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11.
孙晓艳  张钰如  李雪春  王友年 《中国物理 B》2017,26(1):15201-015201
Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.  相似文献   
12.
为了提高圆柱体缺陷检测的准确性,需了解其超声声场分布。针对圆柱体实际检测的要求,本文采用超声水浸检测法。通过多元高斯声束模型分别模拟了实心圆柱体及空心圆柱体中的辐射声场,计算仿真了垂直入射与倾斜入射至圆柱体时的声场,实现了检测声场的可视化。通过计算得出仿真结构与实际理论相符,表明本论文的方法能够应用在圆柱体结构超声声场仿真中。  相似文献   
13.
为了实现全天候多波段远距离实时图像监控,设计了具有微光、红外和可见光融合的光学前端,对多源图像进行实时配准研究。在平行光轴的基础上,通过计算不同视场图像的成像视差,计算仿射变换需要的参数,采用双线性内插算法弥补红外在成像方面与可见光图像的差别,将红外图像的变换制作成查找表存储在图像处理器DM642中,系统通过硬件查找表可以快速实现不同图像的配准变换,实现同步视频的实时配准与融合。实验表明:该设计能够准确地实现多源图像的实时配准,系统经过图像配准、图像融合和伪彩变换处理后的时间约为24.3 ms,系统探测距离大于3 km。  相似文献   
14.
李雪春  王友年 《物理学报》2004,53(8):2666-2669
针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺,采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明:随着等离子体密度的增高,表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加,而介质的厚度对鞘层特性的影响则相对较小. 关键词: 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应  相似文献   
15.
In the first part we prove an extension of the Chern-Lashof inequality for noncompact immersed manifolds with finitely many ends. For this we give a lower bound of the total absolute curvature in terms of topological invariants of the manifold. In the second part we discuss tightness properties for such immersions. Finally, we give an upper bound for the substantial codimension.

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16.
In this paper, we present a class of functions:f:X such that inf xX f(x)= , whereX is a nonempty, finitely compact and convex set in a vector space andB x ={xX: y aff(X){x:[x, y]X={x}. Our main tool is a recent minimax theorem by Ricceri (Ref. 1).  相似文献   
17.
An analog of the minimal unitary series representations for the deformed Virasoro algebra is constructed using vertex operators of the quantum affine algebra Uq(sl2). A similar construction is proposed for the elliptic algebra Aq,p(sl2).  相似文献   
18.
We have discussed the resolution of submicron photoluminescence (PL) imaging using a solid immersion lens (SIL), which collects an evanescent light field. We apply the SIL microscope to measure PL image of a strip-line-patterned GaAs quantum well structure at low temperature. An improved resolution beyond diffraction limit and high collection efficiency of PL are realized.This paper was originally presented at the 5th International Conference on NEAR FIELD OPTICS and RELATED TECHNOLOGIES (NFO-5), which was held on December 6–10, 1998 at Coganoi Bay Hotel, Shirahama, Japan, in cooperation with the Japan Society of Applied Physics and Mombusho Grant-in Aid for Scientific Research on Priority Areas “Nearfield Nano-optics” Project, sponsored by Japan Society for the Promotion of Science.  相似文献   
19.
It is shown that certain multi-component Ermakov systems admit Lewis-Ray-Reid invariants. This extends the result to the two-component Ermakov system.  相似文献   
20.
A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 1017m-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 1018cm-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above1015cm-2 and the abrupt 2.5 nm/decade.  相似文献   
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