Simple electro-optic technique to generate temporally flat-top laser pulses

A simple technique is presented to generate temporally flat-top shaped laser pulses using electro-optic modulator (Pockels cell). It involves splitting of input laser pulse into two halves of equal intensity and then stacking together with appropriate optical delay to get a temporally flat-top laser pulse. It also allows generation of other pulse shapes by varying the relative intensity, delay, and phase between two halves of the input laser pulse. Temporally flat-top laser pulses of duration ~ 9 ns have been generated using ~ 7 ns duration incident laser pulses from a flash lamp pumped Q-switched Nd:glass laser oscillator. The rise and fall-time of the shaped pulse is limited by speed of electro-optic switch (Pockels cell), which is ~ 2 ns in the present case.     

All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Electromechanical cracking in ferroelectrics driven by large scale domain switching

Experimental results indicate three regimes for cracking in a ferroelectric double cantilever beam (DCB) under combined electromechanical loading. In the loading, the maximum amplitude of the applied electric field reaches almost twice the coercive field of ferroelectrics. Thus, the model of small scale domain switching is not applicable any more, which is dictated only by the singular term of the crack tip field. In the DCB test, a large or global scale domain switching takes place instead, which is driven...     

Composition dependence of unipolar resistance switching in TaOx thin films

Amorphous TaO_x thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaO_x/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta₂O₅ in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaO_x film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaO_x films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

不同开关频率下电压控制升压变换器中的Hopf分岔分析

由于电压控制升压变换器的传统平均模型中没有包含开关频率,从而无法分析开关频率的大小对电压控制升压变换器中Hopf分岔的影响. 通过建立电压控制升压变换器的含有开关频率的改进平均模型,分析了开关频率对电压控制升压变换器中Hopf分岔的影响,并设计硬件电路,给出电路试验结果. 研究表明:采用电压控制升压变换器的改进平均模型,可以有效地分析不同开关频率对电压控制升压变换器中Hopf分岔的影响; 随着开关频率的减小,电压控制升压变换器更易于发生Hopf分岔. 关键词： 改进平均模型 电压控制升压变换器 开关频率     

Optical switching and logic gates with hybrid plasmonic-photonic crystal nanobeam cavities

We propose a hybrid resonance architecture in which a plasmonic element is coupled to a silicon-on-insulator photonic crystal nanobeam cavity operating at telecom wavelengths. It benefits from the combined characteristics of the photonic cavity and the plasmonic element, and exploits the unique properties of Fano resonances resulting from interactions between the continuum and the localized cavity states. As confirmed through 3D time-domain simulations, a strong cavity mode damping by the plasmonic element offers mechanisms of controlling a probe signal propagating in the nanobeam. It makes possible to create optical switching devices and logic gates relying on any optical nonlinear effect.     

Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

In this Letter, bilayered Cu₂O/CuO thin films were grown on Nb doped SrTiO₃ (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current-voltage characteristics of Pt/Cu₂O/CuO/Nb:STO devices show reproducible and pronounced current-voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current-voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage.     

低功耗非线性光纤光栅全光开关

全光开关是未来全光通信和光计算机的关键器件.已经研究过的全光开关的种类很多,其中光纤光栅全光开关最容易与光纤系统匹配.文章首先陈述两种基于普通石英光纤的单光栅全光开关,即光纤布拉格光栅(FBG)全光开关和长周期光纤光栅(LPFG)全光开关,这两种低非线性的光开关要求千瓦量级的高开关功率,故不宜应用;然后重点介绍两种高非线性的光纤光栅全光开关,它们分别由单个高非线性FBG和用高非线性光纤连接的LPFG对构成.文章所介绍的非线性光纤材料是以掺稀土石英光纤为例.这两种高非线性的光纤光栅全光开关具有毫瓦量级的低开关功率,有可能获得实际应用.     

Portfolio optimization in a regime-switching market with derivatives

We consider the optimal asset allocation problem in a continuous-time regime-switching market. The problem is to maximize the expected utility of the terminal wealth of a portfolio that contains an option, an underlying stock and a risk-free bond. The difficulty that arises in our setting is finding a way to represent the return of the option by the returns of the stock and the risk-free bond in an incomplete regime-switching market. To overcome this difficulty, we introduce a functional operator to generate a sequence of value functions, and then show that the optimal value function is the limit of this sequence. The explicit form of each function in the sequence can be obtained by solving an auxiliary portfolio optimization problem in a single-regime market. And then the original optimal value function can be approximated by taking the limit. Additionally, we can also show that the optimal value function is a solution to a dynamic programming equation, which leads to the explicit forms for the optimal value function and the optimal portfolio process. Furthermore, we demonstrate that, as long as the current state of the Markov chain is given, it is still optimal for an investor in a multiple-regime market to simply allocate his/her wealth in the same way as in a single-regime market.