Oscillations in three-reaction quadratic mass-action systems

It is known that rank-two bimolecular mass-action systems do not admit limit cycles. With a view to understanding which small mass-action systems admit oscillation, in this paper we study rank-two networks with bimolecular source complexes but allow target complexes with higher molecularities. As our goal is to find oscillatory networks of minimal size, we focus on networks with three reactions, the minimum number that is required for oscillation. However, some of our intermediate results are valid in greater generality. One key finding is that an isolated periodic orbit cannot occur in a three-reaction, trimolecular, mass-action system with bimolecular sources. In fact, we characterize all networks in this class that admit a periodic orbit; in every case, all nearby orbits are periodic too. Apart from the well-known Lotka and Ivanova reactions, we identify another network in this class that admits a center. This new network exhibits a vertical Andronov–Hopf bifurcation. Furthermore, we characterize all two-species, three-reaction, bimolecular-sourced networks that admit an Andronov–Hopf bifurcation with mass-action kinetics. These include two families of networks that admit a supercritical Andronov–Hopf bifurcation and hence a stable limit cycle. These networks necessarily have a target complex with a molecularity of at least four, and it turns out that there are exactly four such networks that are tetramolecular.     

Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Ag implantation-induced modification of Ni–Ti shape memory alloy thin films

Nanocrystalline thin films of Ni–Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120?keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni–Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni–Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni–Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (E_r) are observed for the film implanted at an optimized fluence of 9?×?10¹⁵ ions/cm². This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni–Ti thin films.     

Ab initio MRCI＋Q study on potential energy curves and spectroscopic parameters of low-lying electronic states of CS＋

Carbon monosulfide molecular ion （CS＋）, which plays an important role in various research fields, has long been attracting much interest. Because of the unstable and transient nature of CS＋, its electronic states have not been well investigated. In this paper, the electronic states of CS＋ are studied by employing the internally contracted multireference configuration interaction method, and taking into account relativistic effects （scalar plus spin–orbit coupling）. The spin–orbit coupling effects are considered via the state-interacting method with the full Breit–Pauli Hamiltonian. The potential energy curves of 18 Λ–S states correlated with the two lowest dissociation limits of CS＋ molecular ion are calculated, and those of 10 lowest Ω states generated from the 6 lowest Λ–S states are also worked out. The spectroscopic constants of the bound states are evaluated, and they are in good agreement with available experimental results and theoretical values. With the aid of analysis of Λ–S composition of Ω states at different bond lengths, the avoided crossing phenomena in the electronic states of CS＋ are illuminated. Finally, the single ionization spectra of CS （X1Σ＋） populating the CS＋（X2Σ1/2＋, A2Π3/2, A2Π1/2, and B2Σ1/2＋） states are simulated. The vertical ionization potentials for X2Σ1/2＋, A2Π3/2, A2Π1/2, and B2Σ1/2＋ states are calculated to be 11.257, 12.787, 12.827, and 15.860 eV, respectively, which are accurate compared with previous experimental results, within an error margin of 0.08 eV~0.2 eV.     

Numerical analysis of the resonance mechanism of the lumped parameter system model for acoustic mine detection

The method of numerical analysis is employed to study the resonance mechanism of the lumped parameter system model for acoustic mine detection. Based on the basic principle of the acoustic resonance technique for mine detection and the characteristics of low-frequency acoustics, the “soil-mine” system could be equivalent to a damping “mass-spring” resonance model with a lumped parameter analysis method. The dynamic simulation software, Adams, is adopted to analyze the lumped parameter system model numerically. The simulated resonance frequency and anti-resonance frequency are 151 Hz and 512 Hz respectively, basically in agreement with the published resonance frequency of 155 Hz and anti-resonance frequency of 513 Hz, which were measured in the experiment. Therefore, the technique of numerical simulation is validated to have the potential for analyzing the acoustic mine detection model quantitatively. The influences of the soil and mine parameters on the resonance characteristics of the soil–mine system could be investigated by changing the parameter setup in a flexible manner.     

Luminescence properties of green emission of SiO2/Zn2SiO4:Mn nanocomposite prepared by sol–gel method

Green light emitting Mn²⁺ doped Zn₂SiO₄ particles embedded in SiO₂ host matrix were synthesized by a sol–gel method. After the incorporation of ZnO:Mn nanoparticles in a silica monolith using sol–gel method with supercritical drying of ethyl alcohol in two steps, it was heat treated in air at 1200 °C for 2 h in order to obtain the SiO₂/α-Zn₂SiO₄:Mn nanocomposites. The microstructure of phosphor crystals was characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). XRD results indicate that the pure phase α-Zn₂SiO₄ with rhombohedral structure was obtained after thermal treatment at 1200 °C. The SiO₂/α-Zn₂SiO₄:Mn nanocomposites with a Mn doping concentration of 1.5 at% exhibit two broadband emissions in the visible range: a strong green emission at around 525 nm and a second one in the range between 560 and 608 nm. This nanocomposite with a Mn doping concentration of 0.05 shows the highest relative emission intensity. Upon 255 nm excitation, the luminescence decay time of the green emission of Zn₂SiO₄:Mn around 525 nm is 11 ms. The luminescence spectra at 525 nm (⁴T₁–⁶A₁) and lifetime of the excited state of Mn²⁺ ions-doped Zn₂SiO₄ nanocrystals are investigated.     

Facile synthesis of SnO2–ZnO core–shell nanowires for enhanced ethanol-sensing performance

The design of core–shell heteronanostructures is powerful tool to control both the gas selectivity and the sensitivity due to their hybrid properties. In this work, the SnO₂–ZnO core–shell nanowires (NWs) were fabricated via two-step process comprising the thermal evaporation of the single crystalline SnO₂ NWs core and the spray-coating of the grainy polycrystalline ZnO shell for enhanced ethanol sensing performance. The as-obtained products were investigated by X-ray diffraction, scanning electron microscopy, and photoluminescence. The ethanol gas-sensing properties of pristine SnO₂ and ZnO–SnO₂ core–shell NW sensors were studied and compared. The gas response to 500 ppm ethanol of the core–shell NW sensor increased to 33.84, which was 12.5-fold higher than that of the pristine SnO₂ NW sensor. The selectivity of the core–shell NW sensor also improved. The response to 100 ppm ethanol was about 14.1, whereas the response to 100 ppm liquefied petroleum gas, NH₃, H₂, and CO was smaller, and ranged from 2.5 to 5.3. This indicates that the core–shell heterostructures have great potential for use as gas sensing materials.     

Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study

The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS?, a 2D device simulator from Silvaco, have been used to assess the validity of the models.