Triboelectrification of granular insulating materials as affected by dielectric barrier discharge (DBD) treatment

The aim of this paper is to point out the influence of dielectric barrier discharge treatment on tribocharging of granular insulating materials. Particles of Polyvinyl Chloride (PVC) and Polypropylene (PP) were subjected to an AC dielectric barrier discharge (DBD) plasma treatment in ambient airprior to tribocharging in a vibratory device. The charge to mass ratio was measured for treated and untreated materials. Electrostatic separation of a mixture of granular materials (PVC and PP) to measure the effectiveness of DBD treatment was evaluated by processing treated and untreated PVC/PP granular mixtures in a free-fall electrostatic separator. The obtained results clearly indicate that DBD has the capability to influence surface charging proprieties of polymer granular materials. In case of short treatment time, typically less than 3 s, a marked increase in the charge to mass ratios was observed for both PVC (about 35%) and PP (roughly 45%). In the same way, the quantity of DBD-treated materials, recovered after electrostatic separation, was increased by about 104% and 30% for PVC and PP, respectively, as compared to untreated case. The DBD treatment time is a key factor to increase the tribo electric effect.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

Dividend optimization for jump–diffusion model with solvency constraints

Belhaj (2010) established that a barrier strategy is optimal for the dividend problem under jump–diffusion model. However, if the optimal dividend barrier level is set too low, then the bankruptcy probability may be too high to be acceptable. This paper aims to address this issue by taking the solvency constrain into consideration. Precisely, we consider a dividend payment problem with solvency constraint under a jump–diffusion model. Using stochastic control and PIDE, we derive the optimal dividend strategy of the problem.     

Influence of pores on the surface microcompression mechanical response of thermal barrier coatings fabricated by atmospheric plasma spray—Finite element simulation

Surface microcompression is a very important technique to characterize the mechanical properties of film and coating systems. In this paper, surface microcompression simulation for La₂Zr₂O₇ (LZ) thermal barrier coatings (TBCs) was implemented by finite element method, especially, the influence of pores on the surface microcompression mechanical response of the thermal barrier coatings fabricated by atmospheric plasma spray (APS) was focused on. The simulation results indicate that the pores not only affect the stress distribution beneath the contact area between the indenter and coating surface, but also affect the shape of the force-displacement curve and the plastic deformation behavior of TBCs. The micromechanism was discussed in detail in this study. At the same time, by using the surface microcompression technique, a new direction or method was proposed to characterize the pore content of the coating quantitatively.     

介质阻挡放电中的能量转换过程研究

研究了介质阻挡放电过程中的电流强度、电场强度以及电荷分布的演变规律，并对能量转换性质进行了分析.研究结果表明，在一个放电脉冲过程中，外加驱动电源所作的功、电场能量的增量均与起始时刻的壁电荷密度有关，而气体中放电电流所作的功即沉积于气体中的能量与起始时刻的壁电荷密度、放电电流的具体波形无关. 关键词： 介质阻挡放电 壁电荷 动力学过程 能量转换     

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.     

Concentric-ring structures in an atmospheric pressure helium dielectric barrier discharge

This paper performs a numerical simulation of concentric-ring discharge structures within the scope of a two-dimensional diffusion--drift model at atmospheric pressure between two parallel circular electrodes covered with thin dielectric layers. With a relative high frequency the discharge structures present different appearances of ring structures within different radii in time due to the evolvement of the filaments. The spontaneous electron density distributions help understanding the formation and development of self-organized discharge structures. During a cycle the electron avalanches are triggered by the electric field strengthened by the feeding voltage and the residual charged particles on the barrier surface deposited in the previous discharges. The accumulation of charges is shown to play a dominant role in the generation and annihilation of the discharge structures. Besides, the rings split and unify to bring and annihilate rings which form a new discharge structure.     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.