激光诱导Ti等离子体电子温度的实验研究

室温,常压下,利用Nd∶YAG脉冲激光器产生的波长为1 064 nm, 脉宽12 ns,能量分别180, 230和280 mJ的脉冲激光冲击Ti靶,使用中阶梯光栅光谱仪检测了三种激光能量下对应的光谱。调节延时器DG645的延迟时间,检测了延迟0～500 ns时间范围内Ti等离子体对应激光能量下的发射光谱,分析光谱,可以得到了九条不同的的TiⅠ 和TiⅡ等离子体谱线,证明在该实验条件下,Ti靶能够充分吸收能量电离且离子谱线具有不同的演化速率,利用Saha-Boltzmann法计算并分析Ti等离子体电子温度,实验结果表明：相同的延迟时间,激光能量越大,谱线相对强度越大,电子温度越高,谱线相对强度的变化量随激光能量的变化量增大而增大;在延时0～150 ns内,三种激光能量下的等离子体电子温度和谱线的相对强度都随延迟时间的增加而快速下降,其中280 mJ激光能量下的等离子体电子温度和谱线强度下降速率较快;在150～250 ns范围内,电子温度和谱线强度均随延迟时间的增加有一个缓慢的上升,180 mJ激光能量下的等离子体电子温度和谱线强度的上升速率较快。250～500 ns范围内,三种激光能量下的电子温度和谱线强度均随延迟时间的增加而缓慢下降。     

Study on the possibilities of controlling the laser output beam properties by an intracavity deformable mirror

The possibilities of controlling the laser beam properties by a deformable mirror introduced into the laser optical cavity were studied theoretically and experimentally. The experiments were performed under conditions of an industrial high power transverse flow cw CO₂ laser operating with a stable resonator of a folded configuration. A deformable bimorph mirror of a surface profile controlled by the voltage applied to the mirror electrodes is implemented to the laser system as a back cavity mirror or as a one of the inner folding mirrors. The near-and far-field characteristics of the laser beam versus the resonator configuration controlled by the changes of the focal length of the deformable mirror are discussed in the paper. The analysis reveals that the resonator with an inner deformable mirror is much more sensitive to the mirror curvature variations than the resonator in which the deformable mirror is used as a back cavity mirror. The presented results show that dynamic and controllable changes in the resonator properties result in the controlled modification and optimisation of the laser output power and spatial parameters of the laser radiation.     

Temperature dependence of photoluminescence and electroluminescence of ZnS:Mn crystals

By means of comprehensive analysis of the temperature dependences of the photoluminescence for ZnS:Mn crystals, we have observed persistent changes in the intensity, shape, and position of the maximum in the emission spectrum associated with changes in the immediate environment of the manganese luminescence centers. We have also observed inflection points on the voltage vs. brightness characteristics of the samples, the position of which depends on the frequency of the exciting voltage and the temperature. The observed dependences are explained using concepts describing the mechanisms of pre-breakdown luminescence. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 631–636, September–October, 2006.     

Interferometric monitoring of single-mode operation of a tunable injection laser

We propose a technique for rapid monitoring of single-mode operation of a tunable injection laser, based on analysis of the fine structure of the power-current characteristic obtained with self-heterodyning, using a Michelson interferometer. The technique makes it possible to determine the range for single-mode lasing and mode tuning as well as the presence of spurious optical feedback, and to estimate the coherence length. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 119–123, January–February, 2006.     

8mm波段含水量对砂土辐射特性影响研究

毫米波技术应用的基础是物体在毫米波波段的辐射特性的差异,但现阶段物体在毫米波波段的辐射特性的研究缺乏相关理论和试验验证支撑,因此进行了8mm波段砂土辐射特性和含水量相关关系的建模和仿真研究,通过菲涅尔折射定律及理想介质面波的连续性推导出了理想介质面的反射率计算公式,然后利用该公式进行了8mm波段水面辐射特性和含水量对砂土辐射特性影响的仿真,最后通过测量和计算增加砂土含水量对砂土辐射特性影响的定性试验进行仿真结果的定性验证。试验结果和仿真结果一致,砂土随着含水量的增加发射率在下降,砂土的亮温在下降,通过这一结论可以通过砂土亮温的变化定性反演出砂土含水量的变化,从而为毫米波技术在监测含水量等方面的应用提供一定的理论研究和试验验证支撑。     

低阈值852nm半导体激光器的温度特性

通过金属有机化学气相淀积(MOCVD)和半导体后工艺技术制备了852 nm半导体激光器,它在室温下的阈值电流为57.5 m A,输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明,当温度变化范围为293~328 K时,阈值电流的变化速率为0.447m A/K,特征温度T0为142.25 K,输出的光功率变化率为0.63 m W/K。通过计算求得理想因子n为2.11,激光器热阻为77.7 K/W,中心波长漂移速率是0.249 29 nm/K,实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明,该半导体器件在293~303 K的温度范围内,各特性参数能够保持相对良好的状态。器件如果工作在高温环境,需要添加控温设备以保证器件在良好状态下运行。     

A solution of the DGLAP equation for gluon at low x

We obtain a solution of the DGLAP equation for the gluon at low x first by expanding the gluon in a Taylor series and then using the method of characteristics. We test its validity by comparing it with that of Glück, Reya and Vogt. The convergence criteria of the approximation used are also discussed. We also calculate εF ₂(x,Q)²/ε In Q ² using its approximate relations with the gluon distribution at low x. The predictions are then compared with the HERA data.     

单模光纤偏振特性的测试

叙述测量单模光纤偏振特性的基本原理，介绍了单模光纤的偏振度P，位相差δ及保偏光纤的拍长Lp的测量方法。     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.     

新型金阴极及其紫外光电发射特性

采用直流磁控溅射法制备了不同厚度的金纳米薄膜,在高纯氮气气氛、800 ℃条件下快速退火,在石英基底上制备了具有表面微纳颗粒的新型金阴极。应用扫描电子显微镜对阴极的表面形貌进行表征,结果表明：阴极表面形成了均匀分布的金纳米颗粒,平均粒径随金纳米薄膜厚度的增加（5 nm至20 nm）从300 nm增大到800 nm。在190~360 nm紫外光下,对阴极的光电子发射特性进行了研究,结果表明：相对于平面阴极,新型金阴极的光电子发射效率提高了10倍以上,最高可达到平面阴极的16倍,且随颗粒粒径的减小而增大。采用三步光电发射模型对上述结果进行理论分析,表明阴极光电效率的提高主要由于阴极光电发射面积的增加和局域强电场导致的表面势垒降低。