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31.
A polymer-stabilised blue-phase liquid crystal display (PSBP-LCD) with double-side in-plane switching (DS-IPS) electrode structure is proposed. This structure shows the transflective characteristics because the bottom electrodes are made by aluminium material. For transflective displays, it exhibits a well-matched voltage-dependent transmission and reflection curves through designing the width and gap of the top electrodes. When a bias voltage is applied on the top electrodes, it exhibits as a good viewing angle controllable display. 相似文献
32.
In order to compensate for light leakage in the oblique viewing directions of the dark state of the horizontal-switching mode such as the in-plane switching and fringe field switching modes. The viewing angle performance of the horizontal-switching mode with an compensation film has been evaluated on a case by case basis according to the retardation values of the films. Consequently, we found that a much better dark state can be achieved by using an optimised compensation film. 相似文献
33.
合理构筑了3个具有固态自旋交叉特性的亚铁四面体笼状化合物1~3。单晶X射线衍射分析证实了化合物是由6个咪唑席夫碱配体和4个亚铁离子组装形成的边导向封顶胶囊结构。金属中心占据四面体的顶点,而配体组成了四面体的边。这些笼状化合物的内部空腔被咪唑基团环绕,而外部则被取代苯环包围。一个阴离子客体被限域在笼状化合物空腔内,并与笼状化合物主体产生较强的相互作用。当在笼状化合物的乙腈溶液中加入卤素离子(Cl-和Br-)时,溶液的颜色和MLCT峰强度会发生明显变化,表明亚铁四面体笼状化合物的自旋状态由低自旋向髙自旋发生了转换。 相似文献
34.
Dual switchable six-ring bent-core liquid crystals with azo linkages exhibiting B1 and B2 mesophases
A new series of asymmetric bent-core compounds were synthesised using azo linkages with equal as well as unequal terminal alkyl chains and their photo and electrical switching properties investigated. The mesomorphic properties were characterised using polarised optical microscopy, X-ray diffraction and differential scanning calorimetry. The lower homologues of the series of compounds show a B1 phase whereas higher homologues exhibit a B2 phase. The B2 phase shows an anticlinic-antiferroelectric switching behaviour during electro-optic measurements. The photo-switching properties of the azobenzene containing bent-core molecules were investigated using ultraviolet-visible spectroscopy. The trans to cis photo isomerisation was observed at 25 s whereas reverse processes took 14 h in chloroform. 相似文献
35.
C. J. Little O. Stahel K. Hales 《International journal of environmental analytical chemistry》2013,93(1-2):11-23
Abstract Our objective in using column switching is primarily to achieve the desired separation in the minimum analysis time. Complimentary to this aim is the need for sample and column cleanup followed by column re-equilibration. Finally, all operations should be capable of automation. Fundamental to column switching methodology is the concept of Zone cutting, where part of the chromatogram is transferred to another column. This forms the basis of sample cleanup and is a very versatile and powerful method. Multiple zone cutting is also possible to further increase the scope of cleanup or to minimise analysis time. Zone cutting is also complimentary to the techniques of trace enrichment and recycling. Examples will be given involving the use of these techniques in the analysis of complex matrices such as urine, plant extracts, wine and serum. The latter will be used to propose a novel approach to the quantitative analysis of anti-convulsants in serum using hexobarbital as internal standard. 相似文献
36.
Adsorption and desorption of ions at interface between liquid crystal and alignment layer in liquid crystal displays play a crucial role in residual direct current voltage associated with image sticking. In this article, the dependency of such adsorption and desorption of ions on resistivity of alignment layer and sign of liquid crystal dielectric anisotropy in the fringe-field liquid crystal cell has been investigated. Our studies show that the time constant of ions during adsorption and desorption depends upon resistivity and dielectric constant of liquid crystal and alignment layer, and most strongly influenced by the resistivity of alignment layer such that the one with lower resistivity in two orders shows much faster adsorption and desorption at the interface than that of the one with higher resistivity. 相似文献
37.
We propose a method for fast switching of vertically aligned (VA) negative liquid crystals (LCs) by hiding the relaxation process of LCs. During the turn-off process, a strong in-plane electric field is applied for a short duration of time instead of relying solely on the slow relaxation of LCs. The LC molecules are rotated to the transmission axis of one of the polarisers by the applied in-plane electric field, resulting in turn-off switching that is 5.8 times faster than that of a conventional VA cell. By applying an overdriving scheme, we experimentally obtained a total response time of 3.3 ms. 相似文献
38.
Summary To match the need of high efficiency capillary column (plate number N2, Plate height H2 and carrier gas linear velocity U2), a new high efficiency packed column (N1, H1 and U1) at high carrier gas velocity with small capacity factor has been developed in the light of theoretical discussion of factors
effecting the column efficiency utilization ratio. 相似文献
39.
40.
ZHAO Jinjin LI Wei WANG Xuechen WEI Xiao ZHU Huiwen QU Wenshan MEN Dandan GAO Zhixiang WEI Bin GAO Hanfei WU Yuchen 《高等学校化学研究》2023,39(1):121-126
Organic memristors with low power consumption, fast write/erasure speed, and complementary metal-oxide-semiconductor(CMOS) compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years. In this paper, organic resistive switching memory(ORSM) based on (Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA) and polymer poly(N-vinylcarbazole)(PVK) composite film was prepared by spin-coating method. Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated. The ORSM based on PVK:40%(mass fraction) NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff) of 24.1, endurance of 68 times and retention time of 104 s, a “SET” voltage(Vset) of -0.55 V and a “RESET” voltage(Vreset) of 2.35 V. The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk. The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias, which caused the transforming of the conductive way of charges, that is the resistive behaviors in the macroscopic. This study provides a promising platform for the fabrication of ORSM with high performance. 相似文献