两类Kampéde Fériet级数的简化和求和公式

基于两个₃F₂-超几何级数求和公式,该文建立了两个一般的双变量级数变换公式.在经典超几何级数求和公式的帮助下,这两个变换公式变形出一系列形如F_q:1;0^p:2;1的Kampéde Fériet级数求和公式.另外,利用四个Saalschützian₄F₃ [1]-求和公式,一些形如F_q:1;1^p:2;2的Kampéde Fériet级数的简化和变换公式也被推导出来.     

关于锥拉伸与锥压缩不动点定理

本文给出Fréchet空间中集值映射的锥拉伸与锥压缩不动点定理。同时也讨论Banach空间与Hilbert空间中集值映射的相应不动点定理。并导出逼近定理作为应用。     

基于任意系统位置关系的投影云纹形貌测量技术研究

提出了一套完整的基于投影云纹系统的物体表面形貌测量方法,包括理论公式推导、系统线性近似误差分析、全场灵敏度系数标定方法、实际物体的实验测量结果。所提出的方法既不需要特定的系统硬件位置关系设置,也无需人为确定系统的几何参数。该方法在允许测量系统组件任意放置的情况下仍然能够获得很高的分辨率和精度,其有效性及正确性通过真实物体的实验得到证实。     

Electronic structure and self-assembling processes in platinum metalloporphyrins: photoemission and AFM studies

The main goal of this paper is to investigate the electronic structure of valence band and core levels as well as surface topography of pristine tetraphenylporphyrin and Pt-based compounds Pt-TPP(p-COOH₃)₄, Pt-TPP(m-OCH₃)₄, PtCl₂-TPP(m-OCH₃)₄ thin films. The electronic structure of various Pt-based metalloporphyrins which were investigated in dependence on their chemical structure and spectra were measured by high-resolution X-ray photoelectron spectroscopy (XPS) of valence band and Pt4f, Pt4d, C1s, O1s, N1s core levels. Results of atomic force microscopy (AFM) studies of topography and self-assembling processes in thin films of porphyrines are presented and discussed.     

Organic heterojunctions of layered perylene and phthalocyanine dyes: characterization with UV-photoelectron spectroscopy and luminescence quenching

We present here the characterization of organic/organic′ heterojunctions created from either of two perylene dyes, perylenetetracarboxylicdianhydride (PTCDA) or the bisimide derivative perylenetetracarboxylicdianhydride-N,N′-bis (butyl)imide (C4-PTCDI), and two chloro-metallated donor phthalocyanines (ClAlPc or ClInPc). The perylene dyes were selected to create thin films with the core of the perylene dye parallel to the substrate plane (PTCDA) or nearly vertical to the substrate plane, with layer planes defined by the butyl substituents (C4-PTCDI). We compare the frontier orbital offsets revealed by UV-photoelectron spectroscopy, and quenching of luminescence of the perylene dyes, as a function of Pc coverage. The ionization potentials (IPs) of the Pc layers, the degree to which interface dipoles are formed at the Pc/perylene dye interface, and the degree of quenching of the perylene luminescence are affected by the structure of the Pc/perylene interface. Pc/PTCDA heterojunctions show significant interface dipoles and higher IPs for the first-deposited Pc layers compared to Pc/C4-PTCDI heterojunctions, which show negligible interface dipoles and lower overall IP values for initial Pc layers. Luminescence of the selectively excited perylene layers is quenched by the addition of even submonolayer coverages of Pc. This quenching process occurs as a result of both energy transfer (perylene to Pc) and charge transfer (Pc to perylene). Luminescence from monomeric and aggregated ClAlPc and ClInPc monolayers is seen on C4-PTCDI films, whereas only luminescence from the aggregated forms of these Pcs is seen on PTCDA films. These studies reveal aspects of organic heterojunction energetics which may have important implications for organic solar cell design.     

Electronic structure of bis(benzo)pentathienoacene in gas and solid phase: ultraviolet photoemission spectroscopy and energy band calculation

Ultraviolet photoemission spectroscopic measurements of bis (benzo)pentathienoacene were carried out in gas and solid phase. For the measurements of solid phase, vacuum deposited films in both amorphous and crystalline phase were prepared on different substrates of HOPG and polycrystalline Au, respectively. The adiabatic ionization energies were determined to be 6.8₄, 5.3₂, and 5.0₈ eV, for gas, amorphous, and crystalline phases, respectively. The spectral lineshapes were interpreted with the aid of the density functional calculations for both isolated molecule and single-crystal structure. The calculated electronic structures were further analyzed in terms of the energy band dispersion and the transport properties of charge carriers.     

由时变Lévy噪声驱动的随机微分方程的平均值原理

该文讨论了一类由时变Lévy噪声驱动的随机微分方程(LSDE)的平均值原理,提出了其均值化方程,在均方和以概率意义下得到了均值化方程的解收敛到原LSDE的解,给出了一个具体例子.     

Deep levels related to transition metals in Si under hydrostatic pressure

The influence of hydrostatic pressure up to 5×10⁸ Pa on deep levels related to transition metal impurities in silicon is determined by means of an isothermal capacitance method. Under pressure, donor levels of isolated Fe, V, Ti, and Mn shift towards the valence band in contrast to earlier results for deep chalcogen donors. This behavior is contrary to what is expected by considering only effects of hybridization. Quantitative differences between Fe, Ti, V, and, on the other hand, Mn suggest a different microscopic structure of these defects. The Fe-acceptor pairs FeB, FeAl, and FeGa move towards the valence band with a rate comparable to that of the ₁ conduction band. The thermal capture coefficients of isolated Fe, V, and Ti are found to be pressure independent up to 5×10⁸ Pa.On leave from Sony Corp., Research Center, Yokohama, Japan     

基于傅里叶变换的光纤法布里-珀罗传感器解调研究

从双光束干涉的基本原理出发,分析了高斯分布光源条件下利用傅里叶变换解调光纤法布里-珀罗传感器的原理。针对高斯分布光源特点,提出直接对波长均匀采样得到的光谱数据进行快速傅里叶变换,然后利用传感器腔长与频域中峰值频率之间的关系求解传感器腔长的可行性。在此基础上,采用频谱插值技术提高了系统解调精度,并利用宽带光源和光谱仪等组成的解调系统,对所提出的方法进行了实验验证。结果表明,从实验中测得的数据与理论计算值能较好地吻合。