压印光刻中的两步对正技术

压印光刻中套刻需要粗、精两级对正.实验采用一对斜纹结构光栅作为对正标记.利用物镜组观察光栅标记图像的边界特征进行粗对正,其准确度在精对正信号的捕捉范围内;利用光电接收器件阵列组合接收光栅莫尔信号,在莫尔信号的线区进行精对正.由于线性区的斜率大, 精对正过程中得到相应x,y方向的对正误差信号灵敏度高,利用高灵敏度对正误差信号作为控制系统的驱动信号,对承片台进行驱动定位,实现精对正.最终使X,Y方向上的重复对正准确度分别达到了± 21 nm(± 3σ)和±24 nm(± 3σ).     

Orbital angular momentum density and spiral spectra of Lorentz–Gauss vortex beams passing through a single slit

Based on the Hermite–Gaussian expansion of the Lorentz distribution and the complex Gaussian expansion of the aperture function, an analytical expression of the Lorentz–Gauss vortex beam with one topological charge passing through a single slit is derived. By using the obtained analytical expressions, the properties of the Lorentz–Gauss vortex beam passing through a single slit are numerically demonstrated. According to the intensity distribution or the phase distribution of the Lorentz–Gauss vortex beam, one can judge whether the topological charge is positive or negative. The effects of the topological charge and three beam parameters on the orbital angular momentum density as well as the spiral spectra are systematically investigated respectively. The optimal choice for measuring the topological charge of the diffracted Lorentz–Gauss vortex beam is to make the single slit width wider than the waist of the Gaussian part.     

Topological transport in Dirac electronic systems:A concise review

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological phases. In this topical review, transport properties of topological insulator(Bi2Se3), topological Dirac semimetal(Cd3As2), and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems,including topological edge transport, topological valley transport, and topological Weyl semimetals, are provided.     

Topological Aspects of Liquid Crystals

Using -mapping method and topological current theory, the properties and behaviors of disclination points in three-dimensional liquid crystals are studied. By introducing the strength density and the topological current of many disclination points, the total disclination strength is topologically quantized by the Hopf indices and Brouwer degrees at the singularities of the general director field when the Jacobian determinant of the general director field does not vanish. When the Jacobian determinant vanishes, the origin, annihilation, and bifurcation of disclination points are detailed in the neighborhoods of the limit point and bifurcation point, respectively. The branch solutions at the limit point and the different directions of all branch curves at the first- and second-order degenerated points are calculated. It is pointed out that a disclination point with a higher strength is unstable and will evolve to the lower strength state through the bifurcation process. An original disclination point can split into at most four disclination points at one time.     

Entanglement complexity of lattice ribbons

We consider a discrete ribbon model for double-stranded polymers where the ribbon is constrained to lie in a three-dimensional lattice. The ribbon can be open or closed, and closed ribbons can be orientable or nonorientable. We prove some results about the asymptotic behavior of the numbers of ribbons withn plaquettes, and a theorem about the frequency of occurrence of certain patterns in these ribbons. We use this to derive results about the frequency of knots in closed ribbons, the linking of the boundary curves of orientable closed ribbons, and the twist and writhe of ribbons. We show that the centerline and boundary of a closed ribbon are both almost surely knotted in the infinite-n limit. For an orientable ribbon, the expectation of the absolute value of the linking number of the two boundary curves increases at least as fast as n, and similar results hold for the twist and writhe.     

拓扑缺陷的不同分布对单壁碳纳米管电学性能的影响

在紧束缚近似基础上,利用扩展的Su-Schriffer-Heeger(SSH)模型,在实空间研究了在完整的"zigzag"碳纳米管中分别引入5/7,5/6/7,5/6/6/7拓扑缺陷所构成的(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)三种异质结的电学性能.通过研究表明:这些拓扑缺陷不仅改变碳管的直径,而且支配费米能级附近的电学行为.并计算了(9,0)-(8,0),(9,0)-(7,0)和(9,0)-(6,0)系统的电子态密度,对这3种异质结的能带结构和电子态密度进行了比较.结果表明:五边形和七边形在碳管中分布的不同对碳管电学性能的影响明显不同.因此,可以研制出基于这些异质结的不同的电子器件基元.     

Operator Semigroup Compactifications

A weakly continuous, equicontinuous representation of a semitopological semigroup on a locally convex topological vector space gives rise to a family of operator semigroup compactifications of , one for each invariant subspace of . We consider those invariant subspaces which are maximal with respect to the associated compactification possessing a given property of semigroup compactifications and show that under suitable hypotheses this maximality is preserved under the formation of projective limits, strict inductive limits and tensor products.

     

赋层拓扑分子格及其紧性

拓扑分子格本身没有层次结构，为其构造某种层次成为很重要的问题。本文的构思是赋于分子格上的拓扑一种层次，从而使拓扑分子格具有丰富的层次性，其次讨论了保层次序同态与赋层积拓扑分子格，在此基础上建立了较理想的拓扑分子格的紧性。