Computational and experimental study of the cluster size distribution in MAPLE

A combined experimental and computational study is performed to investigate the origin and characteristics of the surface features observed in SEM images of thin polymer films deposited in matrix-assisted pulsed laser evaporation (MAPLE). Analysis of high-resolution SEM images of surface morphologies of the films deposited at different fluences reveals that the mass distributions of the surface features can be well described by a power-law, Y(N) ∝ N^−t, with exponent −t ≈ −1.6. Molecular dynamic simulations of the MAPLE process predict a similar size distribution for large clusters observed in the ablation plume. A weak dependence of the cluster size distributions on fluence and target composition suggests that the power-law cluster size distribution may be a general characteristic of the ablation plume generated as a result of an explosive decomposition of a target region overheated above the limit of its thermodynamic stability. Based on the simulation results, we suggest that the ejection of large matrix-polymer clusters, followed by evaporation of the volatile matrix, is responsible for the formation of the surface features observed in the polymer films deposited in MAPLE experiments.     

Strength and failure of cemented granular matter

Cemented granular materials (CGMs) consist of densely packed solid particles and a pore-filling solid matrix sticking to the particles. We use a sub-particle lattice discretization method to investigate the particle-scale origins of strength and failure properties of CGMs. We show that jamming of the particles leads to highly inhomogeneous stress fields. The stress probability density functions are increasingly wider for a decreasing matrix volume fraction, the stresses being more and more concentrated in the interparticle contact zones with an exponential distribution as in cohesionless granular media. Under uniaxial loading, pronounced asymmetry can occur between tension and compression both in strength and in the initial stiffness as a result of the presence of bare contacts (with no matrix interposed) between the particles. Damage growth is analyzed by considering the evolution of stiffness degradation and the number of broken bonds in the particle phase. A brutal degradation appears in tension as a consequence of brittle fracture in contrast to the more progressive nature of damage growth in compression. We also carry out a detailed parametric study in order to assess the combined influence of the matrix volume fraction and particle-matrix adherence. Three regimes of crack propagation can be distinguished corresponding to no particle damage, particle abrasion and particle fragmentation, respectively. We find that particle damage scales well with the relative toughness of the particle-matrix interface with respect to the particle toughness. This relative toughness is a function of both matrix volume fraction and particle-matrix adherence and it appears therefore to be the unique control parameter governing transition from soft to hard behavior.     

Magnetic resonance imaging of acoustic streaming: absorption coefficient and acoustic field shape estimation

In this study, magnetic resonance imaging (MRI) is used to visualize acoustic streaming in liquids. A single-shot spin echo sequence (HASTE) with a saturation band perpendicular to the acoustic beam permits the acquisition of an instantaneous image of the flow due to the application of ultrasound. An average acoustic streaming velocity can be estimated from the MR images, from which the ultrasonic absorption coefficient and the bulk viscosity of different glycerol-water mixtures can be deduced. In the same way, this MRI method could be used to assess the acoustic field and time-average power of ultrasonic transducers in water (or other liquids with known physical properties), after calibration of a geometrical parameter that is dependent on the experimental setup.     

Nonlinear electro-optic characteristic in a photoexcited semiconductor

We study the transport properties of a GaAs-based Gunn device under local optical excitation via direct numerical simulation. The simulation results show that the hysteretic transition in between quenched and transit modes. The key mechanism for this kind of transition is related to the formation of a stationary and nonuniform hole profile around the notch regime. Therefore, the development of optical control of the microwave output is reported. In addition, the influence of impact ionization on this nonlinear semiconductor is also discussed in the present study.     

Anisotropy of infrared optical absorption in layered superconductors

We analyze the problem of infrared optical absorption in a clean layered London superconductor in the vicinity of the gap =2. We conclude that absorption of light with wave vectorqc is enhanced over ordinary Drude absorption (qc) due to resonance absorption (Landau damping). Experimental absorption studies with qc might therefore improve chances to observe a superconducting gap in the high-T _c superconductors.     

Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002     

Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition

Raman characteristics of carbon nitride films synthesized by nitrogen-ion-beam-assisted pulsed laser deposition were investigated. In addition to the D (disorder) band and G (graphitic) band commonly observed in carbon nitride films, two Raman bands located at 1080–1100 and 1465–1480 cm^-1 were found from our carbon nitride films. These two bands were well matched with the predicted Raman frequencies for βC₃N₄ and the observed Raman bands reported for carbon nitride films, indicating their relation to carbon-nitrogen stretching vibrations. Furthermore, the relative intensity ratio of the two Raman bands to the D and G bands increased linearly with increasing nitrogen content of the carbon nitride films. Received: 30 October 2000 / Accepted: 5 February 2001 / Published online: 2 October 2001     

Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser

High-quality ZnO thin films were grown on single-crystalline Al₂O₃(0001) and amorphous SiO₂/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al₂O₃(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO₂/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al₂O₃(0001) and SiO₂/Si(100) were 3 and 18 meV, respectively. Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001     

Distinct correlation between CeO2 and YSZ in out-of-plane and in-plane mosaic dispersions of heteroepitaxial CeO2/YSZ/Si(001) films

The structural correlations including the lattice constants and the mosaic dispersions between CeO₂ and yttria-stabilized ZrO₂ (YSZ) in CeO₂/YSZ/Si(001) heteroepitaxial films have been investigated by out-of-plane and in-plane X-ray-diffraction techniques. The distinct linear correlations of the full width at half-maximum (FWHM) of the ω scan between CeO₂ and YSZ have been found in both directions. CeO₂ always has a 0.7° lower FWHM of the ω scan than YSZ in the out-of-plane direction, but has a 2.6° higher FWHM in the in-plane direction. A possible relationship between the out-of-plane and in-plane FWHMs of the ω scans has been demonstrated with a lattice-rotation model. Besides, the lattice constants of CeO₂ are dependent on the FWHMs of the YSZ ω scans: as the FWHM is below 3.5°, CeO₂ has a tetragonal distortion, and as the FWHM is higher than 3.5°, CeO₂ exhibits a cubic structure without distortion. The results are of great interest, both for the fundamental understanding of the film-growth mechanisms and for potential applications. Received: 11 September 2000 / Accepted: 5 June 2001 / Published online: 30 August 2001