布决定消光影的规律。用数字图像模似了干涉图,并讨论了干涉图的变化情况。对4块不同取向的KTP晶片进行实验,实验干涉图与理论干涉图的特征完全一致,两者仔细对比可判断现有KTP晶体色散方程的优劣。