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11.
Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation 下载免费PDF全文
Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed. 相似文献
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为了实现全天候多波段远距离实时图像监控,设计了具有微光、红外和可见光融合的光学前端,对多源图像进行实时配准研究。在平行光轴的基础上,通过计算不同视场图像的成像视差,计算仿射变换需要的参数,采用双线性内插算法弥补红外在成像方面与可见光图像的差别,将红外图像的变换制作成查找表存储在图像处理器DM642中,系统通过硬件查找表可以快速实现不同图像的配准变换,实现同步视频的实时配准与融合。实验表明:该设计能够准确地实现多源图像的实时配准,系统经过图像配准、图像融合和伪彩变换处理后的时间约为24.3 ms,系统探测距离大于3 km。 相似文献
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15.
Martin van Gemmeren 《Transactions of the American Mathematical Society》1996,348(6):2413-2426
In the first part we prove an extension of the Chern-Lashof inequality for noncompact immersed manifolds with finitely many ends. For this we give a lower bound of the total absolute curvature in terms of topological invariants of the manifold. In the second part we discuss tightness properties for such immersions. Finally, we give an upper bound for the substantial codimension.
16.
O. Naselli 《Journal of Optimization Theory and Applications》1996,91(1):81-90
In this paper, we present a class of functions:f:X such that inf
xX
f(x)=
, whereX is a nonempty, finitely compact and convex set in a vector space andB
x
={xX: y aff(X){x:[x, y]X={x}. Our main tool is a recent minimax theorem by Ricceri (Ref. 1). 相似文献
17.
An analog of the minimal unitary series representations for the deformed Virasoro algebra is constructed using vertex operators of the quantum affine algebra Uq(sl2). A similar construction is proposed for the elliptic algebra Aq,p(sl2). 相似文献
18.
Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells 总被引:1,自引:0,他引:1
We have discussed the resolution of submicron photoluminescence (PL) imaging using a solid immersion lens (SIL), which collects an evanescent light field. We apply the SIL microscope to measure PL image of a strip-line-patterned GaAs quantum well structure at low temperature. An improved resolution beyond diffraction limit and high collection efficiency of PL are realized.This paper was originally presented at the 5th International Conference on NEAR FIELD OPTICS and RELATED TECHNOLOGIES (NFO-5), which was held on December 6–10, 1998 at Coganoi Bay Hotel, Shirahama, Japan, in cooperation with the Japan Society of Applied Physics and Mombusho Grant-in Aid for Scientific Research on Priority Areas “Nearfield Nano-optics” Project, sponsored by Japan Society for the Promotion of Science. 相似文献
19.
It is shown that certain multi-component Ermakov systems admit Lewis-Ray-Reid invariants. This extends the result to the two-component Ermakov system. 相似文献
20.
A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 1017m-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 1018cm-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above1015cm-2 and the abrupt 2.5 nm/decade. 相似文献