Stochastic resonance in perspective

Summary We outline the historical development of stochastic resonance (SR), a phenomenon in which the signal and/or the signal-to-noise ratio in a nonlinear system increase with increasing intensity of noise. We discuss basic theoretical ideas explaining and describing SR, and we review some revealing experimental data that place SR within the wider context of statistical physics. We emphasize the close relationship of SR to some effects that are well known in condensed-matter physics. Paper presented at the International Workshop ?Fluctuations in Physics and Biology: Stochastic Resonance, Signal Processing and Related Phenomena?, Elba, 5–10 June 1994.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。     

KNbO3：Fe晶体的时间微分效应及图像追踪

本文观察到了KNbO_3:Fe晶体的时间微分效应,并用这个微分效应进行了图像追踪的演示,为KNbO_3:Fe晶体在光折变器件领域的应用进行了有益的探索。     

A method for determining optical constants, dimensions, and concentrations of “soft” absorbing particles in the brightening band region

We investigate the possibilities of creating a method for estimating the optical constants, dimensions, and concentrations of “soft” absorbing particles by applying a theoretical analysis of the angular dependence of the intergrated indicatrix, overall characteristics of light scattering, and absorption on the phase shift and diffraction parameter of particles in the brightening band region. We show that using the investigated optical characteristics, it is possible to determine the unknown parameters of a suspension from experimental data. Institute of Biophysics, Siberian Branch of the Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 807–812, November–December, 1997.     

一维半导体的光学吸收

研究一维半导体在外电磁场中的光吸收、涉及电子带间的直接跃迁与间接跃迁，考虑了电子－空穴相互作用的激子光吸收，导出一维半导体的光吸收系数公式。     

Statistical mechanics of warm and cold unfolding in proteins

We present a statistical mechanics treatment of the stability of globular proteins which takes explicitly into account the coupling between the protein and water degrees of freedom. This allows us to describe both the cold and the warm unfolding, thus qualitatively reproducing the known thermodynamics of proteins. Received: 19 March 1998 / Revised and Accepted: 25 May 1998     

Surface effects in field-induced smectic transitions

We study the surface behavior of a semi-infinite smectogenic sample bounded by a solid wall, in the presence of an external electric field. Our analysis is performed in the framework of a Landau-de Gennes theory. For the sake of simplicity, we consider only the case in which, in the absence of field and surfaces, a direct isotropic to smectic-A transition occurs, while in the presence of the electric field a nonspontaneous nematic phase appears. Two new surface phases are identified, namely a parasmectic and a surface-induced smectic phase. The shifts in the transition temperatures and the critical behavior of the surface states are analyzed. Received: 25 August 1997 / Accepted: 23 January 1998     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Correct Evaluation of the Effect of Transverse Effective Charges on Phonons in AlAs Quantum Dots

An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near F point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities of phonon states of different irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TCs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD.