From nitride to carbide: control of zirconium-based hard materials film growth and their characterization

High-quality thin films of ZrC_yN_1-y and the novel tribological material Zr_0.8Al_0.2C_yN_1-y have been grown by pulsed reactive crossed-beam laser ablation using Zr and Zr–Al ablation targets, respectively, and a pulsed gas. The gas mixture provided the carbon and nitrogen for the solid-solution films. Control of the stoichiometry (i.e. y) was determined by the relative partial pressures of the nitrogen- and carbon-containing gases. It was found that optimal control of the film chemistry was achieved by using the least thermally reactive gases. In this manner, it was possible to activate the gas species exclusively by collisions in the gas phase with the ablation-plume particles, thereby decoupling the chemistry from surface processes. The films were characterized for their chemical, crystallographic, optical, and tribological properties. All the films had very low impurity levels and a cubic rock salt crystal structure over the entire investigated temperature range between 100 and 600 °C. Exceedingly high quality epitaxial films could be grown on MgO (001) at 600 °C. Films grown on stainless steel were polycrystalline. The hardness of the films showed a maximum for both sets for stoichiometries predicted by a recent theoretical model for hardness based on band-structure calculations. In addition, all the films had an exceptionally low coefficient of friction versus steel. Received: 22 August 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002     

Hopping conduction in disordered carbon nanotubes

We report electrical transport measurements on individual disordered multiwalled carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows an exp[−(T₀/T)^1/2] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T₀. The electric field dependence of low-temperature conductance behaves as exp[−(ξ₀/ξ)^1/2] at high electric field ξ at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at . Comparison with theory indicates that our data are best explained by Coulomb-gap variable-range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant.     

Electron-phonon coupling constant of cuprate based high temperature superconductors

The electron-phonon coupling constant in two-dimensional cuprate high temperature superconductors has been determined by the ultrasonic method. The electron-phonon coupling constant in the Van Hove scenario was found to increase with transition temperature T_c. is in the range of 0.025-0.060 which is 10-100 times smaller than the conventional three-dimensional Bardeen-Cooper-Schrieffer coupling constant. The characteristic Debye temperature θ_D does not correlate with T_c. These findings show that the interplay between the Debye frequency and electron-phonon coupling in the two-dimensional system and their variations have a combined effect in governing the transition temperature.     

Hyperthermal cluster-surface scattering

Using molecular-dynamics simulation, we study the processes occurring after impact of clusters on a rigid wall. Comparing the impact of model clusters consisting of 13 atoms, or of 13 diatomic molecules with varied bond strength, the systematics in the results of the collision process are investigated. Four regimes of impact-induced cluster fragmentation are identified: intact reflection, shattering into large fragments, complete fragmentation, and molecule dissociation. The effect of the number of degrees of freedom activated in the collision on the translational and internal energies of the reflected fragments is discussed in detail. As a rule, with increasing number of degrees of freedom which can be activated in the collision, the translational energy sinks. On the other hand, for weak intramolecular bonding, intramolecular vibrations are easily excited at small impact energies, reducing the resulting translational energy. The presence of even a very weak attractive well epsilon_w at the surface has a major influence on the sticking behavior of the clusters — and hence also on the absolute reflected energies — even at impact energies E₀ ≫ epsilon_w.     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

Induced Chern-Simons term of a paired electron state in the quantum Hall system

The induced Chern-Simons term for a paired electron state is calculated in the quantum Hall system by using a field theory on the von Neumann lattice. The coefficient of the Chern-Simons term, which is the Hall conductance, has not only the usual term proportional to a filling factor due to P (parity) & T (time reversal) symmetry breaking but also correction terms due to P & T & U(1) symmetry breaking. The correction term essentially comes from the Nambu-Goldstone mode and depends on an infrared limit. It is shown that the correction term is related to a topological number of a gap function in the momentum space.     

Growth of active Nd-doped YAP thin-film waveguides by laser ablation

3 (YAP) thin films as a promising material for application in a planar waveguide laser has been studied. The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambient oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were investigated. The waveguiding properties were observed and refractive index of the films was evaluated. Received: 8 February 1998/Accepted: 9 February 1998     

Conductance in normal metal/insulator/ferromagnetic superconductor tunnel junctions

In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes equation for a ferromagnetic superconductor (FS). In the framework of the Blonder-Tinkham-Klapwijk model, we present the differential conductance of the normal metal/insulator/FS junctions. It is shown that the exchange energy h in the FS can lead to the Zeeman splitting of the conductance peaks and the energy difference between the two splitting peaks is equal to 2h. The observation of such Zeeman splitting in the conductance spectrum can be taken as evidence for the coexistence between superconductivity and ferromagnetism.     

Effects of excimer-laser irradiation of LaAlO3(100) single crystals: Influence on superconducting YBa2Cu3O7-x film growth

3 (100) single crystal substrates have been investigated. Poorly absorbed KrF irradiation leads to localized, deep, and unstable damage on the crystal surfaces. By contrast ArF has been found to induce well-localized roughness and microcracks on LaAlO₃(100) surfaces at fluences between 0.2 and 1.8 J/cm². The material emission threshold was estimated at around 0.5 J/cm² and cracks appeared above 1.4 J/cm². The substrate surface state determines YBa₂Cu₃O_7-x film growth, leading to morphological changes that have been related to a decrease in adatom mobility on the substrate. The most striking feature is the drastic reduction in YBa₂Cu₃O_7-x outgrowth density inside the irradiated areas. Irradiation has little effect on film crystalline properties. The main effect on the electrical properties can be restricted to a decrease of critical current density up to a factor of 10⁴, but such an important decrease is only observed in the most intensively irradiated substrates. Received: 18 November 1996/Accepted: 12 June 1997