刃型位错和圆弧形刚性线夹杂的干涉效应

位错和夹杂的干涉效应对于理解材料的强化和韧化机理具有十分重要的意义。文中研究了晶体材料中刃型位错和多条共圆弧刚性线夹杂的干涉作用。利用Riemann—Schwarz反照原理和复势函数的奇性主部分析技术，得到了问题的一般解答；对于只含一条刚性线夹杂的情况，给出了复势函数的封闭形式解。由Peach-Koehler公式求出了作用在刃型位错上的位错力，并讨论了圆弧形刚性线夹杂对位错力的影响规律，发现弧形刚性线对刃型位错有很强的排斥作用。本文解答不但可作为格林函数获得任意分布位错的相应解答，而且可以用于研究刚性线夹杂和任意形状裂纹的干涉效应问题。     

Numerical solution of the problem of the mixing of the boundary layers shed from the trailing edge of a wing

During the mixing of viscous incompressible flows with different velocities, in the vicinity of a trailing edge an interaction region with a three-layer structure is formed, similar to that in the case of symmetric shedding with equal velocities. The boundary layers developing on the upper and lower sides of the airfoil form a viscous mixing layer, or vortex sheet, which separates the flows downstream of the trailing edge. The boundary value problem corresponding to the flow in the viscous sublayer in the vicinity of the trailing edge of a flat plate is solved for high Reynolds numbers using an efficient numerical method for solving the equations of asymptotic interaction theory.     

最大边连通和super-边连通超图的充分条件

设H是连通超图。若超图H的边连通度等于其最小度,则称H是最大边连通的。若超图H的每个最小边割总是由关联于某个最小度顶点的边集所构成,则称H是super-边连通的。首先给出一致线性超图是最大边连通超图的度序列条件。其次,给出一致线性超图是super-边连通超图的度条件。这些结果分别推广了Dankelmann和Volkmann（1997）以及Hellwig和Volkmann（2005）在图上的相关结论。     

图的倍图与补倍图

计算机科学数据库的关系中遇到了可归为倍图或补倍图的参数和哈密顿圈的问题．对简单图C,如果V（D（G））：V（G）∪V（G′）E（D（G））=E（C）∪E（C″）U{vivj′｜vi∈V（G）,Vj′∈V（G′）且vivj∈E（G））那么,称D（C）是C的倍图,如果V（D（G））=V（C）∪V（G′）,E（D（C））：E（C）∪E（G′）∪{vivj′}vi∈V（G）,vj′∈V（G’）and vivj∈（G））,称D（C）是G的补倍图,这里G′是G的拷贝．本文研究了D（G）和D的色数,边色数,欧拉性,哈密顿性和提出了D（G） 的边色数是D（G）的最大度等公开问题．     

Halin-图的邻强边染色

图G(V,E)的正常κ-边染色f叫做图G(V,E)的κ-邻强边染色当且仅当任意uv∈E(G)满足f[u]≠f[v],其中,f[u]={f(uw)|uw∈E(G)},称f是G的κ-临强边染色,简记为κ-ASEC.并且x′_as(G)=min{k|κ-ASEC of G}叫做G(V,E)的邻强边色数.本文研究了△(G)≥5的Halin-图的邻强边色数.     

一类优美图

设u、ν是两个固定顶点.用b条内部互不相交且长度皆为a的道路连接u、ν所得的图用P_a,b表示.KM.Kathiresan证实P_2,2m-1(r,m皆为任意正整数)是优美的,且猜想:除了(a,b)=(2r+1,4s+2)外,所有的P_a,b都是优美的.杨元生已证实P_2r+1,2m-1是优美的,并且证实了当r=1,2,3,4时的P_2r,2m也是优美的.本文证实r=5,6,7时P_{2r,2m相似文献}   

Vertex-distinguishing E-total Coloring of Complete Bipartite Graph K_(7,n) when 7≤n≤95

Let G be a simple graph. A total coloring f of G is called an E-total coloring if no two adjacent vertices of G receive the same color, and no edge of G receives the same color as one of its endpoints. For an E-total coloring f of a graph G and any vertex x of G, let C(x) denote the set of colors of vertex x and of the edges incident with x, we call C(x) the color set of x. If C(u)≠ C(v) for any two different vertices u and v of V(G), then we say that f is a vertex-distinguishing E-total coloring of G or a VDET coloring of G for short. The minimum number of colors required for a VDET coloring of G is denoted by χ_(vt)~e(G) and is called the VDET chromatic number of G. The VDET coloring of complete bipartite graph K_(7,n)(7 ≤ n ≤ 95) is discussed in this paper and the VDET chromatic number of K_(7,n)(7 ≤ n ≤ 95) has been obtained.     

Fraunhofer Diffraction Pattern by a Slit Aperture between a Knife Edge and a Metal Cylinder

The Fraunhofer diffraction pattern of an aperture formed between a knife edge and a smooth surface of a turned metal cylinder or half cylinder is different from the diffraction pattern of an ideal slit aperture. The diffraction pattern is simulated by adding the light reflected by the cylinder surface to the pattern formed by a slit, and is measured using a cylinder that has been partly cut away so that it can represent either a full or half cylinder. The theoretical and measured patterns agree well with each other.     

g-C3N4/SnS2异质结构:一类有潜力的光解水催化剂

采用第一性原理方法研究了层间耦合作用对g-C₃N₄/SnS₂异质结构的电子结构和吸光性质的影响.发现g-C₃N₄/SnS₂是一类典型的范德瓦异质结构,能有效吸收可见光,其价带顶和导带底与水的氧化还原势匹配,且由于电荷转移而导致的界面处极化场有利于光生载流子的分离.这些理论研究结果表明g-C₃N₄/SnS₂异质结构是一类非常有潜力的光解水催化材料.     

非近邻跳跃对扶手椅型石墨烯纳米带电子结构的影响

根据π电子的紧束缚模型,将电子的次近邻和第三近邻跳跃能考虑在内,得到扶手椅型石墨烯纳米带（AGRNs）能带结构的解析解.讨论了由次近邻和第三近邻电子跳跃引起的能带和能隙变化,发现次近邻和第三近邻跳跃分别对带隙产生增大和减小的影响. 比较了边界弛豫与非近邻跳跃之间的互相竞争关系. 当纳米带的宽度n为奇数时,二维石墨面的紧束缚模型中所固有的van Hove奇异性表现为AGRNs中的无色散带. 当AGRNs宽度增加时,能谱趋向于二维石墨烯时的能谱结构. 关键词： 扶手椅型石墨烯纳米带 非近邻跳跃 边界弛豫 电子结构