High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two-stage diamond anvil with 300?µm culet and with a CVD diamond second stage of 50?µm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86?GPa. The micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86?GPa.     

Development of a Simple and Fast Electrochemical Method for Screening and Stoichiometric Determination of Dimenhydrinate

Dimenhydrinate (DIM) is a salt composed by the combination of two active pharmaceutical ingredients: diphenhydramine (DIP) and 8‐chlorotheophylline (CTP). In this work, the use of batch injection analysis with multiple pulse amperometric detection (BIA‐MPA) was proposed for the first time for fast stoichiometric determination of DIM. DIP (cation) and CTP (anion) were determined simultaneously in pharmaceutical samples with a simple and fast injection procedure (70 injections h^?1). Additional strategies were also proposed for rapid screening of samples containing the DIM salt. By a simple injection of a sample into the BIA system (without using of calibration curve), reliable information about stoichiometry of the DIM salt (1 : 1; DIP:CTP) and presence or absence of interfering species (electroactive) can be achieved.     

Observing High‐Pressure Chemistry in Graphene Bubbles

Using IR spectroscopy, high‐pressure reactions of molecules were observed in liquids entrapped by graphene nanobubbles formed at the graphene–diamond interface. Nanobubbles formed on graphene as a result of thermally induced bonding of its edges with diamond are highly impermeable, thus providing a good sealing of solvents within. Owing to the optical transparency of graphene and diamond, high‐pressure chemical reactions within the bubbles can be probed with vibrational spectroscopy. By monitoring the conformational changes of pressure‐sensitive molecules, the pressure within the nanobubble can be calibrated as a function of temperature and it is about 1 GPa at 600 K. The polymerization of buckministerfullerene (C₆₀), which is symmetrically forbidden under ambient conditions, is observed to proceed in well‐defined stages in the pressurized nanobubbles.     

Diamond: Electronic Ground State of Carbon at Temperatures Approaching 0 K

The relative stability of graphite and diamond is revisited with hybrid density functional theory calculations. The electronic energy of diamond is computed to be more negative by 1.1 kJ mol^?1 than that of graphite at T=0 K and in the absence of external pressure. Graphite gains thermodynamic stability over diamond at 298 K only because of the differences in the zero‐point energy, specific heat, and entropy terms for both polymorphs.     

电感耦合等离子体原子发射光谱法测定人造金刚石中铁、钴、锰、镍

1引言近年来,我国人造金刚石的产量和应用有了很大的发展。以现有的人造金刚石合成技术,通常以Fe,Ni,Co,Mn等元素组成的合金作为触媒,这使人造金刚石中极易残留这些金属组成的包裹体。诸多研究表明,包裹体含量和分布情况对人造金刚石的性能有着重要影响[1]。经查阅文献,已有使用X射线荧光光谱法对人造金刚石中杂质元素含量进行半定量分析的报道[2]。电感耦合等离子体发射光谱法(ICP-AES)被广泛应用于岩矿、土壤样品中多元素分析[3]。本实验以在大气气氛中高温灰化和混合酸对样品进行前处理,采用ICP-AES测定人造金刚石中Fe,Co,Ni和Mn。本方法操作简便,处理效果良好。     

顽火辉石的高温高压同步辐射研究

 采用同步辐射能量色散X射线衍射技术、激光加热技术和金刚石对顶砧（DAC）高压装置,在温度为2 000 K和压力为23 GPa的范围内,对采自地幔二辉橄榄岩中的顽火斜方辉石,进行了原位的高温高压能量色散X射线衍射（EDXRD）测量。实验结果表明：当压力为15.3 GPa、温度为1 600 K时（相当于地球内部410 km处的地震波不连续界面的温压环境）,顽火斜方辉石转变为橄榄石的β相——瓦兹利石（Wadsleyite）相;继续加温加压至2 000 K、23 GPa时（相当于地球内部670 km处的地震波不连续界面的温压环境）,顽火斜方辉石相变为钛铁矿（Ilmenite）结构和钙钛矿（Perovskite）结构的混和相。实验结果进一步证明,在地幔中存在的两个地震波不连续界面是由橄榄石、顽火斜方辉石等矿物的相变引起的。     

人造金刚石合成中黑色低磁金刚石的研究

 通过对合成金刚石的原材料和合成产物——石墨、Ni₇₀Mn₂₅Co₅触媒、普通人造金刚石、黑色人造金刚石、NiMnCoC熔体的磁化率测试,以及对黑色人造金刚石和普通人造金刚石破碎断面扫描电镜的对比分析,认为黑色人造金刚石形成低磁性的原因是由于合成过程中温度偏高、压力偏低,生长的金刚石质量差、裂纹多。晶体内夹杂了很多石墨与触媒包裹体,同时金刚石表面与金刚石晶体内的触媒包裹体之间形成贯穿性的裂纹。在金刚石化学提纯处理过程中,金刚石晶体内的铁磁性触媒包裹体杂质被通过裂纹进入的酸除去。因而在检测金刚石磁性时,黑色金刚石的磁性很小,呈弱磁性。     

磨料形貌及分散介质对4H碳化硅晶片研磨质量的影响研究

研磨作为4H碳化硅(4H-SiC)晶片加工的重要工序之一,对4H-SiC衬底晶圆的质量具有重要影响。本文研究了金刚石磨料形貌和分散介质对4H-SiC晶片研磨过程中材料去除速率和面型参数的影响,基于研磨过程中金刚石磨料与4H-SiC晶片表面的接触情况,推导出简易的晶片材料去除速率模型。研究结果表明,磨料形貌显著影响4H-SiC晶片的材料去除速率,材料去除速率越高,晶片的总厚度变化(TTV)越小。由于4H-SiC中C面和Si面的各向异性,4H-SiC晶片研磨过程中C面的材料去除速率高于Si面。在分散介质的影响方面：水基体系研磨液的Zeta电位绝对值较高,磨料分散均匀,水的高导热系数有利于控制研磨过程中的盘面温度;乙二醇体系研磨液的Zeta电位绝对值小,磨料易发生团聚,增大研磨过程的磨料切入深度,晶片的材料去除速率提高,晶片最大划痕深度随之增大。     

二氧化碳对同质外延生长单晶金刚石内应力的影响

本文研究了在反应气体中引入不同浓度的CO₂对微波等离子体化学气相沉积(MPCVD)法同质外延生长单晶金刚石内应力的影响,并对其作用机理进行了分析。研究发现,随着CO₂浓度增加,单晶金刚石内应力逐渐减小,这是由于添加的CO₂提供了含氧基团,可以有效刻蚀金刚石生长过程中的非金刚石碳,并能够降低金刚石中杂质的含量,从而避免晶格畸变,减少生长缺陷,并最终表现为单晶金刚石内应力的减小,其中金刚石内应力以压应力的形式呈现。此外反应气体中加入CO₂可以降低单晶金刚石的生长速率和沉积温度,且在合适的碳氢氧原子比(5∶112∶4)下能够得到杂质少、结晶度高的单晶金刚石。     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。